High-capacity five-level converter power cabinet

A power cabinet and five-level technology, which is applied in the field of large-capacity five-level converter power cabinets, can solve problems affecting the safe operation of IGCT devices, rising IGCT shutdown voltage, and unfavorable maintenance work, etc., to ensure work performance, improved output capability, and reduced stray inductance

Active Publication Date: 2013-06-26
AUTOMATION RES & DESIGN INST OF METALLURGICAL IND +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The increase of stray inductance will increase the turn-off voltage of IGCT and affect the safe operation of IGCT devices
In addition, the scattered installation of the power components of the IGCT is not conducive to the maintenance work

Method used

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  • High-capacity five-level converter power cabinet
  • High-capacity five-level converter power cabinet
  • High-capacity five-level converter power cabinet

Examples

Experimental program
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Embodiment Construction

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] The invention provides a large-capacity five-level converter power cabinet, which is aimed at a five-level frequency conversion device using power electronic devices such as IGCT. The circuit topology is as follows figure 1 As shown in the figure, D1~D36 are rectifier diodes, D37~D48 are clamping diodes, C1~C6 are DC capacitors, T1~T24 are IGCTs (including anti-parallel diodes), and the inverter side of the five-level frequency conversion device adopts five power Flat NPC / H bridge structure, the DC side of each phase is composed of two sets of diode three-phase rectifier bridges connected in series, and the intermediate link is connected with a DC capacitor.

[0025] figure 2 It is a schematic structural diagram of a five-level power cabinet provided by the present invention. The five-level power cabinet is composed of a rectifier power cabinet...

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PUM

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Abstract

The invention discloses a high-capacity five-level converter power cabinet which belongs to the technical field of semiconductor switches. The five-level converter power cabinet comprises a rectifying power cabinet, a first inversion power cabinet, a capacitor box and a second inversion power cabinet in sequence from left to right, wherein the rectifying power cabinet internally comprises three groups of independent rectifying power modules; the capacitor box internally comprises three independent capacitor power modules; and the first and second inversion power cabinets internally comprise three groups of independent inversion power modules respectively. According to the high-capacity five-level converter power cabinet, a compact circuit connection form is provided, so that the stray inductances of the circuits are decreased and the output capability of a device is improved. At the same time, when a plurality of five-level convertor power cabinets are connected in parallel for output use, the output capability of the device can be improved to a greater extent, so that the working performance of the device is ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a power cabinet structure for a large-capacity five-level converter with an integrated gate commutated thyristor (IGCT), which is suitable for 3-100MVA high-power transformers. In the converter, it can be widely used in the field of high-power transmission. Background technique [0002] The integrated gate commutated thyristor (IGCT) is a device that integrates the gate drive circuit and the gate commutated thyristor GCT into one body. Gate commutated thyristor GCT is a new type of power semiconductor device based on GTO structure. It not only has the same high blocking capability and low on-state voltage drop as GTO, but also has the same switching performance as IGBT. It has both GTO and IGBT The director is an ideal megawatt-level, medium-voltage switching device. [0003] Since IGCT has a fast switching function like IGBT and low conduction loss lik...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/00H02M7/483H05K7/20
Inventor 李崇坚王成胜段巍李向欣朱春毅唐磊杨琼涛周亚宁兰志明李凡
Owner AUTOMATION RES & DESIGN INST OF METALLURGICAL IND
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