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InP quantum dot and preparation method therefor

A technology of quantum dots and quantum efficiency, applied in the field of InP quantum dots and their preparation, can solve the problems of uneven particle size and poor quantum efficiency of quantum dots, and achieve the effects of uniform particle size, reducing loss and improving fluorescence quantum yield.

Active Publication Date: 2017-05-24
NANJING TECH CORP LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The main purpose of the present invention is to provide a kind of InP quantum dots and preparation method thereof, to solve the problem of poor quantum efficiency of InP quantum dots and inhomogeneous particle size of quantum dots in the prior art

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  • InP quantum dot and preparation method therefor

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preparation example Construction

[0029] In another typical embodiment of the present application, a method for preparing the above-mentioned InP quantum dots is provided. The preparation method includes: step S1, reacting the metal salt and the InP core to obtain an InP core modified by the metal salt; step S2, coating ZnSe on metal salt modified InP x S 1-x Shell or ZnSe / ZnS shell to get InP quantum dots.

[0030] Use the above-mentioned metal salts to react with InP, so that metal ions enter the lattice of InP, and then coat ZnSe on the InP core modified by metal salts. x S 1-x Shell or ZnSe / ZnS shell, because the lattice constant gap between InP core and ZnSe is small, therefore the shell with S and Se can be coated on the surface of InP core relatively easily, and then make the InP quantum dot of the present application It has high quantum efficiency and stability; at the same time, the obtained InP quantum dot has a half-peak width less than or equal to 50nm, and the particle size of the quantum dot i...

Embodiment 1

[0038] Weigh 57mg (0.2mmol) In(Ac) 3 , 133mg myristic acid, 5g ODE (1-octadecene), vacuumize at 100°C for 2 hours, then heat up to 180°C, inject 0.1mmol (TMS) 3 A mixed solution of P (tris(trimethylsilyl)phosphine) and 0.3ml ODE was kept at 180° C. for 30 minutes to obtain the first system containing InP core.

[0039] Raise the temperature of the first system to 280°C, add GaCl 3 (0.1 mmol), and reacted for 5 min to obtain the second system containing metal salt-modified InP cores. The molar percentage of Ga:In is 0.5.

[0040] Add ZnOA (zinc oleate, 0.5mmol), OLEA (oleylamine, 1mmol), Se-TOP (selenium-trioctylphosphine, 0.1mmol), S-TOP (sulfur-trioctylphosphine, 0.4mmol), reacted for 10min.

[0041] After the reaction was completed, it was lowered to room temperature, extracted three times with methanol to obtain the extract, and the extract was precipitated with acetone and centrifuged to obtain a centrifugal precipitate, and then the centrifugal precipitate was dissolv...

Embodiment 2

[0043] Weigh 57mg (0.2mmol) In(Ac) 3 , 133mg myristic acid, 5g ODE, vacuumize at 100°C for 2 hours, then heat up to 180°C, inject 0.1mmol (TMS) 3 The mixed solution of P and 0.3ml ODE was kept at 180°C for 30min to obtain the first system containing InP.

[0044] Raise the temperature of the first system to 280°C, add ScCl 3 (0.1 mmol) was reacted for 5 min to obtain the second system containing metal salt-modified InP. The molar percentage of Sc:In is 0.5.

[0045] Add ZnOA (zinc oleate 0.5mmol), OLEA (oleylamine 1mmol), Se-TOP (selenium-trioctylphosphine 0.1mmol), S-TOP (sulfur-trioctylphosphine 0.4mmol) to the second system, React for 10 minutes.

[0046] After the reaction was completed, it was lowered to room temperature, extracted three times with methanol to obtain the extract, and the extract was precipitated with acetone and centrifuged to obtain a centrifugal precipitate, and then the centrifugal precipitate was dissolved in toluene to obtain purified InPScZnSe ...

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Abstract

The invention provides an InP quantum dot and a preparation method therefor. The InP quantum dot comprises an InP core modified with a metal salt and a shell wrapping the core, wherein the shell is ZnSe / ZnS or ZnSexS(1-x), x is greater than 0 and is not greater than 1, the half-peak breadth of the InP quantum dot is less than or equal to 50nm, and the quantum efficiency is more than or equal to 70%. Due to the modification of the metal salt, dangling bonds on the surface of InP are eliminated, the loss of energy in form of non-optical properties can be reduced, and the fluorescent quantum yield of quantum dots with metal salt modified InP is increased; in addition, the difference of lattice constants of InP and ZnSe is relatively small, so that the shell with S and Se can relatively easily coat the surface of the InP core, and then, the InP quantum dot provided by the invention has relatively high quantum efficiency and stability; and meanwhile, the half-peak breadth of the InP quantum dot is less than or equal to 50nm, so that the particle size of the quantum dots is relatively uniform.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to an InP quantum dot and a preparation method thereof. Background technique [0002] Traditional II-VI quantum dot materials such as CdSe, CdS, PbS and other quantum dots are inherently toxic, and their forbidden band width is relatively narrow, which restricts their application in production and life. Compared with II-VI quantum dot materials, InP quantum dots are inherently non-toxic, making them potentially useful in bioluminescent probes. However, compared with II-VI quantum dots, InP quantum dot materials still have some insurmountable shortcomings in the synthesis process, such as low fluorescence quantum yield, poor chemical stability and uneven particle size of quantum dots, which are serious Restricts the luminescence performance of InP quantum dots. [0003] In order to improve the photochemical stability and fluorescence quantum yield of InP quantum dots, two metho...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/70B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/883C09K11/886
Inventor 高静汪均陈昌磊涂丽眉赵飞苏叶华
Owner NANJING TECH CORP LTD
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