30results about How to "Improved current scaling performance" patented technology

The invention relates to a fast-recovery commutation diode used for high frequency electroplating and a production method thereof, wherein the fast-recovery commutation diode has the high frequency property and is suitable for 30KHz/2-5KA/(200-400)V high frequency electroplating with both high voltage and high current density. An N-type (100) radial single crystal silicon piece, which has specific resistance Rho n of 5-9 Ohm-cm, diameter of 48-70 mm and thickness of 175-185 microns, is adopted; silicon piece diffusion is conducted, and double-surface once diffusion is carried out at temperature of 1250 DEG C; the diffusion piece detection is carried out; phosphorosilicate glass and borosilicate glass are used for absorption, the temperature is slowly lowered from 1250 DEG C to 1050 DEG C, the speed rate is 1 DEG C per minute, and isothermal absorption is carried out for 2-3 h; slow temperature reduction is continued till furnace temperature is reduced to 600 DEG C, then furnace delivery is carried out, and minority carrier lifetime Tao p is caused to reach 12-16 Mu S; platinum diffusion is carried out at low temperature so that the minority carrier lifetime Tao p is controlled to be 4-6 Mu S; 12 Mev electron irradiation is carried out so that the minority carrier lifetime Tao p of a base region is 0.9-1.1 Mu S; the two surfaces of the silicon piece are plated with titanium-nickel-gold by means of vapor deposition and then undergo table-board spray sand molding, desanding, cleaning, corrosion, passivation protection, intermediate test, shell arrangement and packaging, and after tests testify qualification, the finished product is produced.

The invention discloses a large-power vertical structure LED epitaxial structure. The large-power vertical structure LED epitaxial structure includes a pre-paved Al layer, an AlN buffer layer, an AlGaN buffer layer, a u-type GaN layer, a first graphene layer, an n-type GaN layer, a multi-quantum well, a p-type GaN layer, and a second graphene layer, wherein all the above layers and the multi-quantum well are grown on an Si substrate; and the first graphene layer and the second graphene layer are formed by vapor deposition. The large-power vertical structure LED epitaxial structure has better photoelectric performance and has wide application.

The invention provides a growth method for an ultraviolet LED epitaxial structure, specially a special growth process for multiple quantum wells of an active area, and the special growth process comprises the following steps: growing LP and PAL as an integral superlattice, wherein a growth period is 5-20; adopting roof type gradual doping for doping of Mg, i.e., gradually reducing after doping ofMg firstly gradually increases to reach a peak value, wherein doping is in symmetrical distribution. Through the superlattice growth, ionization energy of Mg can be reduced, hole concentration is improved, the impurity scattering effect on the hole is reduced, and more holes are injected into a light-emitting area, so that light emitting efficiency is improved. The method is an effective method capable of improving efficiency of an ultraviolet LED; and meanwhile, an apparatus has very good light emitting efficiency, so that photoelectric property of the apparatus is improved.

The invention discloses a high-voltage light-emitting diode and a manufacturing method thereof. In the structures of the high-voltage light-emitting diode, a transparent insulating layer, a part of atransparent current expanding layer and a transparent conducting layer are arranged between the adjacent light-emitting structures; the transparent insulating layer, the part of the transparent current expanding layer and the transparent conducting layer are all of light-permeable structures, so that the light-emitting areas of the side edges of the light-emitting structures are enlarged, and thelight-emitting efficiency of the high-voltage light-emitting diode is improved; and the transparent conducting layer is in contact with the transparent current expanding layer, and the transparent conducting layer is made of metal, so that the resistance of the transparent current expanding layer can be reduced, the current expanding effect is improved, and the light-emitting efficiency of the high-voltage light-emitting diode is further improved.

The invention provides an LED chip and a manufacturing method thereof. The epitaxial layer structure of the LED chip comprises: an N-type semiconductor layer, an active region, a P-type semiconductorlayer, a high-doped P-type semiconductor layer and a high-doped tunneling layer which are sequentially overlapped on the substrate. The manufacturing method of the LED chip comprises the steps of: firstly, forming a plurality of light-emitting columns in the N electrode manufacturing area of the epitaxial layer structure, so that the light-emitting area of the LED chip is increased; secondly, arranging a first insulating reflecting layer which comprises an insulating layer and a reflecting layer, wherein the reflecting layer is stacked on the surface of the insulating layer, so that the insulating layer is directly in contact with the high-doped tunneling layer, and lattice matching is performed on the high-doped tunneling layer and the insulating layer to form stress transition, thereby improving the combination degree of the first insulating reflecting layer and the epitaxial layer structure; and finally, insulating an N-type electrode extension strip from a light emitting area through the first insulating reflecting layer, so that the electric leakage of the LED chip can be effectively avoided.

