Integrated gate commutated thyristor (IGCT) three-level power module

A technology for commutating thyristors and power modules, which is applied in the direction of output power conversion devices, electrical components, cooling/ventilation/heating transformation, etc., and can solve the problems of reduced reliability of converters, large influence of stray parameters, and large heat generation of devices and other problems, to achieve the effect of reducing the equivalent inductance, small space size, and simple assembly

Active Publication Date: 2011-05-18
AUTOMATION RES & DESIGN INST OF METALLURGICAL IND +1
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

However, due to the integration of high voltage and high current, large-capacity converters have insufficient device capacity, great influence of stray parameters, large heat gene

Method used

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  • Integrated gate commutated thyristor (IGCT) three-level power module
  • Integrated gate commutated thyristor (IGCT) three-level power module
  • Integrated gate commutated thyristor (IGCT) three-level power module

Examples

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Embodiment Construction

[0016] figure 2 It is an embodiment of the present invention. Including: left metal frame weldment 1, right metal frame weldment 9, IGCT element 2, square water-cooled radiator 12, press-fit mechanism 10, insulator 11, anti-parallel diode 3, clamp absorption diode 4, midpoint clamp diode 5. Clamp absorbing capacitor 6, clamp capacitor anti-parallel resistor 7, clamp absorbing resistor 20, clamp absorbing reactor 19, midpoint clamping resistor 8, pull spring 16, insulating pull rod 14, insulating fixing pin 13, insulating Check pin 15, inlet and outlet jellyfish pipes 17, inlet and outlet water ball valves 18, P phase outlet busbar group 22, N phase outlet busbar group 25, P phase inlet busbar 21, N phase inlet busbar 26, M phase outlet busbar 23. The square water-cooled reactor overlaps the busbar 24, etc. In the present invention, the left metal frame welding part 1 and the right metal frame welding part 9 welded by thick steel plates are used as supports on the left and r...

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Abstract

The invention relates to an integrated gate commutated thyristor (IGCT) three-level power module belonging to the technical field of high-power semiconductor switches. The IGCT three-level power module comprises an IGCT, an antiparallel flywheel diode, a left metal frame weld assembly, a right metal frame weld assembly, a pressing mechanism, a square water-cooling radiator, an insulating fixed pin, an insulating draw rod, an insulating hook pin, a P phase leading-in bus bar, a P phase leading-out bus bar, an M phase leading-out bus bar, an N phase leading-out bus bar, an N phase leading-in bus bar and the like. The invention adopts a structural style of three mutually parallel power strings, and each power string realizes the compression joint of electric/electronic components with the corresponding connecting bus bars, the square water-cooling radiator and insulators by the pressing mechanism. In the invention, absorption circuits are compactly arranged, thereby decreasing the mutual stray inductance; and a waterway interface and a power circuit interface are separated and are arranged respectively in the front and at the back.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a novel integrated gate commutated thyristor (The Integrated Gate Commutated Thyristor, referred to as IGCT) three-level power module, which is suitable for 3-27MVA high-power converters, It can be widely used in the field of medium voltage transmission. Background technique [0002] In the medium and small power converters, low-power power electronic devices are used. The application technology of the devices is mature, the margin is high enough, the failure rate is low, and the reliability of the entire system is high. However, due to the integration of high voltage and high current, large-capacity converters have insufficient device capacity, great influence of stray parameters, large heat generation of devices, and difficulty in heat dissipation, which greatly reduces the reliability of the converter and has become a comprehensive promotion of the con...

Claims

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Application Information

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IPC IPC(8): H02M1/00H05K7/20
Inventor 李崇坚李向欣朱春毅李英杰王成胜周亚宁唐磊兰志明杨琼涛段巍李凡
Owner AUTOMATION RES & DESIGN INST OF METALLURGICAL IND
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