Nonvolatile memory, data reading method thereof and storage system

Abstract

The invention discloses a nonvolatile memory, a data reading method and a memory system, the memory comprises memory units and word lines, the memory units in the same row are connected to the same word line, and the method comprises a pre-conduction stage and a reading stage which are performed in sequence. In the pre-conduction stage, the voltage of a word line adjacent to the word line of the selected storage unit is increased to a first level; in the reading stage, the voltage of the selected memory unit word line is raised to the initial reading level, and the voltage of the adjacent word line is raised to the second level. The method comprises at least one read operation of reading according to a low programming state, a medium programming state and a high programming state of the memory cell, an initial read level is a read level used for reading any one of the low programming state and the medium programming state, and a first level is greater than the read level used for reading the high programming state. According to the method, the coupling effect which affects the data reading reliability between the word lines can be relieved, the reading interference related to the potential difference in the data reading process is relieved, and the reading time period is compressed.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and more specifically, to a nonvolatile memory, a method for reading data from the nonvolatile memory, and a storage system. Background technique [0002] During the reading process of non-volatile memory, it is usually necessary to raise the voltage of the word line other than the storage row where the selected memory cell in the selected memory cell string is located to the conduction level, and turn the word line of the selected memory cell The voltage of the voltage rises to the read level, so that the channel of the selected memory cell string is turned on, so as to realize the reading of the information in the selected memory cell. [0003] However, as the storage density of non-volatile memory increases, the number of stacked layers of non-volatile memory such as three-dimensional memory is increasing, and the length of the channel in the structure is also increasing in th...

AI Technical Summary

Problems solved by technology

Therefore, the improvement of storage density of non-volatile memory has caused more data read problems

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