Photovoltaic element and method for manufacture thereof

Abstract

A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.

Description

[0001] This invention is related to a photovoltaic element for directly converting an optical energy such as solar light into an electric energy and a method for manufacturing the same.[0002] A heterojunction type photovoltaic element, in which an amorphous silicon layer or a micro crystalline silicon layer are deposited on a single crystalline silicon substrate, is well-known. The heterojunction can have its distinguish function when an impurity is doped on an amorphous silicon layer or a micro crystalline silicon layer.[0003] In the amorphous silicon layer or mircocrystalline silicon layer which is doped, however, defects caused by doping increase and the characteristic of the heterojunction interface is degraded. The degradation of the interface characteristic results in a lower conversion efficiency because of a recombination of carriers in the case where these silicon layers are used for a photovoltaic element.[0004] To overcome this problem, Japanese Patent Laid-Open No.70183 / ...

AI Technical Summary

Benefits of technology

[0014] When the bottoms of the uneven sections are rounded, the thickness of the amorphous or micro crystalline silicon layer of different conductivity type which is formed thereon can be uniform. In particular, a open circuit voltage and fill factor of a photovoltaic element having an HIT structure which improves a characteristic of the heterojunction interface by interposing the substantially intrinsic amorphous or micro crystalline silicon layer. The substantially intrinsic amorphous or micro crystalline silicon layer reduces defects at the heterojunction interface with a crystalline silicon substrate and improves the characteristic of the heterojunction interface. Thus, the layer does not affect the improvement of the heterojunction interface even when dopant is diffused on the intrinsic amorphous or micro crystalline silicon layer in the subsequent processes.

[0019] By using this structure, a BSF type photovoltaic element can be obtained in a low temperature process. The substantially intrinsic amorphous or micro crystalline silicon layer can reduce defects at the heterojunction interface with a crystalline silicon substrate and improve the characteristic of heterojunction interface.

[0026] By using this structure, a warp of the substrate is prevented even when the substrate is made thinner.

[0028] A substantially intrinsic amorphous or micro crystalline silicon layer is formed by depositing an intrinsic amorphous or micro crystalline silicon layer by plasma resolution using raw material gas such as silane without mixing dopant gas when forming a layer. In the subsequent processes, dopant may be diffused in the substantially intrinsic or micro crystalline silicon layer. However, the substantially intrinsic amorphous or micro crystalline silicon layer is formed so as to avoid defects at the heterojunction interface with a single crystalline silicon substrate, and the interface characteristic is improved when the layer is formed without containing dopant gas. Thus, the interface characteristic is not affected even if dopant is diffused after forming a layer.

[0032] An alkaline solution containing an interface active agent is preferably used in the second process. In the above composition, the appearance of the surface after isotropically etched does not affect the strength of the short circuit current of a photovoltaic element since the bottoms of the uneven sections are slightly rounded. And the variety of the thickness of the amorphous or micro crystalline layer is prevented, eliminating the lowered open circuit voltage and short circuit between the substrate and the electrode. Therefore, it is possible to achieve an improved output characteristic of a photovoltaic element and high yields.

Problems solved by technology

In the amorphous silicon layer or mircocrystalline silicon layer which is doped, however, defects caused by doping increase and the characteristic of the heterojunction interface is degraded.

The degradation of the interface characteristic results in a lower conversion efficiency because of a recombination of carriers in the case where these silicon layers are used for a photovoltaic element.

In the above described conventional structure of the front surface of the substrate 1, a problem may occur when the intrinsic amorphous silicon layer 2 is formed on the substrate 1 by a plasma CVD method.

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