231results about How to "Reduce stray inductance" patented technology

The invention discloses an IGBT driving circuit embedded with an isolating source, comprising a power supply circuit and a driving circuit; wherein the power supply circuit sequentially comprises an oscillating circuit in charge of producing a push-pull driving signal, a transforming circuit which comprises at least one pair of switch tube and realizes energy transformation by alternate on / off according to the push-pull driving signal, a power transformer in charge of transmitting energy from the primary winding thereof to the secondary winding and a rectifying filtering circuit in charge of independent rectifying filtering on the secondary winding of the power transformer in two paths, wherein a common terminal is led out to realize positive and negative power supply output, so as to supply power to the driving circuit. A high-efficiency DC / DC isolating converter and the IGBT driving circuit are integrated, thus saving an outdoor isolating source and being convenient for application of a driver; and the invention is easy to be realized by adopting hybrid integrated thick film circuit, thus being beneficial to adopting SIP encapsulation and saving PCB area.

The invention provides an FPGA (field programmable gate array) control-based all-solid-state high-voltage nanosecond pulse generator, and belongs to the field of bio-electromagnetic technology. The nanosecond pulse generator mainly comprises a power supply system, a pulse forming system, a pulse measurement system, an FPGA control system, a signal conversion system and a portable computer. In the generator, the output pulse amplitude is between 0 and 10kV, the pulse width is between 200 and 1000ns, the pulse frequency is between 1 and 1000Hz, the falling edge is between 30 and 40ns, the number of pulse is between 1 and 1000, and particular parameters are determined according the requirement of tumor treatment. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator has the characteristics of intelligent regulation of pulse parameters (pulse amplitude, width, frequency and number), optical fiber transmission, high parameter accuracy, long service life, small size, low failure rate, good security and the like; and the generator outputs high pulse frequency, and is advantageous to quick searching of the optimal window parameters for inducing tumor cell apoptosis by virtue of intelligent regulation, so that the tumor treatment effect is improved. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator can be widely applied to tumor treatment.

The invention relates to a portable high-voltage nanosecond squarer which belongs to a medicinal device for inducing cancer cell apoptosis by using a high-voltage nanosecond square wave pulse electric field. The portable high-voltage nanosecond squarer mainly comprises a power supply system, a high-voltage direct current module, a low-voltage power supply, a pulse forming system and a pulse shaping and counting system. The portable high-voltage nanosecond squarer has output pulses with highest amplitude of 15kV, pulse width adjustment range of 50ns-1us, rising edge gradient of reaching 10ns and controllable recurrence frequency of 0.2-15Hz; and the quantity of the output pulses of the portable high-voltage nanosecond squarer can be set. The portable high-voltage nanosecond squarer can be adjusted in multiple-parameters (pulse amplitude, pulse width, recurrence frequency, pulse quantity and the like), large-range and flexible and independent way, and is beneficial to researching the optimal window parameter of the cancer cell apoptosis and promoting the cancer cell apoptosis as well as improving the cancer treatment effect. Meanwhile, the portable high-voltage nanosecond squarer has compact and light structure, reliable work, simple operation and convenient popularization and application, and can be widely applied to the treatment of various cancers.

The invention provides a dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet, belonging to the technical field of large power semiconductor switches. The power cabinet provided by the invention comprises an inverted power unit cabinet, a capacitor cabinet and a rectified power unit cabinet, wherein each inverted or rectified power unit cabinet in the invention comprises three groups of inverted / rectified power module units; each group of the inverted / rectified power module units are provided with more than four IGCT (integrated gate commutated thyristor) elements to constitute one phase of inverted / rectified output; and the capacitor cabinet is provided with auxiliary circuits such as a direct current capacitor, a water supplying / returning vertical main pipe, a capacitor precharging circuit, parallel resistors, an anti-parallel diode and the like, as well as corresponding bus bars and the like.

