Preparation method and application of MXene material

Abstract

The invention provides a preparation method and application of an MXene material, and the preparation method comprises the following steps: 1) sintering a mixture comprising an M source, an A source, a nitrogen source and a carbon source to obtain a precursor Mn + 1AXn; (2) the precursor is subjected to etching treatment, the MXene material Mn + 1XnTx is obtained, the etching treatment time is 1-3 h, a solution for etching treatment comprises a hydrogen fluoride solution with the mass fraction being 10-40%, and the temperature is 25-60 DEG C; the MXene material obtained by the preparation method shows strong absorption characteristics in different frequency bands, and can better meet the requirements on wave-absorbing materials at the present stage.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of materials, in particular to a preparation method and application of MXene material. BACKGROUND

[0002] As an important carrier of energy and information transmission, electromagnetic waves have the advantages of fast transmission speed, high efficiency, rich frequency spectrum resources, strong information carrying capacity, and controllable penetration and directivity, and are widely used in communication, radar, electronic equipment and other fields. The rapid development of electromagnetic wave technology not only promotes social progress, but also brings significant electromagnetic pollution problems, and gives rise to higher demands for stealth technology in modern military fields.

[0003] Wave-absorbing material is a kind of material that can absorb or weaken the electromagnetic wave energy received by the surface, thereby reducing electromagnetic wave interference. MXene (such as Ti3C2T x , Mo2CT x ) as a new type of two-dimensional transition metal carbide / nitride material, with its unique layered structure, high conductivity and controllable surface chemical properties, has certain advantages in the field of electromagnetic wave absorption.

[0004] However, the wave-absorbing performance of the MXene material at the present stage still has limitations, and it is difficult to exhibit strong absorption characteristics in different frequency bands, which cannot meet the differentiated needs of wave-absorbing materials in different fields. SUMMARY

[0005] The present application provides a preparation method of MXene material, which effectively improves the wave-absorbing performance of MXene material in different frequency bands through a special process.

[0006] The present application also provides a MXene material obtained by the above preparation method, so the material has good wave-absorbing performance.

[0007] The present application also provides an equipment comprising an equipment substrate and a wave-absorbing coating layer arranged on at least part of the surface of the equipment substrate, wherein the wave-absorbing coating layer comprises the above MXene material, so the equipment has the advantage of strong wave-absorbing performance.

[0008] The present application provides a preparation method of MXene material, comprising the following steps:

[0009] 1) sintering treatment is performed on a mixture comprising M source, A source, nitrogen source and carbon source to obtain a precursor M n+1 AX n ;

[0010] 2) etching treatment is performed on the precursor to obtain MXene material M n+1 X n Tx The etching treatment is performed for 1-3 hours, and the etching treatment solution comprises hydrogen fluoride solution with a mass fraction of 10-40% and has a temperature of 25-60°C.

[0011] M comprises at least one of Ti, V, Nb, Mo and Zr, n is 1-5, A comprises at least one of group IIIA and group IVA elements, X comprises C and N, T comprises at least one of -F, -OH, -H, -O and -Cl functional groups, and x>0.

[0012] The etching treatment is performed for 2 hours.

[0013] The preparation method is as described above, and the precursor comprises one of Ti3AlC 2-y N y , Ti2AlC 1-y N y and Nb2AlC 1-y N y , wherein 0

[0014] The preparation method is as described above, and the MXene material comprises one of Ti3C 2-y N y T x , Ti2C 1-y N y T x and Nb2C 1-y N y T x , wherein 0

[0015] The preparation method is as described above, and the Ti3C 2-y N y T x MXene material comprises one of Ti3C 1.5 N 0.5 T x , Ti3C 1.2 N 0.8 T x , Ti3CNT x .

[0016] The preparation method is as described above, and the sintering treatment comprises the following steps: the mixture comprising the M source, the A source, the nitrogen source and the carbon source is kept at 1400-1500°C for 1-3 hours to obtain the precursor.

[0017] The preparation method is as described above, and the etching treatment further comprises the following step: the product after the etching treatment is subjected to PH adjustment treatment to obtain the MXene material M n+1 X nT x , the PH of the PH adjusting treatment is 6-7.

[0018] The application also provides a MXene material obtained by the preparation method of any one of the above.

[0019] The MXene material as described above has a dielectric constant greater than 0, a complex magnetic permeability tangent greater than 0, and a minimum reflection loss of -10 to -69.66 dB within a thickness of 5 mm under an electromagnetic wave of 2-18 GHz.

