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Memory, reading operation method thereof and memory system

A read operation, memory technology, applied in the semiconductor field, can solve problems such as read operation failure

Pending Publication Date: 2022-04-29
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the related art, when performing a read operation on the memory, due to the influence of read disturbance, it is easy to cause the read operation to fail

Method used

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  • Memory, reading operation method thereof and memory system
  • Memory, reading operation method thereof and memory system
  • Memory, reading operation method thereof and memory system

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Embodiment Construction

[0053] In order to make the technical solutions and advantages of the embodiments of the present invention more clear, the specific technical solutions of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present invention.

[0054] The memory in the embodiment of the present invention includes but is not limited to a 3D NAND memory, and for ease of understanding, a 3D NAND memory is used as an example for illustration.

[0055] In practical applications, the 3D NAND memory may include a memory cell array and peripheral circuits; wherein, the memory cell array may include a plurality of memory strings; each memory string may include a plurality of memory cells stacked in a vertical direction . Each memory cell can be programmed and store one or more bits of data.

[0056] Specifically, the memory cell array of the 3D NAND type memory may specifically include: a semiconductor substrate: a plurality of gate layers a...

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Abstract

The embodiment of the invention provides a memory, a reading operation method thereof and a memory system. The reading operation method of the memory comprises the following steps: when determining that a first reading operation fails, executing a second reading operation; wherein in the process of executing the second reading operation, a first conduction voltage is applied to the first unselected word line, and a second conduction voltage is applied to the second unselected word line; the first unselected word line is a word line adjacent to the selected word line; the second unselected word lines are the remaining unselected word lines except the first unselected word line in all the unselected word lines; the first break-over voltage is greater than the second break-over voltage; the second break-over voltage is the voltage applied to the first unselected word line and the second unselected word line when the first read operation is executed.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a memory, its reading operation method, and a memory system. Background technique [0002] Non-volatile storage products with low power consumption, light weight and good performance, such as 3D NAND type memory, have been widely used in electronic products. However, in the related art, when the read operation is performed on the memory, due to the influence of the read disturbance, the read operation is likely to fail. Contents of the invention [0003] In order to solve one or more of the existing technical problems, embodiments of the present invention provide a memory, a read operation method thereof, and a memory system. [0004] An embodiment of the present invention provides a memory read operation method, including: [0005] When it is determined that the first read operation fails, perform the second read operation; wherein, [0006] In the process of...

Claims

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Application Information

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IPC IPC(8): G11C16/26G11C16/30G11C5/14
CPCG11C16/26G11C16/30G11C5/147G11C16/0483G11C16/08G11C16/32G11C11/5621
Inventor 刘红涛靳磊赵向南黄莹关蕾闵园园
Owner YANGTZE MEMORY TECH CO LTD
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