Nano-wire field effect transistor

Abstract

The invention discloses a nano-wire field effect transistor comprising a gate electrode, a source region, a drain region, a central region and a gate dielectric layer. The central region is in the core-shell structures which are coaxial; the gate dielectric layer fully surrounds the central region; the gate electrode fully surrounds the gate dielectric layer; the source region and the drain region are respectively arranged on two sides of the central region; the core structure of the central region is made from insulating material, and the shell structure of the central region is made from semiconductor material; the doping type and the doping concentration of the semiconductor material of the shell structure of the central region are adjustable; the lengths of both the core structure andthe shell structure and the radii of both the core structure and the shell structure are adjustable; and the materials of the gate dielectric layer, the gate electrode, the source region and the drain region are adjustable. Due to the adoption of the insulating core structure, the off-current of the traditional nano-wire transistor can be reduced effectively, and the current on-off ratio of the devices can be increased. The threshold voltage shifting and the drain induced barrier lowering of the nano-wire field effect transistor are less affected by the short channel effect, and the size reducing performance of the nano-wire field effect transistor is more excellent.

Description

technical field

[0001] The invention relates to a device for semiconductor integrated circuits, in particular to a nanowire field effect transistor. Background technique

[0002] Manufacturing high-speed, low-power semiconductor devices is the driving force for the development of the semiconductor industry. Planar process field effect transistors are limited by the short channel effect and the increase of gate current in the trend of scaling down. New non-planar device structures have been proposed, including silicon-on-insulator, double-gate, triple-gate, and nanowire field-effect transistors. Among them, the nanowire field effect transistor can provide a high current switching ratio, and is less affected by the short channel effect and the leakage-induced barrier lowering effect. On the basis of existing nanowire field effect transistors, it is of great significance to further increase the current switching ratio and improve the size reduction performance for the manufac...

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