The invention relates to an integrated gate commutated thyristor (IGCT) three-level power module belonging to the technical field of high-power semiconductor switches. The IGCT three-level power module comprises an IGCT, an antiparallel flywheel diode, a left metal frame weld assembly, a right metal frame weld assembly, a pressing mechanism, a square water-cooling radiator, an insulating fixed pin, an insulating draw rod, an insulating hook pin, a P phase leading-in bus bar, a P phase leading-out bus bar, an M phase leading-out bus bar, an N phase leading-out bus bar, an N phase leading-in bus bar and the like. The invention adopts a structural style of three mutually parallel power strings, and each power string realizes the compression joint of electric / electronic components with the corresponding connecting bus bars, the square water-cooling radiator and insulators by the pressing mechanism. In the invention, absorption circuits are compactly arranged, thereby decreasing the mutual stray inductance; and a waterway interface and a power circuit interface are separated and are arranged respectively in the front and at the back.

The invention discloses a current-sharing circuit for high-power parallel IGBT modules. The circuit comprises a controller and a plurality of current-sharing control branches connected in parallel, wherein each current-sharing control branch comprises a first current detection circuit, a second current detection circuit, a first drive circuit, a second drive circuit and a transformer T; the firstcurrent detection circuits and the second current detection circuits are used for detecting output current of the first IGB module and the second IGBT module separately to obtain two paths of detection current transmitted to the controller; the controller generates two paths of control signals according to the magnitudes of the two paths of detection current; the two paths of control signals are driven through the first drive circuits and the second drive circuits separately and then transmitted to the transformers T; and the transformers T synchronously output the two paths of control signalsto grids of the first IGBT module and the second IGBT module. According to the current-sharing circuit, the problem of imbalance of static current-sharing in a conducting state and dynamic current-sharing in a switching state is solved while the cost of a control driver is not greatly increased.

Provided are a three-level power converter and a power unit thereof. The power unit includes a power switch module and a laminated busbar structure. The power switch module includes a first power semiconductor switch module and a clamping diode module, which have a first, second, and third terminal respectively. The laminated busbar structure includes a third, second, and first busbar layer laminated on the power switch module. The third busbar layer includes a first sub-busbar connecting to the first terminal of the first power semiconductor switch module, a second sub-busbar connecting to the third terminal of the first power semiconductor switch module and the first terminal of the clamping diode module, a third sub-busbar connecting to the second terminal of the clamping diode module and the third terminal of the second power semiconductor switch module, and a fourth sub-busbar connecting to the second terminal of the second power semiconductor switch module.

The invention discloses a high-power electromagnetic surveying transmitter system which comprises a generator set, a three-phase rectification bridge, a filter capacitor, an H type inversion bridge, a booster transformer, a single-phase rectification bridge, a transmitting bridge, an electrode, a temperature detection circuit, a first voltage detection circuit, a second voltage detection circuit, a first current detection circuit, a second current detection circuit, a first central processing unit, a second central processing unit and a transmitting control platform. Transmitting voltage parameter and transmitting current parameter are transferred through communication, and actual transmitting voltage and actual transmitting current are displayed in real time through parameter feedback; transmitting parameters of the transmitting control platform are received to control the transmitting of the transmitting bridge, and transmitting voltage and transmitting current signals are acquired and fed back to the transmitting control platform in real time; the PWM (pulse-width modulation) of the H type inversion bridge is realized to obtain stable and reliable transmitting signals; and the electrode is the signal transmitting port of the system. Thus, the accuracy and response speed of the transmitted waveform are improved.

The invention provides a semiconductor device power module and belongs to the technical field of semiconductors. The power module comprises supporting structures which are arranged on the two sides and are used for fixing the power module, and a power component which is arranged between the supporting structures and extends along the longitudinal direction. The power component comprises a plurality of semiconductor devices which are press-fit through a press fitting mechanism. Each semiconductor device comprises an IGCT (Integrated Gate Commutated Thyristor), a clamping absorber diode, a neutral-point-clamped diode and a freewheel diode. The semiconductor device power module provided by the invention has the advantages that the electrical performance is excellent, the potential of an IGCT device is fully realized, the structure is compact, the stray inductance is small, the heat dissipation capability is strong, the power module is easy to maintain and the like.