[0020] The application also provides an equipment comprising an equipment substrate and a wave-absorbing coating layer arranged on at least part of the surface of the equipment substrate, wherein the wave-absorbing coating layer comprises the MXene material of any one of the above.

[0021] The preparation method of the MXene material provided by the application comprises the following steps: sintering treatment is performed on a mixture comprising an M source, an A source, a nitrogen source and a carbon source to obtain a precursor; and then etching treatment is performed on the precursor by using a hydrogen fluoride solution with a mass fraction of 10-40%, and the etching time is controlled to be 1-3 h and the temperature is controlled to be 25-60℃, so that the MXene material obtained has strong absorption characteristics in different frequency bands, and can better meet the current demand for wave-absorbing materials. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 Fig. 1 is a SEM scanning diagram (a) and an XPS full spectrum diagram (b) of the MXene material of Example 1 of the application;

[0023] Figure 2 Fig. 3 is an XRD spectrum of the MXene material of Example 1, Example 4 and Example 5 of the application;

[0024] Figure 3 Fig. 4 is a tangent curve diagram (a) of electromagnetic parameters of a coaxial ring prepared from the MXene material of Example 1 of the application in a frequency band of 2-18 GHz, and a reflection loss diagram (b) under different sample thicknesses;

[0025] Figure 4 Fig. 5 is a tangent curve diagram (a) of electromagnetic parameters of a coaxial ring prepared from the MXene material of Example 2 of the application in a frequency band of 2-18 GHz, and a reflection loss diagram (b) under different sample thicknesses;

[0026] Figure 5 Fig. 6 is a tangent curve diagram (a) of electromagnetic parameters of a coaxial ring prepared from the MXene material of Example 3 of the application in a frequency band of 2-18 GHz, and a reflection loss diagram (b) under different sample thicknesses;

[0027] Figure 6The SEM image of the MXene material of Example 4 of the present application (a) and the reflection loss diagram of the coaxial ring prepared from the MXene material of Example 4 of the present application under different sample thicknesses in the frequency range of 2-18 GHz (b);

[0028] Figure 7 The SEM image of the MXene material of Example 5 of the present application (a) and the reflection loss diagram of the coaxial ring prepared from the MXene material of Example 5 of the present application under different sample thicknesses in the frequency range of 2-18 GHz (b). DETAILED DESCRIPTION

[0029] In order to make the objectives, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below in combination with the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0030] The inventors have researched the structure and preparation method of the wave-absorbing material and found that although the introduction of nitrogen elements into the MXene material can improve the wave-absorbing performance of the MXene material to a certain extent, the etching degree of the precursor also has a certain influence on the wave-absorbing performance of the MXene material.

[0031] Based on this, the present application provides a preparation method of a MXene material, comprising the following steps:

[0032] sintering treatment is performed on the mixture comprising a M source, an A source, a nitrogen source and a carbon source to obtain a precursor M n+1 AX n ;

[0033] 2) etching treatment is performed on the precursor to obtain a MXene material M n+1 X n T x , wherein the etching treatment time is 1-3h, the etching treatment solution comprises a hydrogen fluoride solution with a mass fraction of 10-40%, and the temperature is 25-60℃;

[0034] , wherein M comprises at least one of Ti, V, Nb, Mo and Zr, n is 1-5, A comprises at least one of the main group elements of ⅢA and ⅣA, X comprises C and N, T comprises at least one of the functional groups of -F, -OH, -H, -O and -Cl, and x>0.

[0035] In detail, M is a transition metal element in the MXene material, which is a core component of the MXene material, A plays a supporting role in the precursor structure and is etched later in the preparation process, and T is a termination group in the MXene material, which is introduced after etching treatment and can stabilize the chemical structure of the MXene material. The M source, the A source, the nitrogen source, and the carbon source represent compounds containing M elements, A elements, nitrogen elements, and carbon elements, respectively. For example, when M is titanium, the titanium source can be at least one of metallic titanium and titanium carbide, the A source can be at least one of metallic aluminum, metallic silicon, and metallic tin, the nitrogen source can be at least one of aluminum nitride and titanium nitride, and the carbon source can be at least one of elemental carbon and titanium carbide.

[0036] It is worth mentioning that aluminum nitride can be used as a nitrogen source and as an A source to provide aluminum elements.

