Commutating crystal brake tube power-phase module of integrated gate pole

Abstract

The invention consists of clamping resistor, clamping reactor, insulation board of laminated bus bar, power input terminal, clamping capacitor, IGCT, radiator, connector of laminated bus bar, laminated bus bar, power output terminal and pressing components. The pressing component presses the IGCT and radiator into a long string. The clamping resistor locates at the both sides of the front end of the long string. The clamping reactor locates at upper part of the long string. The insulation board of laminated bus bar and laminate bus bar cling to back end of the long string. The radiator is connected with the laminated bus bar. The clamping capacitor is clamped between the power input end and laminated bus bar.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides an integrated gate commutated thyristor (i.e. IGCT) power phase module, which is suitable for 3-27MVA high-power converters, and the IGCT power phase module is combined in Together, a high-power active rectifier or inverter can be formed, which is widely used in the field of medium-voltage transmission. Background technique [0002] The integrated gate commutated thyristor IGCT is a power semiconductor switching device specially developed by Swiss ABB company for medium-voltage inverters. IGCT is based on the very mature GTO (Gate Turn Off Thyristor) technology, which fundamentally reduces the complexity of the design of the frequency converter and improves the efficiency and reliability. The IGCT combines the high-speed switching characteristics of an IGBT (Insulated Gate Bipolar Transistor) with the high blocking voltage and low conduction loss charact...

AI Technical Summary

Problems solved by technology

At present, the application technology of IGCT is very mature in the world, but it is still in its infancy in China, and there is no mature product of IGCT converter.

A complete IGCT active rectifier circuit or inverter circuit includes IGCT, anti-parallel diodes, clamping circuit devices, etc. If these components are dispersed and assembled and then electrically connected with busbars or wires, not only does it occupy a large volume, but also the connection The area of ​​the line loop is large, which will increase the stray inductance of the line

The increase of stray inductance will increase the turn-off voltage of IGCT. At this time, in order to ensure the safety of IGCT, the output current must be reduced, resulting in a decrease in output power.

In addition, the scattered installation of IGCT power components is not conducive to maintenance work

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