The invention provides a power unit of a large-power current transformer. The power unit comprises a whole power-unit frame, and a laminated mother board (10), insulated gate bipolar transistor (IGBT) power elements and drivers (12) thereof, a capacitor support plate (13), a support capacitor array (14), a radiator fixing plate (15), a radiator (16), a blower fan installing plate (17) and a heat radiation blower fan (18) which are placed within the whole power-unit frame. The whole power-unit frame comprises a rectangular installing plate (6) placed in the rear of the whole power-unit frame; the support capacitor array (14) is mounted on the installing plate (6) via the capacitor support plate (13); the heat radiation blower fan (18) is mounted on the installing plate (6) via the blower fan installing plate (17); the IGBT power elements and drivers (12) thereof are fixed are fixed on the installing plate (6) via the radiator fixing plate (15); and the laminated mother board (10) is parallel with the installing plate (6). Main components are mounted on the same installing plate, so that all the components are integrated and packaged to form the power unit.

The invention relates to an electromobile and an electronic control device integration device thereof. The electronic control device integration device comprises a main control monitoring unit, a motor controller set, an electrical accessory controller set, a first pre-charging circuit and a second pre-charging circuit, all of which are arranged in a centralized mode. A vehicle-mounted high-voltage direct current port is connected with the motor controller set through the first pre-charging circuit and is connected with the electrical accessory controller set through the second pre-charging circuit. The main control monitoring unit is connected with the first pre-charging circuit and the second pre-charging circuit in a control mode. By means of the integration design, the structure is more compact, arrangement is neater, high-low voltage wiring harness connecting and number of connectors are reduced, and the stability of whole electromobile running is improved; by means of the independent pre-charging circuits and a main contactor, the power-assisted steering and low-voltage power supplying of the whole electrombile are normal when a motor controller of the power of the whole electrombile breaks down, and the safety of the whole electromobile running is improved.

The invention relates to a water-cooling power module of a medium-voltage high-power frequency changer, in particular to a uniphase H-bridge power unit of a series-wound H-bridge multi-level inverter, and belongs to the technical field of electric propulsion. The water-cooling power module of the medium-voltage high-power frequency changer comprises a module framework, a positive power component, a negative power component, two water-cooling inductances, two water-cooling resistances, five sets of high-voltage large-current connector, a power module, a power conversion terminal, a photoelectricity connector and sliding rails, wherein the five sets of high-voltage large-current connector are used for providing channels for the module to input and output current. The positive power component and the negative power component are respectively positioned on the top of the module and on the bottom of the module, and are installed fixedly and symmetrically on the framework by means of a T-shaped water-cooling heat dissipation plate inside the power components. Two water division pipes used for allowing water of the T-shaped water-cooling heat dissipation plate to passing in and out are directly installed on the framework at the right front portion of the module. The module is installed in a cabinet body by means of the pair of precise heavy-load sliding rails. The water-cooling power module of a medium-voltage high-power frequency changer has the advantages of being low in stray inductance, large in power density, compact in structure, capable of being maintained from the front side, high in reliability, good in maintainability and the like, and capable of being used in the medium-voltage high-power propulsion frequency changer.

The invention discloses a converter power module body device and a processing method thereof. The body device comprises a busbar body, an IGBT, an intermediate support capacitor and a surge absorption capacitor, and the busbar body is ' '-shaped, the intermediate support capacitor is fixed above the long side of the busbar body by a screw, the surge absorption capacitor is fixed inside the short side of the busbar body by a screw and the IGBT is fixed outside the short side of the busbar body by a screw. The processing method includes processing a copper plate into a copper bar with a boss and a hole, compounding insulating paper from multilayer Tyvek, arranging three pieces of insulating paper and three copper bars in sequence to be folded and pressed and forming the busbar body, and installing parts on the busbar body. Due to the advantages of convenient wiring, wiring space saving, convenient installation and disassembly and the reduction of stray induction on a main circuit, the body device facilitates the improvement of electrical property, thus enhancing the working stability of a converter system.

