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Metal-containing compound, its production method, metal-containing thin film, and its formation method
ActiveUS20100105936A1Appropriate thermal stabilityAppropriate volatilityGroup 3/13 organic compounds without C-metal linkagesGroup 4/14 organic compounds without C-metal linkagesLithiumHydrogen
Owner:TOSOH CORP +1
Thermally stable volatile film precursors
ActiveUS20120058270A1Iron group organic compounds without C-metal linkagesCopper organic compoundsAtomic layer depositionPhotochemistry
A precursor for the deposition of a thin film by atomic layer deposition is provided. The compound has the formula MxLy where M is a metal and L is an amidrazone-derived ligand or an amidate-derived ligand. A process of forming a thin film using the precursors is also provided.
Owner:WAYNE STATE UNIV
Antimony and germanium complexes useful for cvd/ald of metal thin films
ActiveUS20090305458A1Group 4/14 organic compounds without C-metal linkagesGermanium organic compoundsPhase-change memoryTe element
Antimony, germanium and tellurium precursors useful for CVD / ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
Owner:ENTEGRIS INC
Antimony and germanium complexes useful for CVD/ALD of metal thin films
ActiveUS7838329B2Group 4/14 organic compounds without C-metal linkagesGermanium organic compoundsPhase-change memoryTe element
Antimony, germanium and tellurium precursors useful for CVD / ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
Owner:ENTEGRIS INC
Bicyclic guanidinates and bridging diamides as cvd/ald precursors
InactiveUS20090275164A1Group 8/9/10/18 element organic compoundsSemiconductor/solid-state device manufacturingPhase-change memoryWafering
Precursors for use in depositing metal-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for depositing Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Owner:ADVANCED TECH MATERIALS INC
Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
InactiveUS20060292303A1Increase vapor pressureLow melting pointSemiconductor/solid-state device manufacturingCobalt organic compoundsGas phaseΒ diketiminate
The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
Owner:MICRON TECH INC
Organometallic complex, luminescent solid, organic EL element and organic EL display
InactiveUS7276617B2Easy to synthesizeReadily availableDischarge tube luminescnet screensLamp detailsNitrogenMetal
An object of the invention is to provide an organic EL element which uses an organometallic complex emitting light by phosphorescence and which represents excellent luminous efficiency, etc; or the like. The organic EL element of the invention includes the organometallic complex, where the organometallic complex includes a metal atom, and a tridentate ligand, where the tridentate ligand binds to the metal atom tridentately via two nitrogen atoms and a carbon atom, and the carbon atom is located between the two nitrogen atoms, and where the tridentate ligand has two azomethine bonds (—C═N—), and each nitrogen atom in the azomethine bonds coordinates to the metal atom. Preferably, in one aspect, the organometallic complex includes a monodentate ligand which binds to the metal atom monodentately, and in another aspect, the metal atom is Pt.
Owner:UDC IRELAND
Polymerization of olefins
InactiveUS6531424B2Isocyanic acid derivatives preparationOrganic compound preparationAlkenePolymerization catalysts
Owner:EI DU PONT DE NEMOURS & CO
Polymerization of olefinic compounds
InactiveUS6710007B2Group 4/14 element organic compoundsOrganic-compounds/hydrides/coordination-complexes catalystsKetoneAlpha-olefin
Certain complexes containing ligands having a phosphino group, amino group or an imino group, and a second functional group such as amide, ester or ketone, when complexed to transition metals, catalyze the (co)polymerization of olefinic compounds such as ethylene, alpha-olefins and / or acrylates. A newly recognized class of ligands for making copolymer containing polar monomers using late transition metal complexes is described.
Owner:EI DU PONT DE NEMOURS & CO
Processes for the production of organometallic compounds
ActiveUS20060177577A1Improve propertiesDesired morphologyRuthenium organic compoundsIron organic compoundsRuthenium CompoundsCombinatorial chemistry
This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
Owner:PRAXAIR TECH INC
Polymerization of olefins
InactiveUS20020107345A1Isocyanic acid derivatives preparationOrganic compound preparationPolymerization catalystsAlkene
Olefins, such as ethylene, are polymerized using as a polymerization catalyst a complex of a selected transition metal with a monoanionic ligand that has at least three atoms that may coordinate to the transition metal. Also disclosed are the above selected transition metal complexes, and intermediates thereto.