[0037] In the preparation method of the present application, different stoichiometric products can be obtained by adjusting the addition ratio of different raw material powders. For example, when the molar ratio of aluminum nitride, metallic titanium, metallic aluminum, and elemental carbon is 0.5:3:0.6:1.5, the precursor with the structure of Ti3AlC2N can be obtained after sintering treatment, and the MXene material with the structure of Ti3C2NT can be obtained after etching treatment on the precursor. 1.5 N 0.5 1.5 T 0.5 x

[0038] Sintering treatment is a high-temperature solid-phase reaction that sinters a mixture containing an M source, an A source, a nitrogen source, and a carbon source to form a MAX phase precursor with high purity and high crystallinity, which helps to perform etching; etching treatment is a chemical etching process that removes the A layer in the precursor to form a two-dimensional layered structure with high specific surface area.

[0039] Through the above etching treatment conditions, the A layer of the MXene material can be effectively removed within 1-3 hours, and a more suitable interlayer spacing and (002) crystal plane spacing can be obtained, thereby enhancing electromagnetic wave loss under the interface and multiple reflections, and further effectively improving the absorption performance of the MXene material to electromagnetic waves.

[0040] In addition, the etching process introduces a rich functional group T into the MXene material, including at least one of -F, -OH, -H, -O, and -Cl.

[0041] ​​​The nitrogen source can introduce nitrogen elements into the MXene material, and the solid-solution N elements can cause asymmetric spin movement of electrons in the M site atomic orbital, so that the carbon nitride MXene exhibits magnetism under the action of a magnetic field, and then achieves good impedance matching under the synergistic action of dielectric loss and magnetic loss, thereby promoting effective absorption of electromagnetic waves.

[0042] Therefore, the preparation method of the present application is beneficial to promote the polarization loss of the MXene material, thereby exhibiting a strong absorption effect on electromagnetic waves of different frequency bands.

[0043] Further, the inventors found that when the etching time is 2h, the wave absorption performance of the MXene material is more excellent.

[0044] In detail, when the etching time is 2h, the number of defects and surface functional groups in the MXene material is more appropriate, which is beneficial to promote the interface polarization and dipole polarization process, thereby effectively improving the dielectric constant of the MXene material; in addition, the etching time of 2h can also make the vacancy number of N elements and M elements more regular, thereby improving the magnetic permeability of the MXene material.

[0045] Therefore, when the etching time is controlled to be 2h, the dielectric-magnetic performance of the MXene material can achieve higher impedance matching, thereby further promoting the absorption of electromagnetic waves.

[0046] In the specific embodiments of the present application, the precursor includes one of Ti3AlC 2-y N y , Ti2AlC 1-y N y and Nb2AlC 1-y N y , wherein 0

[0047] Specifically, when the structure of the precursor is selected as above, that is, X in M n+1 AX n in the precursor is C and N, A is Al, and M is Ti or Nb, when the proportion of elements is in the above range, it is more in line with the thermodynamic stability, and after etching treatment, the MXene material with more stable structure, higher purity and stronger wave absorption performance can be obtained.

[0048] In the specific embodiments of the present application, the MXene material includes one of Ti3C 2-y N y T x , Ti3C 1.2 N 0.8 T x , Ti3CNT x , wherein 0

[0049] Specifically, when the MXene material is selected as above, that is, the MXene material M n+1 X n T x X in the above formula is C and N, M is Ti, T is at least one of -F, -OH, -H, -O, -Cl, x>0, and when the ratio of elements is in the above range, the absorption performance of the MXene material to electromagnetic waves is further improved.

[0050] In a specific embodiment of the present application, the MXene material includes Ti3C 1.5 N 0.5 T x , Ti3C 1.2 N 0.8 T x , Ti3CNT x .

[0051] Specifically, when the MXene material is selected as above, the ratio between elements is more suitable, more in line with thermodynamic stability, more conducive to introducing magnetism and improving impedance matching, so that the MXene material exhibits stronger wave-absorbing performance to electromagnetic waves.

[0052] In a specific embodiment, the sintering process includes the following steps: the mixture of M source, A source, nitrogen source and carbon source is kept at 1400-1500℃ for 1-3h to obtain a precursor.

[0053] In detail, when the sintering temperature and time are controlled in the above range, the side reactions that may exist in the sintering process can be reduced, and the appropriate defects of the precursor can be effectively maintained, further improving the quality of the MXene material.

