78 results about "Integrated gate-commutated thyristor" patented technology

The invention discloses a three level integration gate commutation SCR potential source converter bridge arm through protector, the bridge arm through protector is parallel-connected in the direct-current circuit of a three level integration gate commutation SCR potential source converter which is formed by the parallel connection of a rectifier, a direct-current filter electric capacity and a inverter in turn, and consists of a protection unit, a bridge arm through protection control unit which is connected with the protection unit, and a plurality of bridge arm through signal detection unit which is connected with the bridge arm through protection control unit. The invention can rapidly bypasses and reduces the short-circuit current of a through bridge arm; bypasses a reverse surge current produced by a direct-current circuit inductance; consumes the direct current bus energy and speeds up the decay process of surge current; after examining the bridge arm goes nonstop, can trigger the bypass thyristor to drain direct current energy through the bypass, and sends out the alarm to the system, causes the system interconnection protection. When occurring the breakdown that the bridge arm goes nonstop, the invention can protect the three-level IGCT potential source medium voltage frequency converter effectively.

The invention relates to an integrated gate commutated thyristor (IGCT) three-level power module belonging to the technical field of high-power semiconductor switches. The IGCT three-level power module comprises an IGCT, an antiparallel flywheel diode, a left metal frame weld assembly, a right metal frame weld assembly, a pressing mechanism, a square water-cooling radiator, an insulating fixed pin, an insulating draw rod, an insulating hook pin, a P phase leading-in bus bar, a P phase leading-out bus bar, an M phase leading-out bus bar, an N phase leading-out bus bar, an N phase leading-in bus bar and the like. The invention adopts a structural style of three mutually parallel power strings, and each power string realizes the compression joint of electric/electronic components with the corresponding connecting bus bars, the square water-cooling radiator and insulators by the pressing mechanism. In the invention, absorption circuits are compactly arranged, thereby decreasing the mutual stray inductance; and a waterway interface and a power circuit interface are separated and are arranged respectively in the front and at the back.

The invention provides a phase module for a three-level integrated gate-commutated thyristor frequency converter, comprising the structure that two strings of same eudipleural crimping devices are arranged in a framework, wherein each string of crimping devices are same and comprise six heat radiators; a first integrated gate-commutated thyristor (IGCT), a first free-wheeling diode, a second free-wheeling diode, a second IGCT and a clamping diode are sequentially connected among the six heat radiators; same devices on two sides of absorbing circuits at the rear parts of the two strings of crimping devices are symmetrically arranged; a clamping capacitor and an absorbing resistor which are vertically arranged are arranged on each side of the absorbing circuits; absorbing diodes are horizontally arranged above the clamping capacitor and the absorbing resistor; and conductive bus bars are respectively arranged on two sides of the framework and are eudipleural with respect to the framework. By using the phase module, the devices of the frequency converters are divided into two same strings, are eudipleural and are vertically distributed in the framework, so that the connecting line distance among various devices can be reduced. In addition, the line outlet positions are eudipleural, thus the stray inductance of the whole circuit can be greatly reduced.

The invention relates to an integrated gate-commutated thyristor (IGCT)-based hybrid cascaded H-bridge multi-level high-voltage inverter, which belongs to the technical field of electric drive. The inverter comprises a rectification unit, a DC unit, an inversion unit and a dv/dt filter, wherein the secondary side of a multi-winding rectifier transformer is connected with the input of the rectification unit; the output of the rectification unit is connected with the input of the DC unit; the output of the DC unit is connected with the inversion unit; and the output of the inversion unit is connected with the dv/dt filter. The inverter solves the problem that 10 kV high-voltage high-capacity output is obtained without realizing direct series connection by IGCT devices, less impacts a power grid in a working process, increases the sine degree of output voltages, has relatively lower difficulties in control and enhanced reliability, improves the working stability of a system, effectively inhibits current harmonics on a power grid side, and makes the distortion rate of line current on an input side meet standard requirements.

The invention discloses a manufacturing method of a reverse-conducting integrated gate-commutated thyristor. The method comprises the following steps: S100: lightly doping one side of an original N- substrate with a layer of N' impurity; S101, fabricating a P-type base region of a GCT (Gate Commuted Tryristor) and a P-type base region of an FRD (Fast Recovery Diode); S102, performing N' impurity doping on the other side of the N- substrate; S103, performing pre-deposition on a GCT cathode and an FRD cathode; S104, etching isolation trenches on the upper surface of an isolation region and a gate region of the GCT; S105, performing N+ propelling and passivation on the GCT cathode and the FRD cathode; S106, performing P+ doping on a GCT anode; and S107, fabricating electrodes. According to the invention, using the compensating effect of the impurity, under the condition that the P-type doping distribution of the isolation region is not changed, the effective width of the isolation region is increased, and the shortcomings existing in the prior art that the diffusion control precision is not high, and the process is complicated and not suitable for high pressure devices are overcome.

