Method for metallizing surface of microwave dielectric ceramic

A technology of microwave dielectric ceramics and surface metals, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve the problems of poor adhesion and difficulty in large-scale industrialization, and achieve strong adhesion and sputtering Fast film forming speed and good solderability

Inactive Publication Date: 2017-05-31
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Japan's Murata Manufacturing Co., Ltd. proposed a metallization technology (U.S. Patent 6,016,091) using magnetron sputtering technology to deposit a single-layer copper film on the surface of microwave

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) After finely grinding the surface of microwave dielectric ceramics with a size of 30mm×30mm×15mm and a dielectric constant between 2 and 100 with 1000-mesh sandpaper, put them into acetone solution, ethanol solution, and deionized water for ultrasonic cleaning for 5 ~10min, dry at 110°C for 30min. The microwave dielectric ceramics that have undergone surface fine grinding, ultrasonic cleaning, and drying are placed on a rack through self-made fixtures and sent to the magnetron sputtering equipment. The sputtering source adopts a large cylindrical magnetron sputtering target, and the sputtering target is long 1180mm, outer diameter 72mm, inner diameter 54mm, vacuumize to make the vacuum of the cavity reach 5×10 -3 Above Pa, feed oxygen to make the pressure reach about 30Pa, turn on the radio frequency power supply of 90W, generate plasma, clean for three minutes, turn off the radio frequency power supply, close the oxygen inflation valve, and restore the vacuum degre...

Embodiment 2

[0032] (1) After finely grinding the surface of microwave dielectric ceramics with a size of 30mm×30mm×15mm and a dielectric constant between 2 and 100 with 1000-mesh sandpaper, put them into acetone solution, ethanol solution, and deionized water for ultrasonic cleaning for 5 ~10min, dry at 110°C for 30min. The microwave dielectric ceramics that have undergone surface fine grinding, ultrasonic cleaning, and drying are placed on a rack through self-made fixtures and sent to the magnetron sputtering equipment. The sputtering source adopts a large cylindrical magnetron sputtering target, and the sputtering target is long 1180mm, outer diameter 72mm, inner diameter 54mm, vacuumize to make the vacuum of the cavity reach 5×10 -3 Above Pa, feed oxygen to make the pressure reach about 30Pa, turn on the radio frequency power supply of 90W, generate plasma, clean for three minutes, turn off the radio frequency power supply, close the oxygen inflation valve, and restore the vacuum degre...

Embodiment 3

[0037] (1) Microwave dielectric ceramics with a specification of 30mm×30mm×15mm and a dielectric constant between 2 and 100 are finely polished on the surface with 1000-mesh sandpaper, and then ultrasonically cleaned in acetone solution, ethanol solution and deionized water for 5 ~10min, dry at 110°C for 30min. The microwave dielectric ceramics that have undergone surface fine grinding, ultrasonic cleaning, and drying are placed on a rack through self-made fixtures and sent to the magnetron sputtering equipment. The sputtering source adopts a large cylindrical magnetron sputtering target, and the sputtering target is long 1180mm, outer diameter 72mm, inner diameter 54mm, vacuumize to make the vacuum of the cavity reach 5×10 -3 Above Pa, feed oxygen to make the pressure reach about 30Pa, turn on the radio frequency power supply of 90W, generate plasma, clean for three minutes, turn off the radio frequency power supply, close the oxygen inflation valve, and restore the vacuum de...

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Abstract

The invention discloses a method for metallizing the surface of a microwave dielectric ceramic. The method comprises (1) surface treatment: carrying out fine grinding on the surface of a microwave dielectric ceramic and carrying out ultrasonic cleaning and vacuum plasma cleaning, (2) depositing an underlying metal through a magnetron sputtering method under low magnetron sputtering atmospheric pressure of 0.1-0.2 pa, and (3) depositing a metallized film system through the magnetron sputtering method under conventional magnetron sputtering atmospheric pressure of 0.3-0.7 pa. Compared with the other microwave dielectric ceramic surface metallization methods, the method utilizes a two-step atmospheric pressure sputtering method to deposit a multiple-layer metallized film system, effectively improves the adhesion of a metallized film layer on the surface of a microwave dielectric ceramic, has a simple and reasonable process design, has industrial production feasibility, is environmentally friendly and does not produce pollution in production.

Description

technical field [0001] The invention belongs to the technical field of microwave dielectric ceramics, in particular to a method for metallizing the surface of microwave dielectric ceramics. Background technique [0002] Due to its high dielectric constant, low dielectric loss, and small temperature coefficient, microwave dielectric ceramics can be used as dielectric materials to make dielectric resonators, dielectric-loaded cavity filters, microwave dielectric antennas, duplexers, and dielectric oscillators, etc. Microwave devices play an important role in the fields of mobile communications, microwave base stations, military radar and satellite systems. The metallization of microwave dielectric ceramics is a key technology in the manufacture of microwave dielectric devices, which directly affects key performance indicators such as the quality factor (Q value) and reliability of the device. [0003] At present, there are mainly electroplating method and screen printing silv...

Claims

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Application Information

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IPC IPC(8): C04B41/90C04B41/91C23C14/18
CPCC04B41/90C04B41/0054C04B41/52C04B41/91C23C14/185C04B41/5133C04B41/4529C04B41/5111C04B41/5116
Inventor 郭江超金浩王德苗冯斌
Owner ZHEJIANG UNIV
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