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Ceramic thin film on various substrates, and process for producing same

a technology of ceramic thin film and substrate, applied in the field of thin film, can solve the problems of limited sic production rate, increased disorder of sic network, shrinking and outgasing phenomena,

Inactive Publication Date: 2005-06-30
BISHOP'S UNIVERSITY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The rate of SiC production is limited to the number of Si—C bonds produced on the surface of the substrate.
In the method of Grigoriev et al., the polymeric source already contains most of the Si—C bonds required for the formation of the SiC film; however, the molecular source is carried to the surface inside cages of solvent molecules, implicitly leading to contamination of the film, shrinking and outgassing phenomena, due to solvent evaporation and polymer cracking.
They have observed that the disorder of the Si—C network increased with using the high bias voltages during the deposition.
Under the impact of high-energy ions or substrate heating the films consisted of sp2 C—C bonds and Si—N bonds, and the formation of sp3 C—N bonds was difficult.

Method used

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  • Ceramic thin film on various substrates, and process for producing same
  • Ceramic thin film on various substrates, and process for producing same
  • Ceramic thin film on various substrates, and process for producing same

Examples

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example 1

Synthesis of an n-Type Amorphous Silicon Carbide (N-Doped) Thin Film Via the PS-CVD Process

[0112] Synthesis—Charges of polydimethylsilane and in-house prepared polymethylsilane (M. Scarlete et al., 1995, Chem. Mater., 6, p. 1214) have been pyrolyzed in a single-zone Lindberg ceramic furnace. The synthesis was performed in a 2″ quartz tube attached to a silicone-based hydraulic lock bubbler and to a vacuum line capable of providing a reduced pressure of 5*10−2 torr. The synthesis was performed in a gaseous atmosphere of UHP—Ar or in home purified NH3. The purification of NH3 was obtained via passing the gas through a 1000 mm column of KOH and a 250 mm column of a mixture of 3 and 4 Å molecular sieves. The furnace was operated via a PID Eurotherm temperature-controller proving ±0.5° C. in the range of 110 to 1100° C. at 10 torr above the atmospheric pressure. The atmosphere of the pyrolysis was carefully purified from oxygen and water vapours via a series of evacuations / Ar-fillings. ...

example 2

Synthesis of a p-Type Amorphous Silicon Carbide (B-Doped) Thin Film Via the PS-CVD Process

[0127] Synthesis—Charges of poly(dimethylsilane) (PDMS) were pyrolyzed in a Lindberg* BlueM single-zone furnace. The furnace was operated via a PID Eurotherm temperature-controller providing an accuracy of ±0.5° C. in the ranger of 110 to 1100° C. The furnace was equipped with a 2.5″ quartz tube attached to a silicone-based hydraulic lock bubbler and a vacuum line capable of providing 5*10−2 torr vacuum as measured with a Welch Pirani-gauge. The atmosphere prior to pyrolysis was carefully purged of moisture and oxygen via a series of evacuations and UHP-Ar fillings. The residual oxygen level obtained after the purging procedure was measured using an Innovative Technology gauge and was found to be below 1 ppm. Once purged, a partial pressure of BCl3 was created in the reactor.

*Trademark

[0128] The substrates used were p-type (B doped) (100) oriented single crystal silicon substrates, electroni...

example 3

Synthesis of an Amorphous Silicon Carbonitride Thin Film Via the PS-CVD Process

[0133] Synthesis—In-house prepared polymethylsilane and poly(dimethyl)silane were pyrolyzed under NH3. The nitrogen-containing amorphous layers were deposited on electronic-grade substrates such as silicon single crystal wafers, quartz, and alumina. The pyrolyses were conducted at 5-20 torr above the atmospheric pressure and were undertaken in a Lindberg single-zone, programmable furnace equipped with a Eurotherm PID temperature controller with a maximum temperature of 1100±0.5° C. The temperature cycle during the PS-CVD process was the following: 4° / min 110-450° C., 30 min at 450° C., 4-8° C. / min up to 1050° C., and 30 min at 1050° C. (batch process).

[0134] Characterization—Prior to analysis of the film, the products of the chemical reactions involving the carbon-for-nitrogen exchange were followed in the ceramic residue of the polymer. There was continuous C / N replacement activated by a critical tempe...

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Abstract

A thin film of an amorphous silicon-based material on a substrate. The thin film has the property of any one of a carrier concentration of 1013 to 1018 cm−3 in a depletion zone next to the substrate, an electron mobility of 5 to 30 cm2V−1s−1, a dangling bond concentration of 1012 to 1019 cm−3, no solvent-related defects, or a residual hydrogen concentration of 0 to 25 atomic %. The thin film may be used to fabricate many devices such as solar cells, light-emitting diodes, transistors, photothyristors, and integrated monolithic devices on a single chip.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This patent application is a continuation-in-part application of co-pending U.S. application Ser. No. ______ [not yet assigned], filed Nov. 22, 2004, entitled “Ceramic Thin Film On Various Substrates, And Process For Producing Same”, which is the 371 National Phase of International Application No. PCT / CA03 / 000763, filed May 23, 2003, which was published in English under PCT Article 21(2) as WO 03 / 100123 A1. All of these applications are incorporated herein in their entirety.FIELD OF THE INVENTION [0002] The present invention relates to a thin film of an amorphous silicon-based material on a substrate. BACKGROUND OF THE INVENTION [0003] Kitabatake et al., disclose in U.S. Pat. No. 6,270,573, CVD and CVD-related methods of producing silicon carbide substrates, including the growing of silicon carbide film by supplying separate silicon atoms and carbon atoms on a surface. The silicon-carbon bond formation occurs mainly on the surface of th...

Claims

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Application Information

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IPC IPC(8): C23C16/32C23C16/46
CPCC23C16/325Y10T428/265C23C16/46Y10T428/31504
Inventor SCARLETE, MIHAIAKTIK, CETIN
Owner BISHOP'S UNIVERSITY
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