Positioning structure

Abstract

The invention discloses a positioning structure for positioning an integrated gate commutated thyristor and a radiator in an integrated gate commutated thyristor phase module. The positioning structure comprises a positioning structure body, the positioning structure body comprises a first positioning side and a second positioning side, the positioning structure body is provided with body positioning claws at two ends of the first positioning side, a radiator connector is located in the middle of the first positioning side, the positioning structure body is provided with first positioning parts at two ends of the second positioning side, a guiding part is located between the first positioning parts at the two ends of the positioning structure body, the guiding part penetrates through the first positioning side and the second positioning side, the integrated gate commutated thyristor is guided and inserted into the positioning structure from the second positioning side via the guiding part, and the integrated gate commutated thyristor is provided with second positioning parts clamped with the first positioning parts. The positioning structure integrates self positioning, positioning of the integrated gate commutated thyristor and positioning of the radiator into a whole, thereby simplifying the positioning process of the IGCT and reducing the positioning accumulative errors of top devices.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a positioning structure for positioning an integrated gate commutation thyristor and a radiator in an integrated gate commutation thyristor phase module. Background technique [0002] Integrated Gate Commutated Thyristors (Integrated Gate Commutated Thyristors, IGCT) is a power semiconductor device with high efficiency and high reliability, which is developed from Gate Turn-off Thyristors (GTO). IGCT is a gate turn-off thyristor (GTO) when it is turned on, and a transistor when it is turned off. It has fast switching speed of transistor, low switching loss and low conduction loss of thyristor, high blocking voltage and large output current Therefore, it integrates the high-speed switching characteristics of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) and the high blocking voltage and low conduction loss characteristics of a GTO. [00...

AI Technical Summary

Problems solved by technology

The currently commonly used positioning method of IGCT10 is to locate on the lower radiator 26 through the cooperation of the GCT center hole 111 and the positioning pin, so as to locate layer by layer. figure 2 In the long string press-fitting structure shown, the positioning method of positioning pins makes the top layer IGCT have a large positioning accumulation error, and the cooperation between the center hole 111 of the GCT and the positioning pins is completed under manual operation. Base

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