Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet

Abstract

The invention provides a dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet, belonging to the technical field of large power semiconductor switches. The power cabinet provided by the invention comprises an inverted power unit cabinet, a capacitor cabinet and a rectified power unit cabinet, wherein each inverted or rectified power unit cabinet in the invention comprises three groups of inverted / rectified power module units; each group of the inverted / rectified power module units are provided with more than four IGCT (integrated gate commutated thyristor) elements to constitute one phase of inverted / rectified output; and the capacitor cabinet is provided with auxiliary circuits such as a direct current capacitor, a water supplying / returning vertical main pipe, a capacitor precharging circuit, parallel resistors, an anti-parallel diode and the like, as well as corresponding bus bars and the like.

Description

A dual-PWM integrated gate-commutated thyristor three-level power cabinet technical field The invention belongs to the technical field of semiconductor switches, and in particular provides a dual-PWM integrated gate commutated thyristor (The Integrated Gate Commutated Thyristor, referred to as IGCT) three-level power cabinet structure, which is suitable for 3-27MVA high-power converters and can be widely used It is used in the field of medium voltage transmission. Background technique The integrated gate commutated thyristor IGCT is a power semiconductor switching device specially developed by Swiss ABB company for medium-voltage inverters. It is an improved device based on the turn-off thyristor GTO. As a new type of power electronic device, it integrates the GTO chip with the anti-parallel diode and the gate drive circuit, and then connects the gate drive to the periphery. The low-inductance connection combines the advantages of both transistors and thyristors, that is,...

AI Technical Summary

Problems solved by technology

At present, the application technology of IGCT is very mature in the world, but it is still in its infancy in China, and there is no mature product of IGCT converter.

A complete IGCT active rectifier circuit or inverter circuit includes IGCT, anti-parallel diodes, clamping circuit devices, etc. If these components are dispersed and assembled and then electrically connected with busbars or wires, not only does it occupy a large volume, but also the wiring The loop area is larger, resulting in an increase in the stray inductance of the line

The increase of stray inductance will increase the turn-off voltage of IGCT. At this time, in order to ensure the safety of IGCT, the output current must be reduced, resulting in a decrease in output power.

In addition, the scattered installation of the power components of the IGCT is not conducive to the maintenance work

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