The invention provides an internal layout structure of a switched reluctance machine controller of an electric vehicle. The internal layout structure comprises a high-voltage part, a low-voltage part and a radiator base (13). The high-voltage part comprises an IGBT module (1), a thin-film capacitor (2), a high-voltage copper bar and a pre-charge contactor (3). The high-voltage copper bar comprises a copper bar positive electrode (4), a copper bar U positive electrode (5), a copper bar U negative electrode (6), a copper bar V positive electrode (7), a copper bar V negative electrode (8), a copper bar W positive electrode (9), a copper bar W negative electrode (10) and a copper bar negative electrode (11). The low-voltage part comprises a low-voltage main control board (12) and a low-voltage connector (17). The low-voltage connector (17) is connected with the low-voltage main control board (12), the high-voltage part is arranged on the radiator base (13), and the low-voltage part is arranged above the high-voltage part. The hierarchical design of the high-voltage part and the low-voltage part is adopted in the longitudinal direction, and the internal layout structure is simple, compact in layout structure, high in system reliability and suitable for large-scale batch production.

The invention relates to a fast-recovery commutation diode used for high frequency electroplating and a production method thereof, wherein the fast-recovery commutation diode has the high frequency property and is suitable for 30KHz / 2-5KA / (200-400)V high frequency electroplating with both high voltage and high current density. An N-type (100) radial single crystal silicon piece, which has specific resistance Rho n of 5-9 Ohm-cm, diameter of 48-70 mm and thickness of 175-185 microns, is adopted; silicon piece diffusion is conducted, and double-surface once diffusion is carried out at temperature of 1250 DEG C; the diffusion piece detection is carried out; phosphorosilicate glass and borosilicate glass are used for absorption, the temperature is slowly lowered from 1250 DEG C to 1050 DEG C, the speed rate is 1 DEG C per minute, and isothermal absorption is carried out for 2-3 h; slow temperature reduction is continued till furnace temperature is reduced to 600 DEG C, then furnace delivery is carried out, and minority carrier lifetime Tao p is caused to reach 12-16 Mu S; platinum diffusion is carried out at low temperature so that the minority carrier lifetime Tao p is controlled to be 4-6 Mu S; 12 Mev electron irradiation is carried out so that the minority carrier lifetime Tao p of a base region is 0.9-1.1 Mu S; the two surfaces of the silicon piece are plated with titanium-nickel-gold by means of vapor deposition and then undergo table-board spray sand molding, desanding, cleaning, corrosion, passivation protection, intermediate test, shell arrangement and packaging, and after tests testify qualification, the finished product is produced.

The invention relates to a novel power conversion unit allowing a laminated coating row and a composite busbar to be used in a hybrid mode. The problems that for a traditional cable connection mode, external output appearance is messy, capacity expansion is not easy, and layout and connection cannot be achieved when current becomes larger are solved. The novel power conversion unit comprises an air-cooled radiator, a frame, the composite busbar, a mounting plate, three IGBTs, eight support capacitors, three absorption capacitors, three drive circuit boards and two discharge resistors. On the basis of the air-cooled radiator, the multi-busbar laminated modular design is adopted. As the modular design is adopted, space is saved, maintenance and replacement are facilitated, and the maintenance cost is lowered; by the adoption of the multi-type composite busbar combination use technology, the reliability of a main circuit is improved, and the difficulty that a cable detours in a narrow space is completely avoided; besides, since the structure is compact, expansion of higher power is facilitated, and operation loss and the maintenance cost caused by faults can be reduced.

