Three-level traction power module based on SiC power device and inverter circuit

Abstract

The present invention relates to a three-level traction power module based on a SiC power device and an inverter circuit. An I-type three-level inverter bridge structure is adopted in an inverter maincircuit. The traction power module is successively integrated with a controller, a support capacitor module, a stack-layer bus-bar, a drive module, a SiC power module and a heat-dissipation piece from top to bottom. SiC-MOSFET(s) and SiC-DIODE power device(s) are adopted in the SiC power module. The drive module is connected with the SiC power module, and the controller is connected with the drive module to control the on-off state of the SiC power module. The support capacitor module is connected with the SiC power module, and the SiC power module is fixedly connected with the heat-dissipation piece. According to the module, the integrated and systematic design is adopted in the traction power module, the volume and the weight of the module are effectively reduced by using the high-frequency and high-temperature characteristics of the SiC power device, and all aspects of performances of the traction power module are greatly improved compared with the conventional power module based on Si device(s).

Description

technical field [0001] The invention belongs to the technical field of traction inverter, and in particular relates to a three-level traction power module and an inverter circuit based on SiC power devices. Background technique [0002] At present, most high-power inverters use Si-IGBT as the core power device. The switching frequency of traction inverters based on Si power devices is generally below 1kHz. In order to ensure the quality of the three-phase current output by the traction inverter, complex The segmental synchronous modulation control method not only increases the complexity of the system control, but also easily generates a current shock when switching between different modulations, which affects the safety and reliability of the system. At the same time, the Si-IGBT device has a large loss, resulting in a large volume and weight of the inverter heat dissipation system. [0003] Compared with Si-IGBT, SiC power device, as a new type of wide bandgap semiconduct...

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Problems solved by technology

[0002] At present, most high-power inverters use Si-IGBT as the core power device. The switching frequency of traction inverters based on Si power devices is generally below 1kHz. In order to ensure the quality of the three-phase current output by the traction inverter, complex Segmented synchronous modulation control method, which not only increases the complexity of system control, but also easily generates current shock when switching between different modulations, which affects the safety and reliability of the system

At the same time, the Si-IGBT device has a large loss, resulting in a large volume and weight of the inverter cooling system

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