4 results about "Current decay" patented technology

The invention relates to a super-junction MOSFET device, and the device comprises a first column structure and a second column structure which are located at the same side of a substrate and are sequentially arranged in the same direction parallel to the surface of the substrate; the opposite surfaces of the first column structure and the second column structure are in contact, and the doping types of the first column structure and the second column structure are different; the island structures and the first column structures are located on the same side of the substrate, and the island structures are located on the sides, away from the second column structures, of the first column structures; the island structures are sequentially arranged in the direction perpendicular to the surface of the substrate, the opposite surfaces of every two adjacent island structures make contact with each other, and the doping types of every two adjacent island structures are different; wherein the island structure is in contact with opposite surfaces of the first pillar structure; a well structure; a gate polysilicon layer; due to two times of recovery of the hole, the current decay time is prolonged, soft recovery is realized, and EMI oscillation is inhibited.

The present application belongs to the technical field of power electronic component manufacturing, and particularly relates to a pole-mounted circuit breaker overcurrent protection control method and system. The method comprises: collecting line current instantaneous value and constructing an analysis window; calculating waveform polarity index based on positive and negative half-wave current integration and duration difference to identify the asymmetric characteristics of magnetizing inrush current; combining current decay intensity and second-order difference value to calculate transient fluctuation reliability to distinguish cold load start-up and fault arc characteristics; using waveform polarity index and transient fluctuation reliability to construct comprehensive confidence weight, and then calculating fault degree; and only when the average value of fault degree in the analysis window exceeds the preset threshold, overcurrent protection is executed. The present application solves the problem that traditional protection cannot distinguish between non-fault transient impact and real fault, and realizes reliable locking under large current interference and precise action under real fault.

The invention discloses a critical current attenuation evaluation method and device of a superconducting cable, terminal equipment and a storage medium, and belongs to the technical field of superconducting cables. The method comprises the steps that winding parameters of each layer of superconducting tape in the superconducting cable are acquired; according to the winding parameters, performing stress analysis on each layer of superconducting tape, and determining the maximum main strain data of each layer of superconducting tape in the current spiral winding state; determining the actual critical current ratio of each layer of superconducting tape according to the maximum main strain data; and calculating the current attenuation value of the superconducting cable according to the actual critical current ratio and the theoretical rated current of the superconducting cable. Therefore, by implementing the application, the problem that the current attenuation evaluation result of the superconducting cable is inaccurate in the prior art can be solved.