The invention belongs to the field of power electronics and particularly relates to an absorption circuit of a high-power electronic device. RC (Resistor-Capacitor) buffer absorption circuits are used as absorption circuits and are connected in parallel with the anode and the cathode of a direct-current bus bar; absorption resistors are made of heatproof high-resistance materials and are designed in pairs; holes are arranged at both ends of the absorption resistors and used for connecting, fixing and mounting; one end of each absorption resistor is connected with an absorption capacitor and the other end of the absorption resistor is fixed on the direct-current bus bar; the absorption capacitor is fixed by a pair of absorption resistors; and the absorption resistors have the functions of connecting an absorption circuit and fixing the absorption capacitor while being used as resistors. The application of the resistors made of materials of iron, chromium and aluminum greatly reduces the volume of the absorption resistors, reduces the cost, ensures high resistance power, flexible design of resistor structure and convenient connection with absorption capacitor, effectively reduces the stray inductance of the absorption circuit and has the function of fixedly installing the absorption circuit.

The invention discloses a three-level IGBT power cabinet based on a heat pipe radiator. The three-level IGBT power cabinet comprises a rectification power module, an inverting power module, a direct-current bus capacitor module, laminated busbars, a rectifying current sensor and an inverting current sensor. Elements of the rectification power module and inverting power module are the same in arrangement manners and are mounted on the left and right sides of the upper portion of the rear side wall of a cabinet body respectively; the direct-current bus capacitor module is fixedly mounted in the middle of the rear side wall of the cabinet body, and the rectification power module and the inverting power module are symmetrical about the direct-current bus capacitor module; the rectification power module, the inverting power module and the direct-current bus capacitor module are connected through the laminated busbars, and the rectification power module and the inverting power module are connected to the rectifying current sensor and the inverting current sensor respectively. The cabinet body is pre-provided with an alternate-current incoming / discharging wire hole position. The cabinet has the advantages that the standardization of a main module is implemented, the structure is more compact, the maintenance is simplified, the efficiency is improved through the heat pipe radiating manner, and the circuit stray inductance is reduced.

The present invention relates to a three-level traction power module based on a SiC power device and an inverter circuit. An I-type three-level inverter bridge structure is adopted in an inverter maincircuit. The traction power module is successively integrated with a controller, a support capacitor module, a stack-layer bus-bar, a drive module, a SiC power module and a heat-dissipation piece from top to bottom. SiC-MOSFET(s) and SiC-DIODE power device(s) are adopted in the SiC power module. The drive module is connected with the SiC power module, and the controller is connected with the drive module to control the on-off state of the SiC power module. The support capacitor module is connected with the SiC power module, and the SiC power module is fixedly connected with the heat-dissipation piece. According to the module, the integrated and systematic design is adopted in the traction power module, the volume and the weight of the module are effectively reduced by using the high-frequency and high-temperature characteristics of the SiC power device, and all aspects of performances of the traction power module are greatly improved compared with the conventional power module based on Si device(s).

The invention discloses a thin-film capacitor integrating EMC and discharge functions and a motor controller thereof. The thin-film capacitor comprises a capacitor shell with a top seal and a bottom opening, and a heat dissipation upper cover and a water cooling bottom plate which are arranged at the upper and lower ends of the capacitor shell. A heat conduction insulation pad, a laminated busbarand an X capacitor core roll are sequentially arranged in the capacitor shell from bottom to top. The laminated busbar is provided with an EMC module comprising a Y capacitor, a bleeder resistor and aPCB, the capacitor shell is filled with an epoxy packaging adhesive to package the X capacitor core roll and the EMC module, and the surface of the capacitor shell is provided with a magnetic ring for an input terminal of the laminated busbar to pass through. When the thin-film capacitor is installed in the motor controller shell, the top and the bottom of the thin-film capacitor are both provided with cooling designs, and the water channel heat dissipation surface of the motor controller shell and the air cooling heat dissipation surface of the controller upper cover can be used for double-surface cooling at the same time.

The invention refers to a low inductance power module. A power module includes a housing, a power semiconductor die enclosed within the housing and a first power terminal embedded in the housing and electrically connected to the power semiconductor die. A portion of the first power terminal protrudes outward from an external surface of the housing. The power module further includes a second power terminal embedded in the housing and electrically connected to the power semiconductor die and electrically insulated from the first power terminal. A portion of the second power terminal protrudes outward from the external surface of the housing by a distance less than the portion of the first power terminal so that the module has power connections with different heights.

