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Bulk acoustic wave resonator and manufacturing method thereof

一种体声波谐振器、制造方法的技术，应用在阻抗网络、电气元件等方向，达到降低应力积累和静电放电的可能性、可靠性增强、抑制能量损耗的效果

Active Publication Date: 2020-09-08
ROFS MICROSYST TIANJIN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the film bulk acoustic resonator with this structure still has many defects and a large room for improvement in terms of electromechanical performance and reliability.

Method used

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  • Bulk acoustic wave resonator and manufacturing method thereof
  • Bulk acoustic wave resonator and manufacturing method thereof
  • Bulk acoustic wave resonator and manufacturing method thereof

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Embodiment Construction

[0040] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0041] According to an embodiment of the present invention, a bulk acoustic wave resonator is provided, including: a substrate, a lower electrode disposed above the substrate, a piezoelectric layer disposed above the lower electrode, an upper electrode disposed above the piezoelectric layer, and a An acoustic mirror between the substrate and the lower electrode; where the upper electrode, the piezoelectric layer and the lower electrode overlap each other in the thickness direction to form an e...

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Abstract

The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and / or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K2t,eff) and improving the electrostatic discharge (ESD) immunity.

Description

technical field [0001] The present invention relates to a bulk wave resonator, in particular to a resonator capable of improving the quality factor (Q), effective electromechanical fusion coefficient (K 2 t,eff ) and electrostatic discharge (ESD) resistant bulk acoustic wave resonator and manufacturing method thereof. Background technique [0002] The thin film bulk wave resonator made by the longitudinal resonance of the piezoelectric film in the thickness direction has become a feasible substitute for surface acoustic wave devices and quartz crystal resonators in computer communication and high-speed serial data applications. RF front-end bulk wave filter / duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, large power capacity, and strong anti-electrostatic discharge (ESD) capability. High frequency thin film bulk wave oscillator with ultra-low frequency temperature drift, low phase noise, low power consumption and wid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/05H03H9/17H03H3/02
CPCH03H3/02H03H9/02015H03H9/02047H03H9/02086H03H9/0504H03H9/173H03H2003/021H03H2003/023H03H9/02118H03H9/02031H03H9/02133H03H9/132H03H9/175H03H9/176H03H2003/025
Inventor 庞慰张孟伦孙晨
Owner ROFS MICROSYST TIANJIN CO LTD
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