The invention discloses a large-sized light-emitting diode. The large-sized light-emitting diode includes a p region, an n region and an active region, wherein the active region is arranged between the p region and the n region, the p region is provided with a first electrode, and the n region is provided with a second electrode. The large-sized light-emitting diode is characterized in that the p region is provided with a composite multilayer ohmic contact layer structure; an ITO electric conduction layer is formed on the composite multilayer ohmic contact layer structure through evaporation; and the first electrode is arranged on the ITO electric conduction layer. According to the large-sized light-emitting diode of the invention, the current expansion effect of the ITO electric conduction layer can be improved, and the light shielding area of the expansion electrodes can be reduced, and therefore, the luminous efficiency of the light-emitting diode can be improved, and manufacturing cost can be reduced.

The invention relates to an avalanche commutation diode special for a 16000A/200-400V welding machine and a preparation method thereof. The invention solves the problems that an avalanche commutation diode special for a single welding machine has small capacity and that parallel connection and flow equalization are needed during the use of the avalanche commutation diode. An N-type (100) radial single crystal silicon piece, which has specific resistance Rho n of 5-10 Ohm-cm, diameter of 70 mm and thickness of 0.17-0.19 mm, is adopted; at the temperature of 1250 DEG C, double-surface once diffusion is carried out; the surface concentration of a surface higher-concentration region of a diffusion region is 0.06-n A, a junction depth X jP is 58-62 microns, and residual minority carrier lifetime Tao p of a base region is 9-13 Mu S; cathode-anode titanium-nickel-gold undergoes ohmic contact; a cathode table surface undergoes spray sand molding, corrosion, cleaning, passivation protection and intermediate test; and a shell is arranged, the thickness of a pipe is 5-6 mm, cold pressure welding packaging is conducted under the protection of nitrogen gas, and the thickness of the pipe is 5-6 mm after the packaging. The avalanche commutation diode has stronger current expansion capability, larger capacity, better quality, higher reliability and lower use cost.

The present invention relates to a LED chip and a preparation method thereof. The method comprises the following steps of: providing a LED chip main body; forming a metal layer on the surface of the chip main body by employing a physical vapor deposition mode; and performing annealing treatment for the chip main body after deposition of the metal layer to obtain a crystalline state metallic oxidethin film. The prepared LED chip comprises a chip main body and a crystalline state metallic oxide thin film protection layer formed on the surface of the chip main body. The crystalline state metallic oxide thin film protection layer can provide better water vapor isolation capability for the LED chip, in the annealing process, part of metal atoms are diffused into a tin indium oxide layer to increase the number of free electrons of the tin indium oxide layer so as to improve the current expansion capability of the current extension layer, reduce the working voltage of the LED chip and improve the photoelectric converting efficiency of the LED chip.

The invention discloses an infrared light-emitting diode with high-reliability electrodes. A roughening layer is arranged on one side of an epitaxial light-emitting structure, a corrosion stop layer is arranged on the roughening layer, an ohmic contact layer is arranged on the corrosion stop layer, extension electrodes are formed on the surface of the ohmic contact layer, a micro roughening layer is arranged on the ohmic contact layer, and a bonding pad electrode is arranged on the micro roughening layer and connected with the extension electrodes; a metal reflector is arranged on the other side of the epitaxial light-emitting structure, a substrate is arranged on the metal reflector, and a back electrode is arranged on the substrate. Reliability of soldering station electrodes is improved effectively, the problem that soldering station electrodes are prone to falling off due to poor adhesion is solved, and the packaging problem that the epitaxial layer under the soldering station electrodes is easy to break up during wire bonding is solved as well.

The invention discloses an LED chip and a manufacturing method thereof. The LED chip includes a substrate, wherein a first semiconductor layer, a active layer, a second semiconductor layer, and a first electrode and a second electrode are sequentially arranged on the substrate; the semiconductor device further comprises an exposed area and n holes, n is larger than or equal to 2, the n holes forma stepped structure, the diameters of the first hole to the nth hole are sequentially decreased progressively, the first electrode is arranged on the exposed first semiconductor layer and extends intothe n holes, and the second electrode is arranged on the second semiconductor layer. According to the invention, the contact area of the first electrode and the first semiconductor layer is increasedthrough the n holes, so that the first electrode and the first semiconductor layer are combined more firmly, the reliability of subsequent packaging and routing is improved, and the current expansioncapability of a chip is improved.