Lossless screening method and device of radiation resisting capacity of GaN light-emitting diode

Abstract

The invention provides a lossless screening method and device of the radiation resisting capacity of a GaN light-emitting diode. The method comprises the steps that the output luminous power Pout and 1 / f noise amplitude B of a random subsample device are acquired; the output luminous power Pout' of the random subsample device after a radiation experiment is acquired; the degradation amount delta Pout is calculated to be equal to Pout'-Pout based on Pout and Pout'; the measured 1 / f noise amplitude B serves as an information parameter to output the light power degradation amount delta Pout to serve as a radiation performance parameter, a linear regression method is adopted for setting up a linear regression equation (the formula is shown the specification) between B and delta Pout, a coefficient vector (the formula is shown in the specification) of delta Pout and the information parameter B in the linear regression equation is calculated, and a lossless screening regression prediction equation between the information parameter B and the radiation performance parameter (the formula is shown in the specification) is set up; the radiation performance of a single device is predicted through the lossless screening regression prediction equation. According to the method and device, on the premise that components and parts are not damaged, the GaN light-emitting diode components and parts can be accurately and efficiently screened.

Description

technical field [0001] The invention relates to the field of microelectronics technology, in particular to a method and device for non-destructive screening of GaN light-emitting diodes against radiation. Background technique [0002] Gallium nitride, as the third-generation semiconductor material, has always been the main material for blue light-emitting diodes; especially in recent years, with the further development of aerospace technology and electronic technology, GaN light-emitting diodes have high luminous efficiency and strong radiation resistance. And other advantages are widely used in special environments such as military, aerospace, nuclear technology; GaN light-emitting diode LED devices work in space, and are inevitably irradiated by various rays in space, thereby attenuating their performance, so work under these conditions The stability of GaN light-emitting diode LED devices has been paid much attention. [0003] Electronic components used in aerospace need...

AI Technical Summary

Problems solved by technology

This method has two limitations: one is that the detection cost is high, which is not conducive to timely feedback information, thereby prolonging the development and production cycle; the other is that the detection itself is destructive, and the final screened devices have been irradiated. so that the device lifetime itself has been reduced

The key to the above-mentioned multiple regression analysis method is to select sensitive parameters before irradiation and estimate device performance parameters after irradiation. The former sensitive parameters are called information parameters, and the device performance parameters to be estimated after irradiation are called Radiation performance parameters. In the prior art, the output optical power and reverse leakage current before irradiation are usually used as information parameters, and the output optical power degradation after irradiation is used as radiation performance parameters. The regression prediction equation obtained by this method is not accurate enough. , cannot directly and sensitively reflect the defect change of the device after irradiation, so that the screened devices may contain devices with defects

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