The invention relates to a fast-
recovery commutation
diode used for
high frequency electroplating and a production method thereof, wherein the fast-
recovery commutation
diode has the
high frequency property and is suitable for 30KHz / 2-5KA / (200-400)V
high frequency electroplating with both
high voltage and
high current density. An N-type (100) radial
single crystal silicon piece, which has specificresistance Rho n of 5-9
Ohm-cm,
diameter of 48-70 mm and thickness of 175-185 microns, is adopted;
silicon piece
diffusion is conducted, and double-surface once
diffusion is carried out at temperature of 1250 DEG C; the
diffusion piece detection is carried out; phosphorosilicate glass and
borosilicate glass are used for absorption, the temperature is slowly lowered from 1250 DEG C to 1050 DEG C,the speed rate is 1 DEG C per minute, and isothermal absorption is carried out for 2-3 h; slow temperature reduction is continued till
furnace temperature is reduced to 600 DEG C, then furnace delivery is carried out, and minority
carrier lifetime Tao p is caused to reach 12-16 Mu S;
platinum diffusion is carried out at low temperature so that the minority
carrier lifetime Tao p is controlled to be 4-6 Mu S; 12 Mev
electron irradiation is carried out so that the minority
carrier lifetime Tao p of a base region is 0.9-1.1 Mu S; the two surfaces of the
silicon piece are plated with
titanium-
nickel-gold by means of vapor deposition and then undergo table-board spray sand molding, desanding, cleaning,
corrosion,
passivation protection, intermediate test, shell arrangement and packaging, and after tests testify qualification, the finished product is produced.