The invention relates to an ion beam polishing process parameter determination method for a six-axis motion polishing system. The ion beam polishing process parameter determination method for the six-axis motion polishing system is based on an Sigmund sputtering theory, faraday scanning experiments with a limited number of times are used to determine the valves of a scaling factor and a constant C, so that an expression, of relative parameters, relative to a faraday scanning current density distribution curve, of the peak removal rate R<max>of a removal function and the full width at half maximum HR of the removal function is obtained, thus process parameters are adjusted, the faraday scanning current density distribution curve is obtained through the faraday scanning experiments, the parameters of the curve are used, thus the removal function can be obtained by calculating, and time of removal function determination is greatly shortened from two hours to five minutes. Therefore, the efficiency of simulated machining tests aiming at the different process parameters is improved, thus the optimum process parameter can be quickly determined. Furthermore, when the method is used for determining the removal function, etching experiments are not needed to conduct on all process parameters, so that waste of sample pieces is avoided, and the cost is saved.