Owner:EI DU PONT DE NEMOURS & CO
Sulfoniun salts, methods for their preparation and use thereof as phtoinitiators for radiation curable systems
InactiveUS20040242901A1Group 4/14 element organic compoundsGroup 1/11 element organic compoundsCombinatorial chemistrySulfonium
Owner:LAMBERTI SPA
Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
InactiveUS7439338B2Increase vapor pressureLow melting pointCobalt organic compoundsSemiconductor/solid-state device manufacturingΒ diketiminateGas phase
The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
Owner:MICRON TECH INC
A Substantially Cell Membrane Impermeable Compound And Use Thereof
The present invention relates to a compound according to Formula (I): A-(L-Y)p, wherein A comprises at least one substantially cell-membrane impermeable pendant group; L comprises any suitable linker and / or spacer group; Y comprises at least one arsenoxide or arsenoxide equivalent; p is an integer from 1 to 10; and the sum total of carbon atoms in A and L together, is greater than 6.
Owner:NEWSOUTH INNOVATIONS PTY LTD
Sulfoniun salts, methods for their preparation and use thereof as photoinitiators for radiation curable systems
InactiveUS7230121B2Group 4/14 element organic compoundsGroup 1/11 element organic compoundsPolymer scienceSulfonium
Owner:LAMBERTI SPA
Organometallic complex, luminescent solid, organic EL element and organic EL display
InactiveUS20060243966A1Improve luminous efficiencySuitable for useDischarge tube luminescnet screensLamp detailsNitrogenMetal
An object of the invention is to provide an organic EL element which uses an organometallic complex emitting light by phosphorescence and which represents excellent luminous efficiency, etc; or the like. The organic EL element of the invention includes the organometallic complex, where the organometallic complex includes a metal atom, and a tridentate ligand, where the tridentate ligand binds to the metal atom tridentately via two nitrogen atoms and a carbon atom, and the carbon atom is located between the two nitrogen atoms, and where the tridentate ligand has two azomethine bonds (—C═N—), and each nitrogen atom in the azomethine bonds coordinates to the metal atom. Preferably, in one aspect, the organometallic complex includes a monodentate ligand which binds to the metal atom monodentately, and in another aspect, the metal atom is Pt.
Owner:UDC IRELAND
Amorphous Ge/Te deposition process
ActiveUS8093140B2Germanium organic compoundsSemiconductor/solid-state device manufacturingPhase-change memoryTe element
Owner:ENTEGRIS INC
Process for the preparation of cephalosporin antibiotic
InactiveUS20060058281A1Easy to condenseImpurity formation is highOrganic active ingredientsArsenic organic compoundsCephalosporin AntibioticOrganic chemistry
An improved one-pot process for the preparation of Ceftiofur of the formula (I) or its salt, without isolating intermediate compound.
Owner:ORCHID CHEM & PHARM LTD
Novel compound and use thereof
InactiveUS20110234089A1Sufficient light-emitting propertyIndium organic compoundsDischarge tube luminescnet screensDopantCombinatorial chemistry
A compound according to the present invention is represented by the general formula (1). This makes it possible to provide (i) a novel compound that exhibits a practically sufficient light-emitting property not only in a case where the novel compound is used as a luminescent dopant, but also in a case where the novel compound is used solely, and (ii) use of the novel compound.
Owner:RIKEN
Metal precursors for semiconductor applications
InactiveUS7951711B2Improve thermal stabilitySilicon organic compoundsGroup 1/11 element organic compoundsCombined useCopper
Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
Process for the preparation of cephalosporin antibiotic
InactiveUS7345169B2Easy to condenseOrganic active ingredientsArsenic organic compoundsCephalosporin AntibioticPhotochemistry
An improved one-pot process for the preparation of Ceftiofur of the formula (I) or its salt, without isolating intermediate compound
Owner:ORCHID CHEM & PHARM LTD
A Substantially Cell Membrane Impermeable Compound And Use Thereof
The present invention relates to a compound according to Formula (I): A-(L-Y)p, wherein A comprises at least one substantially cell-membrane impermeable pendant group; L comprises any suitable linker and / or spacer group; Y comprises at least one arsenoxide or arsenoxide equivalent; p is an integer from 1 to 10; and the sum total of carbon atoms in A and L together, is greater than 6.
