Semiconductor device power module

Abstract

The invention provides a semiconductor device power module and belongs to the technical field of semiconductors. The power module comprises supporting structures which are arranged on the two sides and are used for fixing the power module, and a power component which is arranged between the supporting structures and extends along the longitudinal direction. The power component comprises a plurality of semiconductor devices which are press-fit through a press fitting mechanism. Each semiconductor device comprises an IGCT (Integrated Gate Commutated Thyristor), a clamping absorber diode, a neutral-point-clamped diode and a freewheel diode. The semiconductor device power module provided by the invention has the advantages that the electrical performance is excellent, the potential of an IGCT device is fully realized, the structure is compact, the stray inductance is small, the heat dissipation capability is strong, the power module is easy to maintain and the like.

Description

technical field [0001] The invention relates to a semiconductor device power module, which is especially suitable for a three-level integrated gate commutated thyristor (IGCT) converter. Background technique [0002] With the rapid development of semiconductor device technology, high-power fully-controlled devices represented by insulated gate bipolar transistors (IGBTs), power metal oxide semiconductor field effect transistors (Power MOSFETs), and integrated gate commutated thyristors (IGCTs) have been obtained. Rapid development. [0003] The integrated gate commutated thyristor (IGCT) is a high-efficiency and high-reliability power semiconductor device, which is developed from the gate-turn-off (GTO) technology. ) thyristor, and it is a transistor when it is turned off. It has the advantages of fast switching speed, low switching loss, low thyristor conduction loss, high blocking voltage, and large output current, so it integrates insulated gate bipolar transistors (IGBT...

AI Technical Summary

Problems solved by technology

[0006] In a three-level circuit, the number of components is relatively large. If the related components are scattered and assembled and then connected by busbars, it will not only increase the volume of the circuit structure engineering, but also increase the stray inductance of the line.

The integrated gate commutated thyristor (IGCT) device has strict requirements on the distribution of stray inductance in the circuit connection, and the increase of stray inductance means that the ability of the integrated gate commutated thyristor (IGCT) device cannot be fully utilized

In addition, if the integrated gate commutated thyristor (IGCT) power components are installed separately, it is not conducive to future maintenance work

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