The invention discloses a five level single round high-power anti-explosion synchronous motor frequency conversion speed regulation system based on an integrated gate commutated thyristor (IGCT). The five level single round high-power anti-explosion synchronous motor frequency conversion speed regulation system based on the IGCT comprises a three phase power supply, a phase shifting transformer, a five level inverter, a control panel, a human-computer interface, a three phase compressor, a detecting system and an outer portion interface, wherein the three phase power supply, the phase shifting transformer, the fiver level inverter and the three phase compressor are sequentially connected with each other, and are connected with the detecting system; the detecting system, control panel and the human-computer interface are sequentially connected with each other, and the control panel is further connected with the outer portion interface and the five level inverter. The five level single round high-power anti-explosion synchronous motor frequency conversion speed regulation system based on the IGCT adopts a high voltage large current IGCT as a power device, adopts the modularization technology simultaneously, has the advantages of being high in power density, small in installation size, and convenient to maintain, and can be further applied to other places where a voltage class is matched with current simultaneously.

The invention relates to a power unit testing circuit for an IGCT (integrated gate commutated thyristor) three-level medium voltage frequency converter. The frequency converter is technically characterized in that an input switch Q1 is connected with a voltage regulator T1 and then is respectively connected with a transformer T11 and a transformer T12 by virtue of a branch switch Q11 and a branch switch Q12, the transformer T11 and the transformer T12 are respectively connected with a rectifier A and a rectifier B, the rectifier A and the rectifier B are respectively connected with a filter capacitor CA and a filter capacitor CB in parallel, a discharge circuit is respectively connected with the two ends of the filter capacitor CA and the filter capacitor CB in parallel, the discharge circuits are connected with a grounded circuit, the two filter capacitors are connected with a tested power unit by virtue of a di/dt buffer circuit, the tested power unit is connected with a test load, and a controller for test is connected with the discharge circuits and the tested power unit. By adopting the power unit testing circuit provided by the invention, a temperature rise test of the tested power unit and an on-off test of a single-IGCT device and a bridge arm are realized, and the power unit testing circuit provided by the invention has the characteristics of simple test circuit, low total capacity, low energy consumption, no pollution to a power grid, convenience in operation and the like.

The present invention discloses an integrated gate commutated thyristor. The said gate commutated thyristor includes n-type substrate, p-type doped region, n-type doped region, anodic p+ doped region of the gate commutated thyristor, diode n+ buffer region, and cathode paling of gate commutated thyristor, and also includes cathode and gate of the gate commutated thyristor, anode of the diode, anode of the gate commutated thyristor and cathode of the diode. The present invention has characters: n+-type isolating ring is set between the p-type doped regions of the gate of the gate commutated thyristor and the anode of the diode. The integrated gate commutated thyristor and its processing method can achieve effectively isolation between GCT element and the diode.

The invention relates to IGCT (Integrated Gate Commutated Thyristor) frequency testing method and device. The frequency test of an IGCT is realized by using low-voltage heavy current and adjustable clamping voltage to simulate the work condition of the IGCT through a group of low-voltage heavy-current phase control rectification circuits, a group of reactors, a capacitor and a clamping circuit ofa tested device, wherein each low-voltage heavy-current phase control rectification circuit comprises a thyristor and a rectifying tube; and the reactors are used for improving harmonic waves and current surge. When the tested device is turned on, voltage on main capacitor forms a loop by an inductor, the adjustable reactors and the tested device, current flows through the loop to change output voltage or the conduction time and the dutyfactor of the tested device, and namely that the conduction current of the tested device can be adjusted. When the tested device is turned off, the reactors follow current by a diode, the inductor forms a loop by a clamping diode and a clamping capacitor, the inductor generates voltage on the tested device at the same time, the voltage is influenced by thevoltage of the champing capacitor, and the turn-off voltage environment of the tested device can be changed by changing the voltage value of the clamping capacitor.

