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65results about "Arsenic organic compounds" patented technology

Thermally stable volatile film precursors

A precursor for the deposition of a thin film by atomic layer deposition is provided. The compound has the formula MxLy where M is a metal and L is an amidrazone-derived ligand or an amidate-derived ligand. A process of forming a thin film using the precursors is also provided.
Owner:WAYNE STATE UNIV

Antimony and germanium complexes useful for cvd/ald of metal thin films

Antimony, germanium and tellurium precursors useful for CVD / ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
Owner:ENTEGRIS INC

Bicyclic guanidinates and bridging diamides as cvd/ald precursors

Precursors for use in depositing metal-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for depositing Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Owner:ADVANCED TECH MATERIALS INC

Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same

The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
Owner:MICRON TECH INC

Processes for the production of organometallic compounds

This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
Owner:PRAXAIR TECH INC

Polymerization of olefins

Olefins, such as ethylene, are polymerized using as a polymerization catalyst a complex of a selected transition metal with a monoanionic ligand that has at least three atoms that may coordinate to the transition metal. Also disclosed are the above selected transition metal complexes, and intermediates thereto.
Owner:EI DU PONT DE NEMOURS & CO

A Substantially Cell Membrane Impermeable Compound And Use Thereof

The present invention relates to a compound according to Formula (I): A-(L-Y)p, wherein A comprises at least one substantially cell-membrane impermeable pendant group; L comprises any suitable linker and / or spacer group; Y comprises at least one arsenoxide or arsenoxide equivalent; p is an integer from 1 to 10; and the sum total of carbon atoms in A and L together, is greater than 6.
Owner:NEWSOUTH INNOVATIONS PTY LTD

Organometallic complex, luminescent solid, organic EL element and organic EL display

An object of the invention is to provide an organic EL element which uses an organometallic complex emitting light by phosphorescence and which represents excellent luminous efficiency, etc; or the like. The organic EL element of the invention includes the organometallic complex, where the organometallic complex includes a metal atom, and a tridentate ligand, where the tridentate ligand binds to the metal atom tridentately via two nitrogen atoms and a carbon atom, and the carbon atom is located between the two nitrogen atoms, and where the tridentate ligand has two azomethine bonds (—C═N—), and each nitrogen atom in the azomethine bonds coordinates to the metal atom. Preferably, in one aspect, the organometallic complex includes a monodentate ligand which binds to the metal atom monodentately, and in another aspect, the metal atom is Pt.
Owner:UDC IRELAND

Metal precursors for semiconductor applications

Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE

A Substantially Cell Membrane Impermeable Compound And Use Thereof

The present invention relates to a compound according to Formula (I): A-(L-Y)p, wherein A comprises at least one substantially cell-membrane impermeable pendant group; L comprises any suitable linker and / or spacer group; Y comprises at least one arsenoxide or arsenoxide equivalent; p is an integer from 1 to 10; and the sum total of carbon atoms in A and L together, is greater than 6.
Owner:NEWSOUTH INNOVATIONS PTY LTD

Compounds for Imaging and Therapy

A metal complex of formula (III) wherein: M is a transition metal and A1, A2, X, X′, Y, L1′, R1′ and R2′ are as defined herein, is useful in medical imaging and therapy.
Owner:OXFORD UNIV INNOVATION LTD

Polymerization of olefinic compounds

Certain complexes containing ligands having a phosphino group, amino group or an imino group, and a second functional group such as amide, ester or ketone, when complexed to transition metals, catalyze the (co)polymerization of olefinic compounds such as ethylene, alpha-olefins and / or acrylates. A newly recognized class of ligands for making copolymer containing polar monomers using late transition metal complexes is described.
Owner:EI DU PONT DE NEMOURS & CO

Precursors for Atomic Layer Deposition

Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, α-imino enolate compounds and α-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.
Owner:WAYNE STATE UNIV

Flame retardant and inorganic/organic composite flame-retardant composition

A flame retardant which comprises an inorganic hydroxide and a carbodiimide-group-containing organic layer chemically bonded to the surface of the inorganic hydroxide. Examples of the carbodiimide-group-containing organic layer include a layer comprising a carbodiimide-group-containing compound represented by either of the following formulae. Due to the constitution, the flame retardant can be highly dispersed in a resin even when added in a high proportion and can give a molding inhibited from deteriorating in electrical properties, mechanical properties, etc.(X1)m-Z-[A-(R1—N═C═N)n—R1—NCO]1  (1)(X1)m-Z-[A-(R1—N═C═N)n—R1-A-Z-(X2)3])3  (2)[R1 represents a residue of an isocyanate compound; X1 and X2 each independently represents hydrogen, halogeno, etc.; Z's each independently represents silicon or titanium; A represents an organic group having a valence of 2 or higher containing a bond derived from an isocyanate group; m and l each is an integer of 1-3, provided that m+1=4; and n is an integer of 1-100.]
Owner:NISSHINBO IND INC

Cobalt nitride layers for copper interconnects and methods for forming them

An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE

Process for production of monosulfonium salts, cationic polymerization initiators, curable compositions, and products of curing

A monosulfonium salt in which very little unreacted raw material remains, which has a purity of at least 96%, and which has one sulfonio group in its molecule is manufactured without a refining step. After (a) an aryl compound, (b) a sulfoxide compound, (c) a dehydrating agent, and (d) a BF4, PF6, AsF6, or SbF6 salt of an alkali metal or an alkaline earth metal are introduced into a reaction system, (e) an inorganic acid is added, so that the aryl compound (a) and the sulfoxide compound (b) are subjected to dehydration condensation.
Owner:SAN APRO
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