A high-power ultraviolet light-emitting diode and its manufacturing method
A technology of light-emitting diodes and manufacturing methods, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low quantum efficiency, weak current expansion effect, and multiple active area areas in deep ultraviolet light-emitting diodes, so as to ensure current expansion effect, improve the current expansion capability, and avoid the effect of area loss
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Embodiment 1
[0068] This embodiment provides a high-power ultraviolet light-emitting diode, such as figure 1 , 2 As shown, it includes: a conductive substrate 111, which has both front and back surfaces; a light-emitting structure, which is flip-chip welded on the front surface of the conductive substrate 111 through a metal bonding layer 110; A conductive semiconductor layer 103, an active layer 104, a second conductive semiconductor layer 105, a transparent conductive layer 106, a metal mirror 107, an isolation layer 108, and a conductive layer 109; a first conductive semiconductor layer 103, an active layer 104 1. The second conductive type semiconductor layer 105 constitutes the epitaxial layer of the ultraviolet light emitting diode; the transparent conductive layer 106 is provided with a number of uniformly distributed extended through holes 113, and each extended through hole 113 reveals part of the surface of the second conductive type semiconductor layer 105; Metal reflector 107 ...
Embodiment 2
[0091] This embodiment provides another high-power ultraviolet light-emitting diode, such as Figure 4 , 5 As shown, it includes: a conductive substrate 111, which has both front and back surfaces; a light-emitting structure, which is flip-chip welded on the front surface of the conductive substrate 111 through a metal bonding layer 110; A conductive semiconductor layer 103, an active layer 104, a second conductive semiconductor layer 105, a transparent conductive layer 106, a metal mirror 107, an isolation layer 108, and a conductive layer 109; a first conductive semiconductor layer 103, an active layer 104 1. The second conductive type semiconductor layer 105 constitutes the epitaxial layer of the ultraviolet light emitting diode; the transparent conductive layer 106 is provided with a number of uniformly distributed extended through holes 113, and each extended through hole 113 reveals part of the surface of the second conductive type semiconductor layer 105; Metal reflect...
Embodiment 3
[0115] This embodiment provides another high-power ultraviolet light-emitting diode, such as Figure 7 , 8 As shown, it includes: a conductive substrate 111, which has both front and back surfaces; a light-emitting structure, which is flip-chip welded on the front surface of the conductive substrate 111 through a metal bonding layer 110; A conductive semiconductor layer 103, an active layer 104, a second conductive semiconductor layer 105, a transparent conductive layer 106, a metal mirror 107, an isolation layer 108, and a conductive layer 109; a first conductive semiconductor layer 103, an active layer 104 1. The second conductive type semiconductor layer 105 constitutes the epitaxial layer of the ultraviolet light emitting diode; the transparent conductive layer 106 is provided with a number of uniformly distributed extended through holes 113, and each extended through hole 113 reveals part of the surface of the second conductive type semiconductor layer 105; Metal reflect...
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