The invention discloses a direct current side circuit of an IGCT (integrated gate commutated thyristor) converter/test circuit and a method for designing parameters of a clamp capacitor and a clamp resistor of the direct current side circuit. The direct current side circuit comprises a DC capacitor, a buffer inductor, a clamp diode, the clamp capacitor and the clamp resistor, wherein a positive electrode of the DC capacitor is connected with one end of the buffer inductor and one end of the clamp resistor, the other end of the buffer inductor is connected with a positive electrode of the clamp diode, the other end of the clamp resistor is connected with a negative electrode of the clamp diode, the negative electrode of the clamp diode is connected with one end of the clamp capacitor, and the other end of the clamp capacitor is connected with a negative electrode of the DC capacitor. The direct current side circuit disclosed by the invention is based on circuit principles, analyzes various states in the overall buffering and the working process of a clamp circuit in detail, derives the method for designing the parameters of the clamp capacitor and the clamp resistor according to differential expressions of various working states, thereby being more complete in theory, wider in application range and more accurate in parameter.

The invention relates to an overcurrent electronic protection module for a high-voltage integrated gate commutated thyristor (IGCT) and a short-circuit current protection method, in particular to an electric electronic module for protecting an IGCT apparatus in a voltage source medium-voltage high-power frequency converter. The overcurrent electronic protection module for the high-voltage ICGT comprises a fixing bracket, wherein electronic components, namely, a high-voltage high-power switch module, an overcurrent detection module, a high-frequency overvoltage sampling module, a light driving module and a power supply module are arranged on the fixing bracket. The short-circuit current protection method for the overcurrent electronic protection module for the high-voltage ICGT comprises the following steps of: starting; and operating a high-power switch tube, the high-frequency overvoltage sampling module, the light driving module and the like according to a procedure. The protection module has the advantages of wide protection range, high response speed, reliable breaking, small size, light weight, convenient installation and maintenance and the like.

The invention relates to an integrated gate commutated thyristor based high-power pumped storage unit starting system, and relates to the technical field of pumped storage units. The technical problems that the system structure is simplified, the harmonic content and reactive impact are reduced, and the efficiency is improved are solved. The system comprises a power grid, a synchronous motor, a static frequency conversion device, an excitation device and an on-grid switch, wherein the static frequency converter device comprises a filter, a step-up transformer, three frequency-converison-side thyristor power units and three step-down transformers, and the excitation device comprises an excitation-side transformer and an excitation-side thyristor power unit; and the armature winding of the synchronous motor is connected with the power grid through the on-grid switch, and is sequentially connected to the power grid through the static frequency converter device, a grid-side vacuum switch and a power-grid side mutual inductor, and the excitation winding of the synchronous motor is sequentially connected to the power grid through the excitation device, an excitation-side vacuum switch and an excitation-side mutual inductor. The system provided by the invention has good a torque characteristic, and can improve the on-grid success rate of the unit.

The invention discloses a circulation cooling pipeline of a three-level power module of an integrated gate commutated thyristor; a plurality of radiator circulation cooling pipelines are formed by connecting a capillary hose with a water-supply header, a backwater header and a square water-cooling radiator; and the capillary hose is further connected with the water-supply header, the backwater header, a water-cooling reactor of the three-level power module of the integrated gate commutated thyristor and a water-cooling resistor to form a plurality of impedance circulation cooling pipelines. The circulating water flows through the square water-cooling radiator, water-cooling resistor and water-cooling reactor in a power module unit so as to cool a main power heating power electronic devicein the power module, the radiating efficiency is greatly improved, thereby effectively protecting the power electronic device and guaranteeing the normal operation of a system; and the water circulating pipeline is simple in structure, material-saving and easy to replace.

The present invention discloses an integrated gate commutated thyristor. The said gate commutated thyristor includes n-type substrate, p-type doped region, n-type doped region, anodic p+ doped region of the gate commutated thyristor, diode n+ buffer region, and cathode paling of gate commutated thyristor, and also includes cathode and gate of the gate commutated thyristor, anode of the diode, anode of the gate commutated thyristor and cathode of the diode. The present invention has characters: n+-type isolating ring is set between the p-type doped regions of the gate of the gate commutated thyristor and the anode of the diode. The integrated gate commutated thyristor and its processing method can achieve effectively isolation between GCT element and the diode.

