Method for metallizing surface of microwave dielectric ceramic
A technology of microwave dielectric ceramics and surface metals, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve the problems of poor adhesion and difficulty in large-scale industrialization, and achieve strong adhesion and sputtering Fast film forming speed and good solderability
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Embodiment 1
[0027] (1) After finely grinding the surface of microwave dielectric ceramics with a size of 30mm×30mm×15mm and a dielectric constant between 2 and 100 with 1000-mesh sandpaper, put them into acetone solution, ethanol solution, and deionized water for ultrasonic cleaning for 5 ~10min, dry at 110°C for 30min. The microwave dielectric ceramics that have undergone surface fine grinding, ultrasonic cleaning, and drying are placed on a rack through self-made fixtures and sent to the magnetron sputtering equipment. The sputtering source adopts a large cylindrical magnetron sputtering target, and the sputtering target is long 1180mm, outer diameter 72mm, inner diameter 54mm, vacuumize to make the vacuum of the cavity reach 5×10 -3 Above Pa, feed oxygen to make the pressure reach about 30Pa, turn on the radio frequency power supply of 90W, generate plasma, clean for three minutes, turn off the radio frequency power supply, close the oxygen inflation valve, and restore the vacuum degre...
Embodiment 2
[0032] (1) After finely grinding the surface of microwave dielectric ceramics with a size of 30mm×30mm×15mm and a dielectric constant between 2 and 100 with 1000-mesh sandpaper, put them into acetone solution, ethanol solution, and deionized water for ultrasonic cleaning for 5 ~10min, dry at 110°C for 30min. The microwave dielectric ceramics that have undergone surface fine grinding, ultrasonic cleaning, and drying are placed on a rack through self-made fixtures and sent to the magnetron sputtering equipment. The sputtering source adopts a large cylindrical magnetron sputtering target, and the sputtering target is long 1180mm, outer diameter 72mm, inner diameter 54mm, vacuumize to make the vacuum of the cavity reach 5×10 -3 Above Pa, feed oxygen to make the pressure reach about 30Pa, turn on the radio frequency power supply of 90W, generate plasma, clean for three minutes, turn off the radio frequency power supply, close the oxygen inflation valve, and restore the vacuum degre...
Embodiment 3
[0037] (1) Microwave dielectric ceramics with a specification of 30mm×30mm×15mm and a dielectric constant between 2 and 100 are finely polished on the surface with 1000-mesh sandpaper, and then ultrasonically cleaned in acetone solution, ethanol solution and deionized water for 5 ~10min, dry at 110°C for 30min. The microwave dielectric ceramics that have undergone surface fine grinding, ultrasonic cleaning, and drying are placed on a rack through self-made fixtures and sent to the magnetron sputtering equipment. The sputtering source adopts a large cylindrical magnetron sputtering target, and the sputtering target is long 1180mm, outer diameter 72mm, inner diameter 54mm, vacuumize to make the vacuum of the cavity reach 5×10 -3 Above Pa, feed oxygen to make the pressure reach about 30Pa, turn on the radio frequency power supply of 90W, generate plasma, clean for three minutes, turn off the radio frequency power supply, close the oxygen inflation valve, and restore the vacuum de...
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