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Phase module for three-level integrated gate-commutated thyristor frequency converter

A commutated thyristor and integrated gate technology, which is applied in the field of three-level integrated gate commutated thyristor inverter phase modules, can solve the problem of reducing the output power of the inverter, and achieves reduced wiring distance, convenient operation, and reduced power consumption. Effect of small stray inductance

Active Publication Date: 2011-05-04
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, reducing the output current will directly lead to a reduction in the output power of the inverter

Method used

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  • Phase module for three-level integrated gate-commutated thyristor frequency converter
  • Phase module for three-level integrated gate-commutated thyristor frequency converter
  • Phase module for three-level integrated gate-commutated thyristor frequency converter

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Embodiment Construction

[0023] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0024] First of all, in order for those skilled in the art to better understand and implement the present invention, the following in conjunction with the attached figure 1 Introduce the circuit diagram of the phase module of the next three-level IGCT inverter.

[0025] see figure 1 , which is a circuit diagram of the phase module of the three-level IGCT inverter of the present invention.

[0026] It should be noted, figure 1 The circuit shown is only a circuit diagram of one of the three phases of the inverter rectification or inverter circuit.

[0027] from figure 1 As can be seen in , each phase module includes four identical IGCTs, namely V1, V2, V3 and V4. Each IGCT is connected in parallel with a freewheeling diode, so there...

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Abstract

The invention provides a phase module for a three-level integrated gate-commutated thyristor frequency converter, comprising the structure that two strings of same eudipleural crimping devices are arranged in a framework, wherein each string of crimping devices are same and comprise six heat radiators; a first integrated gate-commutated thyristor (IGCT), a first free-wheeling diode, a second free-wheeling diode, a second IGCT and a clamping diode are sequentially connected among the six heat radiators; same devices on two sides of absorbing circuits at the rear parts of the two strings of crimping devices are symmetrically arranged; a clamping capacitor and an absorbing resistor which are vertically arranged are arranged on each side of the absorbing circuits; absorbing diodes are horizontally arranged above the clamping capacitor and the absorbing resistor; and conductive bus bars are respectively arranged on two sides of the framework and are eudipleural with respect to the framework. By using the phase module, the devices of the frequency converters are divided into two same strings, are eudipleural and are vertically distributed in the framework, so that the connecting line distance among various devices can be reduced. In addition, the line outlet positions are eudipleural, thus the stray inductance of the whole circuit can be greatly reduced.

Description

technical field [0001] The invention relates to the technical field of power electronic equipment, in particular to a three-level integrated gate commutation thyristor inverter phase module. Background technique [0002] With the rapid development of power electronics technology and computer control technology, AC speed regulation has gradually replaced DC speed regulation. Compared with traditional DC speed regulation systems, AC speed regulation has many advantages, such as energy saving, environmental protection, etc., and can achieve large Range of high-efficiency continuous speed control. Especially in recent years, with the rapid development of semiconductor technology, especially insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor), power MOS field effect transistor (Power MOSFET) and integrated gate commutated thyristor (IGCT, Integrated Gate Commutated Thyristor) represents the rapid development of high-power full-control devices. The medium ...

Claims

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Application Information

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IPC IPC(8): H02M7/48H05K7/20
Inventor 李彦涌杨进峰胡家喜孙保涛唐林宋娇姚磊刘旭君
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD
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