The invention provides a piezoelectric-modulation vertical cavity semiconductor laser structure comprising a single crystal substrate (1), a buffering layer (2), an n-type DBR reflecting mirror (3), a carrier lower limiting layer (4), a gain region (5), a carrier upper limiting layer (6), a photoelectric limiting layer (7), a p-type DBR reflecting mirror (8), an ohmic electrode contact layer (9), a first transparent electrode (10), two second metal layers (11), an SiO2 antireflection film (12), two SiN insulation layers (13), a second transparent electrode (14), two third metal layers (15) and a first metal layer (16). During powering operation, the cavity of a vertical cavity semiconductor laser deforms to different extents through the piezoelectric characteristics of the SiO2 antireflection film, and the piezoelectric-modulation of the output power of the vertical cavity semiconductor laser can be implemented.