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Medium power and low voltage frequency converter based on insulation grating bipolar transistor

A bipolar transistor and frequency converter technology, applied in the direction of converting AC power input to AC power output, AC power input converting to DC power output, and output power conversion devices, etc., can solve problems such as complex working principles and achieve volume Small, compact structure, the effect of improving work efficiency

Inactive Publication Date: 2009-03-04
BEIJING ARITIME INTELLIGENT CONTROL +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, IGBT is a complex integrated structure, and its working principle is more complicated. One of its outstanding performances is that its operating frequency can be much higher than that of bipolar transistors.

Method used

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  • Medium power and low voltage frequency converter based on insulation grating bipolar transistor

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Embodiment Construction

[0009] The accompanying drawing is an embodiment of the present invention. Wherein, the laminated busbar 4 includes two layers of connecting busbars, and the two layers of connecting busbars are separated by a laminated busbar insulating plate 5 . The laminated bus bar is covered on the DC capacitor 2, one side is connected to the diode module, and the other side is directly connected to the DC terminal of the IGBT power module 6 and the absorbing capacitor 3 with screws. The output terminals of each IGBT power module are connected in parallel through bus bars.

[0010] In the present invention, the electrical connection between the circuits of each IGBT power device is realized by a laminated busbar, and the laminated busbar is closely attached to the device, which structurally reduces the loop area of ​​the connecting circuit. The test results prove that this design significantly reduces the connecting circuit. The stray inductance increases the output power of the power mo...

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Abstract

This invention relates to a mid-power low voltage frequency converter based on an insulation grid dual polarity transistor including: a mean-voltage resistor, a DC capacitor, an absorption capacitor, a cascade bus, a cascade bus insulation board, an IGBT power module, an input power terminal, a redtifying diode, an output power terminal, a radiator, a fan, a wheel and a current sensor, which is advantaged that the structure is compact, the volume is small, power density is big and easy to be installed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a medium-power low-voltage frequency converter based on an insulated gate bipolar transistor (IGBT), which is suitable for frequency converters with a power of 210-800KVA. The device can be widely used in the field of transmission. Background technique [0002] IGBT is the abbreviation of the English name of the insulated gate transistor (Insulated Gate Bipolar Transistor—IGBT). The original intention of the invention of the IGBT is to simplify the drive circuit of the power device and reduce the drive power consumption. Both transistors and thyristors have matured as power devices in the 1960s. However, the driving power consumption of this kind of bipolar power device is large and the circuit is complicated, which makes the equipment cost high. In the 1970s, the power MOSFET was successfully researched. It is a majority-carrier device controlled by an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/00H02M5/00H02M7/537H05K7/00H05K7/02H05K7/20
Inventor 朱春毅李崇坚赵如凡杨溪林李江路尚书胡培青王鹏葛钢杨琼涛
Owner BEIJING ARITIME INTELLIGENT CONTROL
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