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Commutating crystal brake tube power-phase module of impacted integrated gate pole

A commutating thyristor, a compact technology, applied in the direction of output power conversion devices, electrical components, electric solid devices, etc., can solve the problems of increased line stray inductance, reduced output power, and large connection loop area. Achieve the effects of increasing power density, reducing occupied volume, and improving work efficiency

Inactive Publication Date: 2007-11-14
AUTOMATION RES & DESIGN INST OF METALLURGICAL IND +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the application technology of IGCT is very mature in the world, but it is still in its infancy in China, and there is no mature product of IGCT converter.
A complete IGCT active rectifier circuit or inverter circuit includes IGCT, anti-parallel diodes, clamping circuit devices, etc. If these components are dispersed and assembled and then electrically connected with busbars or wires, not only does it occupy a large volume, but also the connection The area of ​​the line loop is large, resulting in an increase in the stray inductance of the line
The increase of stray inductance will increase the turn-off voltage of IGCT. At this time, in order to ensure the safety of IGCT, the output current must be reduced, resulting in a decrease in output power.
In addition, the scattered installation of IGCT power components is not conducive to maintenance work

Method used

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  • Commutating crystal brake tube power-phase module of impacted integrated gate pole

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Embodiment Construction

[0010] Figure 1 and Figure 2 are a specific embodiment of the present invention. Wherein, there are altogether six connecting bus bars 10 between strings, and the connecting bus bars are in the shape of a straight plate. During assembly, the inter-string stacked bus bar 10 is tightly attached to the end face of semiconductor devices such as IGCT1 and diode 9 and the end face of the radiator 6 and pressed tightly, thereby realizing the circuit connection between the three component strings. The inter-string stacked busbars 10 of the IGCT power module are installed symmetrically on the left and right sides.

[0011] In the present invention, the circuit connection between semiconductor devices such as IGCTs and diodes is realized by using inter-series stacked busbars, and the serially connected busbars are close to the power devices, which structurally reduces the loop area of ​​the wiring. The test results prove this design It can effectively reduce the stray inductance of the...

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Abstract

The invention consists of IGCT, clamping resistor, clamping reactor, pressing frame, threaded rod, radiator, clamping capacitor, power connecting terminal, diode, connecting bar and some pressing components. The IGCT, diode and radiate are compressed in series into three series components paralleled each other by using pressing frame, threaded rod and other pressing component. Three series component shares the pressing frame locating at both sides of it, and the claming resistor locates at both sides of the front of three series components. The claming reactor locates at both sides of series component. The clamping capacitor is clamped at the middle of the series components by connecting bar.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a compact integrated gate-commutated thyristor (IGCT) power phase module, which is suitable for 3-27MVA high-power converters. The IGCT power phase module Combined together, a high-power active rectifier or inverter can be formed, which is widely used in the field of medium-voltage transmission. Background technique [0002] The integrated gate commutated thyristor IGCT is a power semiconductor switching device specially developed by Swiss ABB company for medium-voltage inverters. IGCT is based on the very mature GTO (Gate Turn Off Thyristor) technology, which fundamentally reduces the complexity of the design of the frequency converter and improves the efficiency and reliability. The IGCT combines the high-speed switching characteristics of an IGBT (Insulated Gate Bipolar Transistor) with the high blocking voltage and low conduction loss characteristics...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/00H02M1/06H01L23/34H01L23/46
CPCH01L2924/0002H01L2924/00
Inventor 张胜民李崇坚李凯崔春枝李海兴朱春毅林根
Owner AUTOMATION RES & DESIGN INST OF METALLURGICAL IND
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