Water-cooled reactor for converting of integrated gate commutated thyristor

Abstract

The invention relates to one integration witch transistor water cooling reactor in semi-conductor technique, which comprises the following parts: one hollow abnormal copper tube, mother line, water hole and shell, wherein, the tube is processed into one round shape with spiral rolling into one round ring reactor; two water holes are welded onto the two end holes as reactor entrance and exit holes; two mother lines are parallel to the two ends of the hollow copper tube; the spiral hollow tubes are cast into shell.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides an integrated gate commutated thyristor (The Integrated Gate Commutated Thyristor, referred to as IGCT) commutation water-cooled reactor, which is suitable for a clamping reactor in an IGCT power phase module. Background technique [0002] The integrated gate-commutated thyristor IGCT is a power semiconductor switching device specially developed by Swiss ABB for medium-voltage inverters. A complete IGCT active rectifier circuit or inverter circuit includes IGCT, anti-parallel diodes, clamp circuit devices, etc. If these components are dispersed and assembled and then electrically connected with bus bars or wires, not only will they occupy a larger volume, but also connect The loop area is large, resulting in increased line inductance. The increase of stray inductance will increase the turn-off voltage of IGCT. The clamping circuit and the IGCT press-fit power ...

AI Technical Summary

Problems solved by technology

The di / dt of the IGCT element has a certain limit when it is turned on. When the di / dt is too large, it may cause damage to the IGCT element

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