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Non-volatile memory and operation method thereof

A non-volatile memory technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as read interference, and achieve the effect of reducing potential difference and reducing read interference

Inactive Publication Date: 2019-09-27
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, for the unselected memory cells on the unselected string, the channel potential is much smaller than the conduction voltage, and each read operation will be disturbed by the difference between the conduction voltage and the channel potential

Method used

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  • Non-volatile memory and operation method thereof
  • Non-volatile memory and operation method thereof
  • Non-volatile memory and operation method thereof

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Embodiment Construction

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0033] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0034] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The present invention relates to a non-volatile memory and an operating method thereof, the non-volatile memory comprising: a memory cell array comprising a plurality of memory string groups, each memory string group comprising a plurality of memory strings; a common source end which is connected to the other end of each storage string through a first string selection tube; a plurality of first string selection tube word lines, wherein each first string selection tube word line is connected to the grid electrode of the first string selection tube of the corresponding storage string group; and a controller which is configured to conduct a first string selection tube of a selected memory string in the plurality of memory strings and a first string selection tube of a non-selected memory string in a pre-conduction stage before the reading stage, and apply a continuous first pre-charging voltage to the common source end. According to the nonvolatile memory and the operation method thereof, the read interference can be reduced by increasing the channel potential of the non-selected memory string.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a nonvolatile memory and an operation method thereof. Background technique [0002] The semiconductor memory may include a volatile memory (VM) and a nonvolatile memory (NVM). Volatile storage typically acts as a temporary storage medium, such as RAM, for an operating system or other running programs. Volatile memory cannot retain data when power is turned off. Non-volatile memory is used to store data that needs to be retained for a long time, such as a hard disk. Non-volatile memory retains data in the event of a sudden power loss or shutdown. Examples of non-volatile memory include flash memory (Flash memory), read-only memory ROM, or electrically erasable programmable read-only EEPROM, and the like. The flash memory includes a NAND type, a NOR type, and the like. [0003] When performing a read operation on a NAND flash memory, the conduction voltage applie...

Claims

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Application Information

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IPC IPC(8): G11C16/08G11C16/24G11C16/26
CPCG11C16/08G11C16/24G11C16/26
Inventor 刘红涛黄莹魏文喆
Owner YANGTZE MEMORY TECH CO LTD
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