The invention provides an improved crimping type IGBT device. The improved crimping type IGBT device comprises a tube, and plate-shaped metal electrodes that are coaxially arranged at the upper and lower ends of the tube; a lug boss is fixed on the inner side face of the lower end metal electrode; IGBT power sub modules are crimped between the lug boss and the upper end metal electrode; each IGBT power sub module comprises a grid electrode signal input end and a gird electrode signal output end; the grid electrode signal input end is electrically connected with a grid electrode PCB that is parallel with the lower end metal electrode; and the grid electrode signal output end is electrically connected with an auxiliary emitting electrode PCB that is parallel with the lower end metal electrode. According to the technical scheme provided by the improved crimping type IGBT device, the stray inductance and stray capacitance of the auxiliary emitting electrode circuit are reduced, the consistency of the parameters of each IGBT power sub module driving circuit of the crimping type IGBT device is improved, and the risk of current oscillation among the IGBT power sub modules is reduced.

The invention relates to a traction converter device, which comprises a pre-charging circuit, an integrated converter module and an isolation contactor, wherein the pre-charging circuit is connected with a traction winding of a traction transformer and used for charging a supporting capacitor in a DC circuit of the traction converter device; the integrated converter module is connected with the pre-charging circuit and used for performing AC-DC conversion and DC-AC conversion on alternating current transmitted by the pre-charging circuit to obtain direct current applicable to a traction motor;and the isolation contactor is arranged between an output end of the integrated converter module and a connection port of the traction motor and used for isolating the integrated converter module from the traction motor when the integrated converter module breaks down. The traction converter device is internally integrated with the isolation contactor which can isolate the traction converter device from a permanent magnet synchronous motor in the case that there is a fault in the traction converter device. The device adopts the integrated converter module which can enable the whole device tobe smaller in size, lighter in weight and more reliable in system.

The invention provides a dual-purpose voltage divider based on a standard capacitor. The dual-purpose voltage divider comprises a damping resistor, a high-voltage guide rod, a high-voltage electrode, a low-voltage electrode, a ground electrode and a shield electrode, wherein the high-voltage electrode, the low-voltage electrode, the ground electrode and the shield electrode are arranged coaxially in a metal ground cylinder. The low-voltage electrode, the ground electrode and the shield electrode are arranged on the outside of the high-voltage electrode successively. One end of the damping resistor is connected with a high-voltage lead and the other end of the damping resistor is connected with the high-voltage guide rod. The high-voltage guide rod is connected with the high-voltage electrode. Compared with the prior art, the dual-purpose voltage divider based on the standard capacitor uses a low-inductance structure, which reduces the stray inductance of a voltage divider circuit so as to accurately measure impact voltage and power frequency voltage.

The invention discloses a high-capacity five-level converter power cabinet which belongs to the technical field of semiconductor switches. The five-level converter power cabinet comprises a rectifying power cabinet, a first inversion power cabinet, a capacitor box and a second inversion power cabinet in sequence from left to right, wherein the rectifying power cabinet internally comprises three groups of independent rectifying power modules; the capacitor box internally comprises three independent capacitor power modules; and the first and second inversion power cabinets internally comprise three groups of independent inversion power modules respectively. According to the high-capacity five-level converter power cabinet, a compact circuit connection form is provided, so that the stray inductances of the circuits are decreased and the output capability of a device is improved. At the same time, when a plurality of five-level convertor power cabinets are connected in parallel for output use, the output capability of the device can be improved to a greater extent, so that the working performance of the device is ensured.

An electronic circuit device comprises: a semiconductor element having a first surface and a second surface, with the first and second surfaces being on first and second sides of the semiconductor element, respectively, and facing in opposite directions; a first electrode on the first surface; a second electrode on the second surface; a first circuit board electrically connected to the first electrode via a metallic plate such that the metallic plate and the semiconductor element are on the first circuit board; a second circuit board on the second side of the semiconductor element, the second circuit board having a control circuit for the semiconductor element; and a metallic wire for directly electrically interconnecting the second electrode and the second circuit board.

