Cascade circuit based on gate protection and cascade device

A technology for cascading circuits and devices, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of unapplied power devices and insufficient driving ability, and achieve practical value, reduce equivalent Miller capacitance, reduce The effect of the effect of switching speed

Active Publication Date: 2021-02-19
苏州英嘉通半导体有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its special protection mechanism, the drive current of the power device must be less than the maximum gate forward current it can withstand, resulting in insufficient drive capability, making the power device unable to be used in practical switching applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cascade circuit based on gate protection and cascade device
  • Cascade circuit based on gate protection and cascade device
  • Cascade circuit based on gate protection and cascade device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] ginseng figure 1 As shown, a cascade circuit is disclosed in this embodiment, and the cascade circuit includes:

[0040] A high-voltage depletion device 110, a low-voltage enhancement device 120, and a low-voltage depletion device 130. The high-voltage depletion device 110 includes a first gate 1101, a first source 1102, and a first drain 1103. The low-voltage enhancement device 120 Including a second gate 1201 , a second source 1202 and a second drain 1203 , the low voltage depletion device 130 includes a third gate 1301 , a third source 1302 and a third drain 1303 . Wherein, the first source 1102 is electrically connected to the second drain 1203, the first gate 1101 is electrically connected to the second source 1202, and the second gate 1201 is electrically connected to the third source 1302 and the third gate 1301. The first drain 1103 serves as the drain D of the cascode circuit, the second source 1202 serves as the source S of the cascade circuit, and the third ...

Embodiment 2

[0046] ginseng figure 2 As shown, a cascaded device is disclosed in this embodiment, and the cascaded device mainly includes a high voltage depletion device 110 , a low voltage enhanced device 120 and a low voltage depletion device 130 .

[0047] Specifically, the cascode device includes a substrate 210 , an epitaxial structure on the substrate, several passivation layers and several electrodes on the epitaxial structure.

[0048] Wherein, the epitaxial structure includes a channel layer 230 located on the substrate 210 and a barrier layer 240 located on the channel layer 230. Preferably, the epitaxial structure in this embodiment further includes a layer located between the channel layer 230 and the substrate 210. The buffer layer 220 between them.

[0049] Specifically, substrate 210 is one of silicon, sapphire, silicon carbide, etc.; buffer layer 220 is a combination of one or more of aluminum nitride layer, gallium nitride layer, aluminum gallium nitride layer, etc.; the...

Embodiment 3

[0068] ginseng image 3 As shown, the cascaded device in this embodiment is similar to the cascaded structure in Embodiment 2, except for the high-voltage depletion device 110 and the low-voltage depletion device 130 .

[0069] In the high-voltage depletion-mode device 110 of this embodiment, the first gate 271 realizes the depletion-mode operation mode by a metal-insulator-semiconductor-based structure, and the first depletion region includes the entire second passivation layer 252 The first groove (not shown), the first grid 271 is partly located in the first groove, the first dielectric layer 251 is formed between the first grid 271 and the barrier layer 240, and the first dielectric layer 251 is used as a metal - insulating layer - an insulating layer in the structure of a semiconductor.

[0070] In the low-voltage depletion device 130 of this embodiment, the third gate 273 realizes the depletion mode of operation by a structure based on a metal-insulator-semiconductor, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
porosityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a cascade circuit based on gate protection and a cascade device, the cascade circuit comprises a high-voltage depletion type device, a low-voltage enhanced type device and a low-voltage depletion type device, the high-voltage depletion type device comprises a first gate, a first source and a first drain, the low-voltage enhanced device comprises a second grid electrode, a second source electrode and a second drain electrode, the low-voltage depletion type device comprises a third grid electrode, a third source electrode and a third drain electrode, the first source electrode is electrically connected with the second drain electrode, the first grid electrode is electrically connected with the second source electrode, and the second grid electrode is electrically connected with the third source electrode and the third grid electrode. The first drain electrode serves as a drain electrode of the cascade circuit, the second source electrode serves as a source electrode of the cascade circuit, and the third drain electrode serves as a grid electrode of the cascade circuit. According to the invention, the equivalent Miller capacitance of a traditional enhanced device can be greatly reduced, and the cascade circuit can still meet the requirement on the switching speed of the device in practical application even if the grid driving current is seriously limited bythe grid protection unit.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a gate protection-based cascaded circuit and a cascaded device. Background technique [0002] Gallium nitride, as a third-generation wide-bandgap semiconductor material, has excellent characteristics compared with traditional materials. First, GaN has a wide energy gap of 3.4eV and a high breakdown electric field exceeding 3MV / cm. Compared with silicon and gallium arsenide, the energy gap of more than 3 times and the breakdown electric field of more than 10 times make electronic devices based on gallium nitride have a higher withstand voltage and are more suitable for high-power applications. At the same time, similar to gallium arsenide, gallium nitride also has the ability to form a two-dimensional electron gas through a heterostructure. The difference is that in the AlGaN / GaN heterostructure, the two-dimensional electron gas can be naturally formed by the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088
CPCH01L27/0883
Inventor 蒋胜柳永胜胡峰白强唐瑜陈辉于洁郑梦婕
Owner 苏州英嘉通半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap