Manufacturing method of wiring substrate and semiconductor device

Abstract

The present invention provides a method for forming a wiring having a minute shape on a large substrate with a small number of steps, and further a wiring substrate formed by the method. Moreover, the present invention provides a semiconductor device in which cost reduction and throughput improvement are possible due to the small number of steps and reduction of materials and which has a semiconductor element with a minute structure, and further a manufacturing method thereof. According to the present invention, a composition including metal particles and organic resin is irradiated with laser light and a part of the metal particles is baked to form a conductive layer typified by a wiring, an electrode or the like over a substrate. Further, a semiconductor device having the baked conductive layer as a wiring or an electrode is formed.

Description

BACKGROUND OF THE PRESENT INVENTION[0001]1. Field of the Present Invention[0002]The present invention relates to a wiring substrate and a semiconductor device having a semiconductor element formed by a droplet discharging method typified by an ink-jet method, and further manufacturing methods thereof.[0003]2. Description of the Related Art[0004]Conventionally, an active matrix driving type display panel or semiconductor integrated circuit including a semiconductor element typified by a thin film transistor (hereinafter, TFT) or a MOS transistor is formed by patterning each thin film with light-exposure process (hereinafter, a photolithography process) using a photomask.[0005]In the photolithography process, resist is applied to a whole substrate, pre-baked, then the substrate is irradiated with ultraviolet rays or the like using a photomask and a resist pattern is formed by development. After that, a thin film existing outside a portion to be a film pattern or a wiring (a film of a ...

AI Technical Summary

Benefits of technology

[0011]Moreover, it is another object of the present invention to provide a semiconductor device in which cost reduction and throughput improvement are possible due to the small number of steps and reduction of materials and which has a semiconductor element with a minute structure, and further a manufacturing method thereof.

[0016]As the composition remaining on one side or opposite sides of the conductive layer, metal particles are dispersed in organic resin serving as a solvent. Accordingly, the composition is conductive or insulative depending on the density of metal particles. In other words, the composition provided on a side of the conductive layer is conductive when the density of metal particles is high and the contact area of particles is large. On the other hand, when the density of metal particles is low and the periphery of metal particles is coated with organic resin, the composition remaining on one side or opposite sides of the conductive layer is insulative. Thus, when the composition remaining on one side or opposite sides of the conductive layer is insulative, only the conductive layer irradiated with laser light serves as a wiring or an electrode. Therefore, a stable conductive layer that is resistant to falling down can be formed even when the conductive layer whose aspect ratio is large (longitudinal length>lateral length) is adopted. The coverage of an insulating layer or a semiconductor layer to be formed later can be improved and thus, a highly reliable semiconductor element can be formed.

[0029]According to the present invention, a portion of a composition including metal particles and organic resin is directly irradiated with a laser beam to bake the metal particles, thereby forming a wiring having a minute and narrow width without using a photo mask. In addition, the width of the laser beam is made narrow and a part of the composition is irradiated with the laser beam; therefore, micro fabrication of a film-pattern formed by a droplet-discharging method is possible and a semiconductor element having a minute structure can be formed. Moreover, a semiconductor element having a short channel length can be formed by using the conductive layer as a gate electrode. Therefore, a semiconductor device in which a semiconductor element that operates at high speed is integrated with high density can be formed.

[0031]When a droplet discharging method is employed in forming a film pattern, a droplet can be discharged onto an arbitrary position by changing a relative position of a nozzle that is a discharge opening of a droplet including its film material and a substrate. In addition, a thickness and a width of a pattern to be formed can be adjusted depending on a nozzle diameter, the amount of droplets to be discharged, and a relative relationship between movement speed of a nozzle and that of a substrate to be provided with a discharged droplet. Accordingly, a film pattern can be formed in a desired portion with high accuracy by discharging even over a large substrate having a side of 1 m to 2 m or more. Yield can be improved because misalignment with an adjacent film pattern is not caused. As a result, a semiconductor device can be manufactured with the small number of steps and with high yield.

[0032]Moreover, a liquid crystal television and an EL television having a semiconductor device that is formed according to the above described manufacturing steps can be manufactured at low cost with high throughput and yield.

Problems solved by technology

However, when forming a wiring or a film-pattern using a conventional photolithography process, almost all materials of the wiring or the film pattern and a resist material become wasted and the number of steps of forming the wiring or a mask pattern becomes large; therefore throughput is decreased.

A light-exposure apparatus used in the photolithography process has difficulty in exposing a large substrate to light at once.

Accordingly, a manufacturing method of a semiconductor device using a large substrate needs a plurality of times of light-exposure, which leads to misalignment with an adjacent pattern and reduction in yield.

However, in this case, the tip of the discharge opening is clogged with the material solution because a composition of the material solution is attached thereto, dried or solidified therein, and thus it is difficult to discharge a constant amount of material solution continuously or stably.

Consequently, there is a problem in that throughput or yield of a semiconductor device using the semiconductor element is reduced.

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