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LED chip and preparation method thereof

A LED chip and chip technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of photoelectric parameter failure, weak water vapor isolation ability, etc., and achieve the effect of improving light efficiency, good water vapor isolation, and voltage reduction

Inactive Publication Date: 2019-06-28
ELEC TECH PHOTOELECTRIC TECH DALIAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this protective layer needs to be prepared by chemical vapor deposition in a plasma environment. In this process, plasma damage will be introduced to the electrode surface. In subsequent applications, these defects will be enlarged as the use time increases or the current increases. leading to the failure of photoelectric parameters
Additionally, if Figure 4 As shown, the film layer of this protective layer is in an amorphous state, and its ability to block water vapor is weaker than that of a crystalline film layer.

Method used

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  • LED chip and preparation method thereof
  • LED chip and preparation method thereof
  • LED chip and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] First, an LED chip body is provided. The main body of the LED chip includes a substrate 1 on which an N semiconductor layer 2 , a light emitting layer 3 and a P semiconductor layer 4 are sequentially formed. Parts of the P semiconductor layer 4 , the light emitting layer 3 and the N semiconductor layer 2 are etched away by a conventional MESA (platform), forming a gap 5 extending from the P semiconductor layer 4 to the N semiconductor layer 2 . Then, a current blocking layer 6 is formed by depositing and etching on a part of the P semiconductor layer 4 . Then, an indium tin oxide layer is deposited on the P semiconductor layer 4 by magnetron sputtering with a thickness of 40 nm, so that the indium tin oxide layer covers the current blocking layer 6 .

[0042] Then, the solid metal raw material Al is deposited on the indium tin oxide layer by vacuum evaporation to obtain a metal Al layer with a thickness of 2.5 nm, and then the metal Al layer is annealed to obtain a cry...

Embodiment 2

[0048] First, an LED chip body is provided. The main body of the LED chip includes a substrate 1 on which an N semiconductor layer 2 , a light emitting layer 3 and a P semiconductor layer 4 are sequentially formed. Parts of the P semiconductor layer 4 , the light emitting layer 3 and the N semiconductor layer 2 are etched away by a conventional MESA (platform), forming a gap 5 extending from the P semiconductor layer 4 to the N semiconductor layer 2 . Then, a current blocking layer 6 is formed by depositing and etching on a part of the P semiconductor layer 4 . Then, an indium tin oxide layer is deposited on the P semiconductor layer 4 by magnetron sputtering, with a thickness of 20 nm, so that the indium tin oxide layer covers the current blocking layer 6 .

[0049] Then the solid metal raw material Ni is deposited on the indium tin oxide layer by a sputtering deposition method to obtain a metal Ni layer with a thickness of 0.5nm, and then the metal Ni layer is annealed to o...

Embodiment 3

[0053] First, an LED chip body is provided. The main body of the LED chip includes a substrate 1 on which an N semiconductor layer 2 , a light emitting layer 3 and a P semiconductor layer 4 are sequentially formed. Parts of the P semiconductor layer 4 , the light emitting layer 3 and the N semiconductor layer 2 are etched away by a conventional MESA (platform), forming a gap 5 extending from the P semiconductor layer 4 to the N semiconductor layer 2 . Then, a current blocking layer 6 is formed by depositing and etching on a part of the P semiconductor layer 4 . Then, an indium tin oxide layer is deposited on the P semiconductor layer 4 by magnetron sputtering, with a thickness of 100 nm, so that the indium tin oxide layer covers the current blocking layer 6 .

[0054] Then, the solid metal raw material Ti is deposited on the indium tin oxide layer by a sputtering deposition method to obtain a metal Ti layer with a thickness of 5 nm, and then the metal Ti layer is annealed to ...

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Abstract

The present invention relates to a LED chip and a preparation method thereof. The method comprises the following steps of: providing a LED chip main body; forming a metal layer on the surface of the chip main body by employing a physical vapor deposition mode; and performing annealing treatment for the chip main body after deposition of the metal layer to obtain a crystalline state metallic oxidethin film. The prepared LED chip comprises a chip main body and a crystalline state metallic oxide thin film protection layer formed on the surface of the chip main body. The crystalline state metallic oxide thin film protection layer can provide better water vapor isolation capability for the LED chip, in the annealing process, part of metal atoms are diffused into a tin indium oxide layer to increase the number of free electrons of the tin indium oxide layer so as to improve the current expansion capability of the current extension layer, reduce the working voltage of the LED chip and improve the photoelectric converting efficiency of the LED chip.

Description

technical field [0001] The invention relates to the field of LED technology, in particular to an LED chip and a preparation method thereof. Background technique [0002] With the rapid development of LED technology and the gradual improvement of LED light efficiency, the application of LED will become more and more extensive. As the global energy shortage becomes more and more serious, people pay more and more attention to the development prospect of LED in the lighting market. LED will be a potential light source to replace incandescent lamps, tungsten lamps and fluorescent lamps. [0003] At present, an insulating layer is deposited on the surface of the LED chip as a protective layer to protect the electrode from water vapor. The material of this protective layer is generally SiO 2 、SiN x Wait. However, this protective layer needs to be prepared by chemical vapor deposition in a plasma environment. In this process, plasma damage will be introduced to the electrode sur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44
Inventor 刘珊珊廖汉忠陈顺利丁逸圣
Owner ELEC TECH PHOTOELECTRIC TECH DALIAN
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