The invention relates to a gate commutated thyristor chip applied to hybrid direct-current circuit breakers, and belongs to the technical field of semiconductor integrated chips. The gate commutated thyristor chip comprises a cathode metal electrode, gate metal electrodes and an anode metal electrode. A cathode, gates and an anode are connected with external driving circuits by the metal electrodes; a cathode plane of the chip comprises a plurality of concentric cathode rings, a concentric gate contact ring and a plurality of cathode combs; p-type base regions of cells of the combs on the same cathode ring have identical depths, and the depths of p-type base regions of cells on the combs on the different cathode rings can be adjusted according to the distances from the cathode rings to the gate contact ring; the depths of p-type base regions of cells of the combs on the cathode rings are increased along with increase of the distance from the cathode rings to the gate contact ring. The sums of the depths of the p-type base regions of the cells of the combs on the different cathode rings and the depths of n-type base regions are identical to one another. The gate commutated thyristor chip has the advantages that the problem of unbalanced commutation time due to existing unbalanced inductance distribution can be solved by the aid of the chip, and the current turn-off ability of each large-diameter IGCT (integrated gate commutated thyristor) can be improved.

The invention relates to a preparation method of a fast recovery diode matched with an integrated gate commutated thyristor in use. The preparation method comprises the steps of: 1) polishing an arbitrary surface of an N type silicon wafer; 2) carrying out aluminum pre-deposition, performing boron ion implantation on the polished surface of the silicon wafer, and carrying out oxidation propelling technology, so that a P+PNP type longitudinal structure is formed in the silicon wafer; 3) grinding the unpolished surface of the silicon wafer, so that a P+PN type longitudinal structure is formed in the silicon wafer; 4) conducting phosphorus impurity doping diffusion on an N type side of the silicon wafer, so that a P+PNN+ type longitudinal structure is formed in the silicon wafer; 5) evaporating an aluminum layer on the surface of the silicon wafer to form an extraction electrode, and carrying out an alloying process to form ohmic contact between aluminum and silicon; 6) carrying out proton irradiation on a chip anode surface; 7) bonding the chip anode surface with a molybdenum plate; 8) performing molding and protection processing; 9) and carrying out electron irradiation.

The invention discloses a secondary alternating-current resonance elimination device used for an electromagnetic type voltage transformer. The device comprises a fully-controlled switch unit (1) and a discharging resistor (2), and the fully-controlled switch unit (1) and the discharging resistor (2) are connected with the two ends of an open delta winding (3) of the electromagnetic type voltage transformer after being connected in series to form a circuit; the fully-controlled switch unit (1) is composed of two fully-controlled switch devices reversely connected in parallel; each fully-controlled switch device is one of an insulated gate bipolar transistor (IGBT), an integrated gate commutated thyristor (IGCT) and a gate turn-off thyristor (GTO). The secondary alternating-current resonance elimination device is simple in structure, can quickly and effectively suppress ferromagnetic resonance overvoltage generated by the electromagnetic type voltage transformer and does not influence normal and asymmetric operation modes of a system, and accordingly safety and stability of power system operation are effectively improved.

The invention relates to an IGCT semiconductor switching device based short-circuit current limit method. The method includes the steps of (1), environmental classification of short-circuit current occurrence; (2), short-circuit current contrast of an infinite power system and a limited power system; (3), construction of an IGCT short-circuit current based current limiting topology circuit; (4), specifically identifying of a current limiting process; (5), completely disconnecting of a circuit in short-circuit fault through a circuit breaker after the current limiting of the short-circuit current, and fault repair. The IGCT semiconductor switching device based short-circuit current limit method can provide protection faster than that of mechanical switches and faster re-starting, is high in working reliability and long in service life, and effectively limits the short-circuit current so as to solve the problem of excessive short-circuit capacity of an electricity system and reduce the short-circuit current design capacity standard of electrical equipment such as transformers and circuit breakers in a power grid, thereby bringing great economic benefits.

The invention discloses a secondary direct-current resonance elimination device used for an electromagnetic type voltage transformer. The device comprises a rectifier circuit, a fully-controlled switch device and a discharging resistor. The alternating-current side connection end of the rectifier circuit is connected with the connection end of an open delta winding of the electromagnetic type voltage transformer, and the direct-current side connection end of the rectifier circuit, the fully-controlled switch device and the discharging resistor are connected in series to form a circuit; the fully-controlled switch device is one of an insulated gate bipolar transistor (IGBT), an integrated gate commutated thyristor (IGCT) and a gate turn-off thyristor (GTO); the rectifier circuit is a single-phase uncontrolled rectifier bridge composed of four rectifier diodes. The secondary direct-current resonance elimination device can quickly and effectively suppress ferromagnetic resonance overvoltage generated by the electromagnetic type voltage transformer and does not influence normal and asymmetric operation modes of a system, and accordingly safety and stability of power system operation are effectively improved and the structure is simple.

