Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High temperature gate bias test method of sic MOSFET device, computer equipment and storage medium

A high-temperature gate bias and test method technology, which is applied in the direction of single semiconductor device testing, instruments, measuring devices, etc., can solve problems such as not considering the dependence of threshold voltage time

Active Publication Date: 2022-08-02
CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Based on this, it is necessary to provide a high temperature gate bias test method for SiC MOSFET devices, computer equipment and storage devices for the existing high temperature gate bias test method, which does not consider the dependence of threshold voltage on gate bias voltage change on time. medium

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High temperature gate bias test method of sic MOSFET device, computer equipment and storage medium
  • High temperature gate bias test method of sic MOSFET device, computer equipment and storage medium
  • High temperature gate bias test method of sic MOSFET device, computer equipment and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the related drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that a thorough and complete understanding of the present disclosure is provided.

[0024] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical", "horizontal", "left", "right", "upper", "lower", "front", "rear", "circumferential" and similar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of high temperature gate bias test, and discloses a high temperature gate bias test method, computer equipment and storage medium of a SiC MOSFET device. When testing the electrical parameters of the device, if the measurement of the SiC MOSFET device is not completed in time, the stress interruption time of the SiC MOSFET device can be evaluated. Stress time as a function of time, and stress interruption time to obtain additional stress time for SiCMOSFET devices. Apply a bias stress with additional stress time to the SiC MOSFET device to restore the threshold voltage on the SiC MOSFET device to the preset threshold, and then measure the SiC MOSFET device in time to ensure that the measured threshold voltage at this time can express Real-world drift of SiCMOSFET devices.

Description

technical field [0001] The invention relates to the technical field of high temperature gate bias test, in particular to a high temperature gate bias test method of a SiC MOSFET device, computer equipment and a storage medium. Background technique [0002] As a typical third-generation semiconductor material, SiC has the advantages of large band gap, high critical breakdown electric field, high electron saturation velocity and high thermal conductivity. It is very suitable for the preparation of high temperature, high voltage, high power and radiation-resistant power electronic devices. In the SiC (Silicon Carbide) power device family, SiC MOSFET devices (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors) have the advantages of high operating frequency, low switching losses, low on-resistance and high current density, which can significantly improve the power system switching frequency and overall efficiency. At present, the main reliability problems of SiC...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 陈媛来萍张鹏贺致远陈义强刘昌徐新兵
Owner CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com