A light emitting diode and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems that the luminous efficiency of light-emitting diodes needs to be improved, and achieve the effects of increasing edge luminous efficiency, improving current expansion ability, and improving luminous efficiency

Active Publication Date: 2021-02-02
YANGZHOU CHANGELIGHT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although light-emitting diodes have many advantages and are widely used, the luminous efficiency of existing light-emitting diodes needs to be improved.

Method used

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  • A light emitting diode and its manufacturing method
  • A light emitting diode and its manufacturing method
  • A light emitting diode and its manufacturing method

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] As mentioned in the background technology, compared with light-emitting diodes made of ordinary materials, quaternary AlGaInP is a semiconductor material with a direct wide band gap. Since the light-emitting band of the material can cover the 390nm-780nm band of visible light, the quaternary AlGaInP made of this material Visible high-brightness light-emitting diodes have received more and more attention. Light-emitting diodes, especially AlGaInP (quater...

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Abstract

The invention discloses a light-emitting diode and a manufacturing method thereof. Firstly, a first scribe line with a first line width is etched on an epitaxial wafer, and then a second scribe line with a second line width is etched at the first scribe line. The width is smaller than the first line width, thereby reducing the area to be removed by etching the P-type GaP current spreading layer, and improving the current spreading ability; When the ablation groove of the third line width is laser ablated at the track, the melt produced by the ablation of the laser on the P-type GaP current spreading layer is reduced, thereby reducing the absorption loss of the melt on the light emitted by the light-emitting diode, and improving the efficiency of the light-emitting diode. luminous efficiency. And, roughen the exposed surface of the P-type GaP current spreading layer away from the substrate and its sidewall, thereby reducing the total reflection phenomenon in this region and increasing the edge luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting, more specifically, to a light emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English for Light Emitting Diode, referred to as LED) is a semiconductor light emitting device, which can effectively convert electrical energy into light energy. and other compounds. Most of the white light LEDs currently produced are made by covering a blue light LED (near-UV, wavelength 450nm-470nm) with a light yellow phosphor coating. White light LEDs are the third generation of electricity after incandescent and fluorescent lamps. The light source has become the goal that light source and lighting research institutions around the world are competing to develop and strive to obtain, and it is a star industry in the future lighting field. Compared with light-emitting diodes made of ordinary materials, the quaternary AlGaInP is a semiconduc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/22
CPCH01L33/0062H01L33/0095H01L33/14H01L33/22
Inventor 王洪占张美徐洲王磊
Owner YANGZHOU CHANGELIGHT
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