Nano-wire field effect transistor

A technology of field effect transistors and transistors, applied in semiconductor devices, electrical components, circuits, etc., to achieve the effects of increasing current switching ratio, improving performance, and reducing static power consumption

Active Publication Date: 2011-07-20
SEMICON MFG INT (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Planar process field effect transistors are limited by short channel effects and increased gate current in the trend of scaling down

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1. Silicon nanowire field effect transistor with core-shell structure and its performance detection

[0020] The structure of the nanowire field effect transistor is as follows figure 1 As shown, where the work function of the gate electrode 1 material is set to 4.61 electron volts, the source region 2 and the drain region 3 are doped with phosphorus at a concentration of 1×10 20 cm -3 silicon material, the core part 4 is silicon oxide, and the shell part 5 is boron doping concentration 1×10 11 cm -3 silicon material, and the gate dielectric layer 6 is silicon oxide with a thickness of 2nm. The shell radius of the core-shell structure is 10 nm, the length of the core-shell structure is 0.1 micron, and the core radius is adjustable.

[0021] The above-mentioned transistors can be prepared according to existing methods, and the preparation process is briefly described as follows:

[0022] 1) Etch the silicon pillars on the silicon wafer with a circular sil...

Embodiment 2

[0031] Embodiment 2, germanium nanowire field effect transistor with core-shell structure and its performance detection

[0032] The structure of the nanowire field effect transistor is still as figure 1 As shown, wherein, the work function of the gate electrode 1 material is set to 4.33 electron volts, the source region 2 and the drain region 3 are doped with arsenic concentration of 1×10 20 cm -3 germanium, the core part 4 is silicon oxide, and the shell part 5 is boron doping concentration 2×10 12 cm -3 germanium material, and the gate dielectric layer 6 is silicon oxide with a thickness of 1.5nm. The shell radius of the core-shell structure is set at 10 nm, the length of the core-shell structure is 100 nm, and the core radius is adjustable.

[0033] The current output characteristics, switching ratio, threshold voltage and leakage-induced barrier lowering effect of the transistor device were tested respectively, and the results obtained are as follows: Figure 6-Figur...

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Abstract

The invention discloses a nano-wire field effect transistor comprising a gate electrode, a source region, a drain region, a central region and a gate dielectric layer. The central region is in the core-shell structures which are coaxial; the gate dielectric layer fully surrounds the central region; the gate electrode fully surrounds the gate dielectric layer; the source region and the drain region are respectively arranged on two sides of the central region; the core structure of the central region is made from insulating material, and the shell structure of the central region is made from semiconductor material; the doping type and the doping concentration of the semiconductor material of the shell structure of the central region are adjustable; the lengths of both the core structure andthe shell structure and the radii of both the core structure and the shell structure are adjustable; and the materials of the gate dielectric layer, the gate electrode, the source region and the drain region are adjustable. Due to the adoption of the insulating core structure, the off-current of the traditional nano-wire transistor can be reduced effectively, and the current on-off ratio of the devices can be increased. The threshold voltage shifting and the drain induced barrier lowering of the nano-wire field effect transistor are less affected by the short channel effect, and the size reducing performance of the nano-wire field effect transistor is more excellent.

Description

technical field [0001] The invention relates to a device for semiconductor integrated circuits, in particular to a nanowire field effect transistor. Background technique [0002] Manufacturing high-speed, low-power semiconductor devices is the driving force for the development of the semiconductor industry. Planar process field effect transistors are limited by the short channel effect and the increase of gate current in the trend of scaling down. New non-planar device structures have been proposed, including silicon-on-insulator, double-gate, triple-gate, and nanowire field-effect transistors. Among them, the nanowire field effect transistor can provide a high current switching ratio, and is less affected by the short channel effect and the leakage-induced barrier lowering effect. On the basis of existing nanowire field effect transistors, it is of great significance to further increase the current switching ratio and improve the size reduction performance for the manufac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/12H01L29/06
Inventor 何进张立宁张健张兴
Owner SEMICON MFG INT (BEIJING) CORP
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