The invention relates to a laminated bus bar type electromechanical servo driver, which comprises a power device, a socket, a laminated bus bar, a snubber capacitor, a power board and a Hall current sensor. The power device is provided with a bus end and a three-phase end; the socket is fixedly arranged on the outside of the servo driver; the laminated bus bar is provided with a strip-shaped structure, the cross section of the laminated bus bar is shaped like an L, the two sides of the L respectively correspond to a first connecting part and a second connecting part of the laminated bus bar, the first connecting part is connected with the socket, and the second connecting part is connected with the bus end of the power device; the snubber capacitor is arranged at the corner of the L of the laminated bus bar, the snubber capacitor comprises a capacitor terminal, and the capacitor terminal is connected with the bus end of the power device; the Hall current sensor is arranged in the servo driver, and is located at the inner end of the three-phase end of the power device, the Hall current sensor is provided with a sensor cabling hole, and a three-phase cable runs through the sensor cabling hole, and is connected with the three-phase end.

The invention discloses an integrated semiconductor power assembly, which comprises a bottom plate, a top plate and multiple twin-thread screws connected with the bottom plate and the top plate, wherein a first lower buckling piece and a second lower buckling piece are sequentially arranged above the bottom plate; a first upper buckling piece and a second upper buckling piece are sequentially arranged below the top plate; both the first upper buckling piece and the second lower buckling piece are provided with insulators; multiple water-cooled heat radiators are arranged between the two insulators; a power device is clamped between adjacent two water-cooled heat radiators; the adjacent two power devices are connected in series. The integrated semiconductor power assembly has the advantages of compact structure, little stray inductance, strong heat radiation ability and easy maintenance. The invention also discloses a pressing gauge for the integrated semiconductor power assembly, power assemblies with various ordinary sizes can be pressed, the precision of the pressed power assembly is high, and the rejection rate is low.

The present invention relates to a capacitor with high cooling power, including a housing and a capacitor core, wherein, the housing is composed of two low magnetic permeability metal cases, each metal case is provided with a dent, so as to constitute an accommodating cavity by combining the two metal cases, a terminal is provided on the capacitor core, an insulation cloth is provided on the envelop of the core and is jogged in the accommodating cavity, the terminal extending outside the housing, a fixing piece is provided between the mutual combined cases to keep them together, and a heat conducting flame-retarded resin is filled in around the capacitor core in the accommodating cavity. Because the housing is formed by at least two low magnetic permeability metal cases, the capacitor diminish the effects of magnetic induction heating, when the capacitor generates heat during working, the heat is rapidly emitted from the capacitor core surface to the metal cases, as the thermal conductivity factor of the metal case can attain 30 - 100, so the metal cases are taken as heat radiating fins, this structure can effectively improve the overall cooling effect of the capacitor, the original cooling power of the capacitor core can be increased, in order to meet the requirements of the use in occasion having high current capacitors and high-heat-power.

The invention relates to an electric vehicle motor controller structure. The electric vehicle motor controller structure includes a capacitor component (1), a power module assembly (2), a module cover plate assembly (3) and a wire outgoing cover plate (4); the capacitor component (1) is adopted as a supporting component for the motor controller and is located at the bottommost portion of the motor controller; the power module assembly (2) is located directly above the capacitor component (1) and is fixed onto the capacitor component (1); the module cover plate assembly (3) is of a hollow structure and is connected with the capacitor component (1) through mounting holes at the periphery of the module cover plate assembly (3); the wire outgoing cover plate (4) is arranged above the module cover plate assembly (3); the capacitor component (1), the module cover plate assembly (3) and the wire outgoing cover plate (4) form a controller housing; and the outer surface of the capacitor housing (101) of the capacitor component (1) is provided with mounting legs for fixing the motor controller.