GaN-based flip-chip light-emitting diode with double reflecting layers and preparation method thereof

Abstract

The invention discloses a GaN-based flip-chip light-emitting diode with double reflecting layers and a preparation method thereof, which adopts a dual-reflection structure with the combination of a distributed Bragg reflecting layer and a metal reflecting layer, fully plays the excellent reflectivity of the reflecting layers and greatly improves the luminous efficiency of the light-emitting diode; and an open structure is produced in the distributed Bragg reflecting layer for filling the metal reflecting layer, thereby forming the electric conduction function and avoiding the occurrence of phenomenon that the reflectivity of the metal reflecting layer is reduced due to mutual diffusion of the metal reflecting layer in the traditional flip-chip light-emitting diode and other metal electrodes.

Description

technical field [0001] The invention relates to a gallium nitride-based light-emitting diode, in particular to a gallium nitride-based flip-chip light-emitting diode with double reflection layers and a preparation method thereof. Background technique [0002] Light-emitting diodes have the advantages of small size, high brightness, low power consumption, and long life. With the continuous improvement of the light efficiency of power-type GaN-based LEDs, it is the general trend for LED lamps to replace traditional lighting sources. The efficiency is low, so high-brightness LEDs are still difficult to apply on a large scale. [0003] Chinese invention patent (publication number CN1622349A) discloses a flip-chip light-emitting diode and its manufacturing method. , an ohmic contact layer formed of tin oxide of at least one of fluorine, phosphorus, and arsenic, and a reflective layer formed of a reflective material; the invention uses a conductive oxide electrode structure with ...

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Problems solved by technology

[0002] Light-emitting diodes have the advantages of small size, high brightness, low power consumption, and long life. With the continuous improvement of the light efficiency of power-type GaN-based LEDs, it is the general trend for LED lamps to replace traditional lighting sources. However, the production cost of high-brightness LEDs is high. Low efficiency, so high-brightness LEDs are still difficult to promote and apply on a large scale

[0003] Chinese invention patent (publication number CN1622349A) discloses a flip-chip light-emitting diode and its manufacturing method. , fluorine, phosphorus, arsenic at least one ohmic contact layer formed of tin oxide, and a reflective layer formed by a reflective material; the invention uses a conductive oxide electrode structure with low surface resistivity and high carrier concentration, The current-voltage characteristics and durability are improved; however, the invention uses a single metal film as the light reflection layer, and the metal film will still absorb part of the light, and the insulating dielectric film as a barrier layer may still have a diffusion effect with the reflective metal film or other electrode metals , leading to a decrease in the reflectivity of the metal reflective layer

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