Reverse conducting integrated gate commutated thyristor

Abstract

The invention discloses a reverse conducting integrated gate commutated thyristor, which comprises a GCT (Gate Commuted Tryristor), an FRD (Fast Recovery Diode), and an isolation region between the GCT and the FRD, wherein the GCT comprises a cathode N+ doped region of the GCT, a P-type base region of the GCT, an N-substrate, an N' Buffer layer, and a P+ anode region of the GCT successively from top to bottom in the longitudinal direction; the FRD comprises a P-type base region of the FRD, the N-substrate, the N' buffer layer, and an N+ cathode region of the FRD successively from top to bottom in the longitudinal direction; the N' buffer layer is an N' buffer layer shared by the GCT and the FRD; and the upper surface of the isolation region is lightly doped with a layer of N' impurity, and the doping concentration of the N' impurity is 1-2 orders of magnitudes higher than that of the N-substrate. According to the invention, using the compensating effect of the impurity, under the condition that the P-type doping distribution of the isolation region is not changed, the effective width of the isolation region is increased, and the shortcomings existing in the prior art that the diffusion control precision is not high, and the process is complicated and not suitable for high pressure devices are overcome.

Description

technical field [0001] The invention relates to a structure of a power semiconductor switching device, in particular to a structure of a reverse conducting integrated gate commutated thyristor (RCGCT, Reverse Conducting Integrated Gate Commutated Thyristor). Background technique [0002] Reverse Conducting Integrated Gate Commutated Thyristor (Reverse Conducting Integrated Gate Commutated Thyristor, RCGCT) is a chip that integrates GCT (Gate Commutated Thyristor, gate commutated thyristor) and FRD (Fast Recovery Diode, fast recovery diode) ) of power electronic devices. Among them, GCT is a power electronic switching device, and its typical working states are conduction state, blocking state, and the turn-on process and turn-off process of state transition. The electrodes are gate (Gate, control pole), anode (Anode) and cathode (Cathode). GCTs are mainly used as switching elements in power electronic devices. The typical structure of FRD is a PIN structure, and the electr...

AI Technical Summary

Problems solved by technology

[0020] The purpose of the present invention is to provide a reverse conduction integrated gate commutated thyristor to overcome the disadvantages of the prior art that the reverse conduction integrated gate commutated thyristor has low diffusion control accuracy, complex process and is not suitable for high voltage devices

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