Lossless screening method and device of radiation resisting capacity of GaN light-emitting diode

Abstract

The invention provides a lossless screening method and device of the radiation resisting capacity of a GaN light-emitting diode. The method comprises the steps that the output luminous power Pout and 1 / f noise amplitude B of a random subsample device are acquired; the output luminous power Pout' of the random subsample device after a radiation experiment is acquired; the degradation amount delta Pout is calculated to be equal to Pout'-Pout based on Pout and Pout'; the measured 1 / f noise amplitude B serves as an information parameter to output the light power degradation amount delta Pout to serve as a radiation performance parameter, a linear regression method is adopted for setting up a linear regression equation (the formula is shown the specification) between B and delta Pout, a coefficient vector (the formula is shown in the specification) of delta Pout and the information parameter B in the linear regression equation is calculated, and a lossless screening regression prediction equation between the information parameter B and the radiation performance parameter (the formula is shown in the specification) is set up; the radiation performance of a single device is predicted through the lossless screening regression prediction equation. According to the method and device, on the premise that components and parts are not damaged, the GaN light-emitting diode components and parts can be accurately and efficiently screened.

Description

technical field

[0001] The invention relates to the field of microelectronics technology, in particular to a method and device for non-destructive screening of GaN light-emitting diodes against radiation. Background technique

[0002] Gallium nitride, as the third-generation semiconductor material, has always been the main material for blue light-emitting diodes; especially in recent years, with the further development of aerospace technology and electronic technology, GaN light-emitting diodes have high luminous efficiency and strong radiation resistance. And other advantages are widely used in special environments such as military, aerospace, nuclear technology; GaN light-emitting diode LED devices work in space, and are inevitably irradiated by various rays in space, thereby attenuating their performance, so work under these conditions The stability of GaN light-emitting diode LED devices has been paid much attention.

[0003] Electronic components used in aerospace need...

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