The invention discloses a reverse conducting integrated gate commutated thyristor, which comprises a GCT (Gate Commuted Tryristor), an FRD (Fast Recovery Diode), and an isolation region between the GCT and the FRD, wherein the GCT comprises a cathode N+ doped region of the GCT, a P-type base region of the GCT, an N-substrate, an N' Buffer layer, and a P+ anode region of the GCT successively from top to bottom in the longitudinal direction; the FRD comprises a P-type base region of the FRD, the N-substrate, the N' buffer layer, and an N+ cathode region of the FRD successively from top to bottom in the longitudinal direction; the N' buffer layer is an N' buffer layer shared by the GCT and the FRD; and the upper surface of the isolation region is lightly doped with a layer of N' impurity, and the doping concentration of the N' impurity is 1-2 orders of magnitudes higher than that of the N-substrate. According to the invention, using the compensating effect of the impurity, under the condition that the P-type doping distribution of the isolation region is not changed, the effective width of the isolation region is increased, and the shortcomings existing in the prior art that the diffusion control precision is not high, and the process is complicated and not suitable for high pressure devices are overcome.