Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof

A technology of rectifier diode and manufacturing method, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of parallel current sharing, small capacity of rectifier diodes, etc., to reduce power consumption, ensure reliability, and improve instantaneous heat dissipation effect of ability

Active Publication Date: 2009-11-18
JINZHOU SHENGHE POWER ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the contradiction that the current rectifier diode dedicated to a single electric welding machine has a small capacity and needs to be connected in parallel for current sharing in the use of the

Method used

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  • Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof
  • Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof
  • Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0027] As shown in the figure, the special avalanche rectifier diode for electric welding machine is composed of a tube shell and a chip 1. The chip 1 includes a base area N and a phosphorous expansion area N. + and boron expansion area P + And cathode and anode titanium-nickel-gold (or titanium-nickel-silver) ohmic contacts 2 and 3, the thickness of the evaporated layer titanium: nickel: gold (or titanium: nickel: silver) is 0.2 μm: 0.5 μm: 0.1 μm, respectively, Tube thickness 5.5±0.5mm. Chip 1 adopts N-type (100) radial low-resistance single-crystal silicon wafer, resistivity ρn is 5-10Ω-cm, diameter is Φ70mm, thickness is 0.18±0.01mm, phosphorus expansion area N + and boron expansion area P + It is formed by two-sided primary diffusion.

[0028] The manufacturing method of this special avalanche rectifier diode for electric welding machine is: adopt N-type (100) radial low-resistance monocrystalline silicon chip 101, described monocrystalline silicon chip 101 diameter is...

Embodiment 2

[0034] As shown in the figure, the special-purpose avalanche rectifier diode for electric welding machine is composed of a tube shell and a chip 1, and the chip 1 includes a base area N, a phosphorous expansion area N+ and a boron expansion area P+, and cathode and anode titanium-nickel-gold ( or titanium-nickel-silver) ohmic contacts 2 and 3, the thickness of titanium: nickel: gold (or titanium: nickel: silver) is respectively: 0.2μm: 0.5μm: 0.1μm, and the thickness of the tube is 5.5±0.5mm. Chip 1 adopts N-type (100) radial low-resistance single crystal silicon wafer, the resistivity ρn is 5-10Ω-cm, the diameter is 70mm, the thickness is 0.18±0.01mm, and the phosphorus expansion area N + and boron expansion area P + It is formed by two-sided primary diffusion.

[0035] The manufacturing method of this special avalanche rectifier diode for electric welding machine is: adopt N-type (100) radial low-resistance monocrystalline silicon chip 101, described monocrystalline silicon...

Embodiment 3

[0041] As shown in the figure, the special avalanche rectifier diode for electric welding machine is composed of a tube shell and a chip 1. The chip 1 includes a base area N and a phosphorous expansion area N. + and boron expansion area P + And cathode and anode titanium-nickel-gold (or titanium-nickel-silver) ohmic contacts 2 and 3, the thickness of titanium: nickel: gold (or titanium: nickel: silver) is 0.2μm: 0.5μm: 0.1μm, the thickness of the tube 5.5±0.5mmmm. Chip 1 is an N-type (100) radial low-resistance monocrystalline silicon wafer with a resistivity ρn of 5-10Ω-cm, a diameter of Φ70mm, and a thickness of 0.18±0.01mm. Phosphorus expansion zone N + and boron expansion area P + It is formed by two-sided primary diffusion.

[0042] The manufacturing method of this special avalanche rectifier diode for electric welding machine is: adopt N-type (100) radial low-resistance monocrystalline silicon chip 101, described monocrystalline silicon chip 101 diameter is 70mm, thi...

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Abstract

The invention relates to an avalanche commutation diode special for a 16000A/200-400V welding machine and a preparation method thereof. The invention solves the problems that an avalanche commutation diode special for a single welding machine has small capacity and that parallel connection and flow equalization are needed during the use of the avalanche commutation diode. An N-type (100) radial single crystal silicon piece, which has specific resistance Rho n of 5-10 Ohm-cm, diameter of 70 mm and thickness of 0.17-0.19 mm, is adopted; at the temperature of 1250 DEG C, double-surface once diffusion is carried out; the surface concentration of a surface higher-concentration region of a diffusion region is 0.06-n A, a junction depth X jP is 58-62 microns, and residual minority carrier lifetime Tao p of a base region is 9-13 Mu S; cathode-anode titanium-nickel-gold undergoes ohmic contact; a cathode table surface undergoes spray sand molding, corrosion, cleaning, passivation protection and intermediate test; and a shell is arranged, the thickness of a pipe is 5-6 mm, cold pressure welding packaging is conducted under the protection of nitrogen gas, and the thickness of the pipe is 5-6 mm after the packaging. The avalanche commutation diode has stronger current expansion capability, larger capacity, better quality, higher reliability and lower use cost.

Description

technical field [0001] The invention relates to a power semiconductor device, in particular to a special avalanche rectifier diode for 16000A / 200-400V electric welding machine and its manufacturing method. Background technique [0002] At present, rectifier diodes for welding machines are mainly Φ63mm / 13500A / 200-400V rectifier diodes produced abroad and Φ48mm / 7000A / 200-400V rectifier diodes produced domestically. Their manufacturing method is to use N-type (111) radial low-resistance single crystal, first perform double-sided diffusion, then grind one side, and then perform single-sided diffusion. As the diameter of the silicon wafer increases, the deformation becomes more and more serious. Not only the diameter of the silicon wafer is too large, but also the thickness cannot be thinner. It is not easy to have a thickness of 63mm, a diameter of 0.21mm, and a capacity of 13500A. Increasing the current capacity will result in low yield. [0003] Since the instantaneous curre...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/04H01L29/06H01L29/16H01L21/22H01L29/45H01L21/329
Inventor 夏吉夫郭永亮潘福泉潘峰
Owner JINZHOU SHENGHE POWER ELECTRONICS
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