Integrated gate commutated thyristor (IGCT) three-level power module

Abstract

The invention relates to an integrated gate commutated thyristor (IGCT) three-level power module belonging to the technical field of high-power semiconductor switches. The IGCT three-level power module comprises an IGCT, an antiparallel flywheel diode, a left metal frame weld assembly, a right metal frame weld assembly, a pressing mechanism, a square water-cooling radiator, an insulating fixed pin, an insulating draw rod, an insulating hook pin, a P phase leading-in bus bar, a P phase leading-out bus bar, an M phase leading-out bus bar, an N phase leading-out bus bar, an N phase leading-in bus bar and the like. The invention adopts a structural style of three mutually parallel power strings, and each power string realizes the compression joint of electric / electronic components with the corresponding connecting bus bars, the square water-cooling radiator and insulators by the pressing mechanism. In the invention, absorption circuits are compactly arranged, thereby decreasing the mutual stray inductance; and a waterway interface and a power circuit interface are separated and are arranged respectively in the front and at the back.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a novel integrated gate commutated thyristor (The Integrated Gate Commutated Thyristor, referred to as IGCT) three-level power module, which is suitable for 3-27MVA high-power converters, It can be widely used in the field of medium voltage transmission. Background technique [0002] In the medium and small power converters, low-power power electronic devices are used. The application technology of the devices is mature, the margin is high enough, the failure rate is low, and the reliability of the entire system is high. However, due to the integration of high voltage and high current, large-capacity converters have insufficient device capacity, great influence of stray parameters, large heat generation of devices, and difficulty in heat dissipation, which greatly reduces the reliability of the converter and has become a comprehensive promotion of the con...

AI Technical Summary

Problems solved by technology

However, due to the integration of high voltage and high current, large-capacity converters have insufficient device capacity, great influence of stray parameters, large heat generation of devices, and difficulty in heat dissipation, which greatly reduces the reliability of the converter and has become a comprehensive promotion of the converter. obstacles

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