IGBT switch instant surge suppression apparatus and method for PWM current converting system

A surge suppression and flow system technology, applied in the IGBT switch instantaneous surge suppression device, IGBT switch instantaneous surge suppression field, can solve the problems of complexity, many physical model parameters, inaccurate parameter extraction, etc., to achieve the suppression of instantaneous surge impact effect

Active Publication Date: 2017-04-26
SIEMENS ELECTRICAL DRIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such as the Hefner model and the Kraus model rely on the internal physical mechanism of the component, which can accurately characterize the dynamic and static performance of the IGBT. However, it needs to be based on a clear understanding of its internal structure, and the physical model parameters are many and complex, and involve a lot of calculus transform
As far as the functional model is concerned, it only needs to take into account the ex

Method used

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  • IGBT switch instant surge suppression apparatus and method for PWM current converting system
  • IGBT switch instant surge suppression apparatus and method for PWM current converting system
  • IGBT switch instant surge suppression apparatus and method for PWM current converting system

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Embodiment Construction

[0035] In order to make the purpose, technical solution and advantages of the present invention clearer, the following examples are given to further describe the present invention in detail.

[0036] figure 2 It is a schematic circuit schematic diagram of the stray inductance parameter extraction scheme used in the IGBT switch instantaneous surge suppression method of the PWM conversion system of the present invention. image 3 for figure 2 The schematic diagram of the voltage and current waveforms of the IGBT when the IGBT is turned on in the schematic diagram of the circuit principle is shown. See figure 2 and image 3 , the stray inductance parameter extraction scheme used in the present invention will be described in detail below. It should be noted that, figure 2 There are two IGBTs, which consist of the first IGBT tube IGBT 1 and the second IGBT tube IGBT 2 , the first IGBT tube IGBT 1 Located on the upper bridge arm, the second IGBT tube IGBT 2 Located on th...

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Abstract

The invention provides an IGBT switch instant surge suppression apparatus and method for a PWM current converting system. The method comprises the following steps: a total stray inductance value LTotal of the PWM current converting system in a stray inductance extraction time slot t1-t2 is obtained, an IGBT equivalent circuit model is built based on the total stray inductance value LTotal and characteristics of the PWM current converting system, the IGBT equivalent circuit model comprises a non-inductive absorbing thin film capacitor CSnubber used for suppressing IGBT switch instant surges, a direct current bus stray inductance value LDC-Link of the PWM current converting system is obtained based on the IGBT equivalent circuit model, a capacitance value of the non-inductive absorbing thin film capacitor CSnubber is obtained based on the direct current bus stray inductance value LDC-Link, an IGBT surge voltage change preset value [delta]V2 and an IGBT work current IC, and the IGBT switch instant surges can be suppressed via the non-inductive absorbing thin film capacitor CSnubber. The IGBT switch instant surge suppression apparatus and method for the PWM current converting system can be used for effectively suppressing the IGBT switch instant surges.

Description

technical field [0001] The invention relates to the technical field of PWM conversion, in particular to an IGBT switch transient surge suppression device of a PWM conversion system and a method for suppressing an IGBT switch transient surge of a PWM conversion system. Background technique [0002] In the PWM converter system, the IGBT usually operates in a high-frequency switching state. The high di / dt and the parasitic inductance of the DC bus work together to cause a serious inter-electrode voltage spike when the IGBT is turned off transiently, even exceeding the IGBT. The voltage withstand value, such as figure 1 As shown, thereby deteriorating the electrical stress, switching loss and electromagnetic interference of the IGBT. At the same time, the existence of system stray parameters may also lead to changes in the equivalent topology and parameters of the main circuit, which in turn will lead to deviations in the impedance characteristics of the system, resulting in di...

Claims

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Application Information

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IPC IPC(8): H02M1/32
CPCH02M1/32H02M1/0038
Inventor 孙强高成海
Owner SIEMENS ELECTRICAL DRIVES
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