The invention relates to a micro power grid and large power grid high-voltage intelligent flexible transmission serial connection compensation device and a control method thereof. The device and the method mainly aim to solve the technical problems of unified tide and poor low-voltage through and bearing capability of an existing parallel connection compensation control device. The technical scheme of the invention is that the micro power grid and large power grid high-voltage intelligent flexible transmission serial connection compensation device comprises a micro power grid side hybrid active power dynamic filter circuit, a micro power grid side parameter detection circuit, an integrated gate commutated thyristor (IGCT) five-level switch topology circuit, an IGCT switch driving circuit, an intelligent flexible transmission serial connection compensation device digital signal processor (DSP) control circuit and the like, wherein a serial connection compensation capacitor circuit of a two-way thyristor switch control on a micro power grid side and a large power grid side is also arranged. The control method comprises the following steps that active power adjusting control quantity Delta P(t)=Delta Ps(t)-Delta Pr(t) and reactive power adjusting control quantity Delta Q(t)=Delta Qs(t)-Delta Qr(t) are formed according to the parameter information which is detected and obtained from the micro power grid side and the large power grid side, so that the control to flexible active power Ps(t) and flexible reactive power Qs(t) is realized.

The invention discloses a reverse conducting integrated gate commutated thyristor, which comprises a GCT (Gate Commuted Tryristor), an FRD (Fast Recovery Diode), and an isolation region between the GCT and the FRD, wherein the GCT comprises a cathode N+ doped region of the GCT, a P-type base region of the GCT, an N-substrate, an N' Buffer layer, and a P+ anode region of the GCT successively from top to bottom in the longitudinal direction; the FRD comprises a P-type base region of the FRD, the N-substrate, the N' buffer layer, and an N+ cathode region of the FRD successively from top to bottom in the longitudinal direction; the N' buffer layer is an N' buffer layer shared by the GCT and the FRD; and the upper surface of the isolation region is lightly doped with a layer of N' impurity, and the doping concentration of the N' impurity is 1-2 orders of magnitudes higher than that of the N-substrate. According to the invention, using the compensating effect of the impurity, under the condition that the P-type doping distribution of the isolation region is not changed, the effective width of the isolation region is increased, and the shortcomings existing in the prior art that the diffusion control precision is not high, and the process is complicated and not suitable for high pressure devices are overcome.

The invention discloses an insulation method and device for an IGCT (integrated gate commutated thyristor) transformer. An epoxy plate is inserted between a primary side and a secondary side of the IGCT transformer to be used as an insulated isolation layer, and the IGCT transformer and a PCB (printed circuit board) are placed into a plastic housing, and sealed with insulation glue and solidified. Four input pins are arranged on the housing, and four output pins are arranged below the housing, and connection pins are respectively embedded into the housing due to relatively large voltage and current, so that the connection pins can be isolated from each other; and pins of the transformer are sealed with the insulation glue after being welded on insertion pieces of the housing, so that the housing can be well used for bridging, each of elements and components can be fixed, and shockproof, dustproof and waterproof effects can be achieved.

The invention discloses a positioning structure for positioning an integrated gate commutated thyristor and a radiator in an integrated gate commutated thyristor phase module. The positioning structure comprises a positioning structure body, the positioning structure body comprises a first positioning side and a second positioning side, the positioning structure body is provided with body positioning claws at two ends of the first positioning side, a radiator connector is located in the middle of the first positioning side, the positioning structure body is provided with first positioning parts at two ends of the second positioning side, a guiding part is located between the first positioning parts at the two ends of the positioning structure body, the guiding part penetrates through the first positioning side and the second positioning side, the integrated gate commutated thyristor is guided and inserted into the positioning structure from the second positioning side via the guiding part, and the integrated gate commutated thyristor is provided with second positioning parts clamped with the first positioning parts. The positioning structure integrates self positioning, positioning of the integrated gate commutated thyristor and positioning of the radiator into a whole, thereby simplifying the positioning process of the IGCT and reducing the positioning accumulative errors of top devices.

An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate zcircuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGR_MAX) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGR_MAX) due to the stray impedance of the gate circuit.

The invention consists of clamping resistor, clamping reactor, insulation board of laminated bus bar, power input terminal, clamping capacitor, IGCT, radiator, connector of laminated bus bar, laminated bus bar, power output terminal and pressing components. The pressing component presses the IGCT and radiator into a long string. The clamping resistor locates at the both sides of the front end of the long string. The clamping reactor locates at upper part of the long string. The insulation board of laminated bus bar and laminate bus bar cling to back end of the long string. The radiator is connected with the laminated bus bar. The clamping capacitor is clamped between the power input end and laminated bus bar.