Bulk acoustic wave resonator and manufacturing method thereof

A technology of bulk acoustic wave resonators and manufacturing methods, applied in the direction of electrical components, impedance networks, etc., to achieve the effects of suppressing energy loss, reducing the possibility of stress accumulation and electrostatic discharge, and enhancing reliability

Active Publication Date: 2019-08-23
ROFS MICROSYST TIANJIN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the film bulk acoustic resonator with this structure still has many defects and a large room for improvement in terms of electromechanical performance and reliability.

Method used

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  • Bulk acoustic wave resonator and manufacturing method thereof
  • Bulk acoustic wave resonator and manufacturing method thereof
  • Bulk acoustic wave resonator and manufacturing method thereof

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Embodiment Construction

[0040] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0041] According to an embodiment of the present invention, a bulk acoustic wave resonator is provided, including: a substrate, a lower electrode disposed above the substrate, a piezoelectric layer disposed above the lower electrode, an upper electrode disposed above the piezoelectric layer, and a An acoustic mirror between the substrate and the lower electrode; where the upper electrode, the piezoelectric layer and the lower electrode overlap each other in the thickness direction to form an e...

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Abstract

The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof. The bulk acoustic wave resonator includes: an air gap outside an effective piezoelectric region, the air gapbeing located between an upper electrode and a piezoelectric layer and / or between the piezoelectric layer and a substrate, and the air gap covering an end portion of a lower electrode close to the airgap or the air gap being connected to an end portion of the lower electrode, wherein the air gap is provided with a first end close to the effective piezoelectric area, and at least part of the uppersurface, starting from the first end, of the air gap is an arc-shaped upper surface. According to the bulk acoustic wave resonator, the Q value, the effective electromechanical coupling coefficientsK2t and eff and the anti-static discharge capacity of the device are improved, meanwhile, the stress in electrodes of the device is reduced, and then the performance and the reliability of the resonator are improved.

Description

technical field [0001] The present invention relates to a bulk wave resonator, in particular to a resonator capable of improving the quality factor (Q), effective electromechanical fusion coefficient (K 2 t,eff ) and electrostatic discharge (ESD) resistant bulk acoustic wave resonator and manufacturing method thereof. Background technique [0002] The thin film bulk wave resonator made by the longitudinal resonance of the piezoelectric film in the thickness direction has become a feasible substitute for surface acoustic wave devices and quartz crystal resonators in computer communication and high-speed serial data applications. RF front-end bulk wave filter / duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, large power capacity, and strong anti-electrostatic discharge (ESD) capability. High frequency thin film bulk wave oscillator with ultra-low frequency temperature drift, low phase noise, low power consumption and wid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/05H03H9/17H03H3/02
CPCH03H3/02H03H9/02015H03H9/02047H03H9/02086H03H9/0504H03H9/173H03H2003/021H03H2003/023H03H9/02118H03H9/02031H03H9/02133H03H9/132H03H9/175H03H9/176H03H2003/025
Inventor 庞慰张孟伦孙晨
Owner ROFS MICROSYST TIANJIN CO LTD
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