Owner:NEWSOUTH INNOVATIONS PTY LTD
Compounds for Imaging and Therapy
ActiveUS20110098353A1Precise positioningBiocideGeneral/multifunctional contrast agentsMedical imagingMetal
A metal complex of formula (III) wherein: M is a transition metal and A1, A2, X, X′, Y, L1′, R1′ and R2′ are as defined herein, is useful in medical imaging and therapy.
Owner:OXFORD UNIV INNOVATION LTD
Polymerization of olefinic compounds
InactiveUS20030125485A1Group 4/14 element organic compoundsOrganic-compounds/hydrides/coordination-complexes catalystsKetoneAlpha-olefin
Certain complexes containing ligands having a phosphino group, amino group or an imino group, and a second functional group such as amide, ester or ketone, when complexed to transition metals, catalyze the (co)polymerization of olefinic compounds such as ethylene, alpha-olefins and / or acrylates. A newly recognized class of ligands for making copolymer containing polar monomers using late transition metal complexes is described.
Owner:EI DU PONT DE NEMOURS & CO
Precursors for Atomic Layer Deposition
ActiveUS20150159273A1Oxide/hydroxide preparationOrganic compound preparationKetoneChemical vapor deposition
Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, α-imino enolate compounds and α-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.
Owner:WAYNE STATE UNIV
Flame retardant and inorganic/organic composite flame-retardant composition
InactiveUS20100160512A1Improve suppression propertiesGlass/slag layered productsWood layered productsChemical LinkageHydrogen
A flame retardant which comprises an inorganic hydroxide and a carbodiimide-group-containing organic layer chemically bonded to the surface of the inorganic hydroxide. Examples of the carbodiimide-group-containing organic layer include a layer comprising a carbodiimide-group-containing compound represented by either of the following formulae. Due to the constitution, the flame retardant can be highly dispersed in a resin even when added in a high proportion and can give a molding inhibited from deteriorating in electrical properties, mechanical properties, etc.(X1)m-Z-[A-(R1—N═C═N)n—R1—NCO]1 (1)(X1)m-Z-[A-(R1—N═C═N)n—R1-A-Z-(X2)3])3 (2)[R1 represents a residue of an isocyanate compound; X1 and X2 each independently represents hydrogen, halogeno, etc.; Z's each independently represents silicon or titanium; A represents an organic group having a valence of 2 or higher containing a bond derived from an isocyanate group; m and l each is an integer of 1-3, provided that m+1=4; and n is an integer of 1-100.]
Owner:NISSHINBO IND INC
Cobalt nitride layers for copper interconnects and methods for forming them
ActiveUS7973189B2Inhibited DiffusionReduce surface roughnessSemiconductor/solid-state device detailsVacuum evaporation coatingCopper conductorCopper interconnect
An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE
Synthetic catalytic free radical scavengers useful as antioxidants for prevention and therapy of disease
InactiveUS7582786B2Potent antioxidant and/or free radical scavenging propertiesReduce harmBiocideAzomethine dyesPeroxidaseSuperoxide
The invention provides antioxidant salen-metal complexes, compositions of such antioxidant salen-metal complexes having superoxide activity, catalase activity, and / or peroxidase activity, compositions of salen-metal complexes in a form suitable for pharmaceutical administration to treat or prevent a disease associated with cell or tissue damage produced by free radicals such as superoxide, and cosmetic and free radical quenching formulations of salen metal compounds.
Owner:EUKARION
Process for production of monosulfonium salts, cationic polymerization initiators, curable compositions, and products of curing
InactiveUS20060247401A1High purityHigh yieldOrganic compound preparationAntimony organic compoundsArylAlkaline earth metal
A monosulfonium salt in which very little unreacted raw material remains, which has a purity of at least 96%, and which has one sulfonio group in its molecule is manufactured without a refining step. After (a) an aryl compound, (b) a sulfoxide compound, (c) a dehydrating agent, and (d) a BF4, PF6, AsF6, or SbF6 salt of an alkali metal or an alkaline earth metal are introduced into a reaction system, (e) an inorganic acid is added, so that the aryl compound (a) and the sulfoxide compound (b) are subjected to dehydration condensation.
Owner:SAN APRO
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