Film bulk wave resonator and method for raising quality factor of film bulk wave resonator

A quality factor, thin-film technology, applied in the field of resonators, which can solve the problems of reducing the Q value of resonators

Active Publication Date: 2014-02-26
ROFS MICROSYST TIANJIN CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0016] Aiming at the problem in the related art that the Q value of the resonator is reduced due to the acoustic wave leakage of the transverse mode in the film bulk wave resonator and the energy loss caused by the electrode material, the present invention proposes a film bulk wave resonator and a method for improving its quality factor The method can reduce the energy loss caused by acoustic wave leakage and electrode materials, and improve the Q value of the thin film bulk wave resonator

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  • Film bulk wave resonator and method for raising quality factor of film bulk wave resonator

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Embodiment Construction

[0059] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0060] According to an embodiment of the present invention, a thin film bulk wave resonator is provided.

[0061] A thin film bulk wave resonator according to an embodiment of the present invention may include:

[0062] first electrode;

[0063] a piezoelectric layer located above the first electrode;

[0064] a second electrode located above the piezoelectric layer;

[0065] Wherein, there is at least one gap between the second electrode and the first electrode, at least part of the gap c...

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Abstract

The invention discloses a film bulk wave resonator and a method for raising the quality factor of the film bulk wave resonator. The film bulk wave resonator comprises a first electrode, a piezoelectric layer arranged on the top of the first electrode, and a second electrode arranged on the top of the piezoelectric layer. At least one gap is left between the second electrode and the first electrode, and the effective area of the film bulk wave resonator is at least partially covered with the gap, wherein the effective area is an area where the first electrode, the second electrode and the piezoelectric layer overlap with each other in the thickness direction. According to the invention, the at least one gap is left between the second electrode and the first electrode of the film bulk wave resonator, transverse mode sound wave leakage and energy loss caused by an electrode material are reduced, the Q value of the film bulk wave resonator is increased, and the Q value is greater than 2000.

Description

technical field [0001] The present invention relates to the field of resonators, and in particular, to a thin film bulk wave resonator and a method for improving its quality factor. Background technique [0002] At present, a film bulk wave resonator (FBAR, Film Bulk Acoustic Resonator, hereinafter referred to as a resonator) made of piezoelectric film in the thickness direction (ie longitudinal resonance) has been widely used. In the field of communication, it has become a feasible solution to replace surface acoustic wave resonators and quartz crystal resonators with thin film bulk wave resonators. Filters and duplexers composed of thin film bulk wave resonators can provide better filtering characteristics, for example, more Low insertion loss, large power capacity, etc., due to these advantages, thin film bulk wave resonators are widely used in mobile phones and other wireless terminal equipment. Moreover, since the thin film bulk wave resonator can meet the requirements...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H3/02
Inventor 张浩张孟伦庞慰张代化
Owner ROFS MICROSYST TIANJIN CO LTD
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