[0054] In a specific embodiment, after the etching process, the following step is further included: the product after the etching process is subjected to PH adjustment treatment to obtain the MXene material, and the PH after the PH adjustment treatment is 6-7.

[0055] In detail, when the PH of the MXene is controlled in the above range, the acid that may exist in the MXene material during the etching process can be effectively removed, further improving the purity and structural stability of the MXene material.

[0056] The present application also provides a MXene material obtained by the above preparation method, so that the MXene material can have high absorption performance to electromagnetic waves of different wavebands.

[0057] In a specific embodiment of the present application, the dielectric constant of the MXene material under 2-18GHz electromagnetic waves is greater than 0, the tangent of complex magnetic permeability is greater than 0, and the minimum reflection loss is -10 to -69.66dB within 5mm thickness.

[0058] In detail, the average value of the dielectric constant tangent indicates the efficiency of the material in converting electromagnetic energy into thermal energy, the average value of the complex magnetic permeability tangent indicates the magnetic loss capacity of the material, and the minimum reflection loss indicates the maximum absorption capacity of the material for electromagnetic waves. When the average value of the dielectric constant tangent remains in the above range, it indicates that the MXene material can synergistically convert electromagnetic energy through dielectric loss and magnetic loss, and the wave absorption performance of the MXene material will be more advantageous; the minimum reflection loss is related to the thickness of the material and the frequency of the electromagnetic wave. When the minimum reflection loss of the MXene material within the thickness of 5mm in this application under electromagnetic waves of any frequency between 2-18GHz is within the above range, the wave absorption performance can be better performed at the corresponding electromagnetic wave frequency.

[0059] The present application also provides an equipment, including an equipment substrate and an absorbing coating provided on at least a portion of the surface of the equipment substrate, wherein the absorbing coating includes the aforementioned MXene material.

[0060] In detail, the equipment of the present application can be any equipment in the electronic field or the military field that has a need for wave absorption. For example, the equipment can be a warship, which is composed of a warship substrate and a wave-absorbing coating provided on the surface. Since the wave-absorbing coating contains the MXene material of the present application, the equipment of the present application has a wider range of wave-absorbing performance.

[0061] The following is a detailed introduction to the preparation method of the MXene material provided in this application through specific examples.

[0062] Unless otherwise specified, the reagents, materials, and instruments used in the following examples are conventional reagents, conventional materials, and conventional instruments in the art and can be obtained commercially. The reagents involved can also be synthesized by conventional methods in the art.

[0063] Example 1

[0064] The preparation method of the MXene material in this embodiment includes the following steps:

[0065] 1) Aluminum nitride, titanium metal, aluminum metal and carbon element were mixed uniformly in a molar ratio of 0.5:3:0.6:1.5, and then heated to 1430 ° C for sintering, and the holding time was 1 h to obtain the precursor Ti3AlC 1.5 N 0.5 ;

[0066] 2) The precursor was etched with a 20% HF aqueous solution for 2 h, stirred and heated in a 50 ° C water bath, and then the etched precursor was washed with water to a pH of 6.5, and then dried for 48 h to obtain the MXene material Ti3C 1.5 N 0.5 T x .

[0067] Example 2

[0068] The preparation method of the MXene material of the present example is basically the same as that of Example 1, except that the molar ratio of aluminum nitride, metal titanium, metal aluminum and carbon element is replaced by 0.8:3:0.3:1.2, and the chemical composition of the precursor is Ti3AlC 1.2 N 0.8 The MXene material obtained by etching is Ti3C 1.2 N 0.8 T x .

[0069] Example 3

[0070] The preparation method of the MXene material of the present example is basically the same as that of Example 1, except that the molar ratio of aluminum nitride, metal titanium, metal aluminum and carbon element is replaced by 1:3:0.1:1, and the chemical composition of the precursor is Ti3AlCN, and the MXene material obtained by etching is Ti3CNT x .

[0071] Example 4

[0072] The preparation method of the MXene material of the present example is basically the same as that of Example 1, except that the etching time is 1h, and the MXene material Ti3C 1.5 N 0.5 T x is obtained, wherein the chemical composition of the precursor is Ti3AlC 1.5 N 0.5 .

[0073] Example 5

[0074] The preparation method of the MXene material of the present example is basically the same as that of Example 1, except that the etching time is 3h, and the MXene material Ti3C 1.5 N 0.5 T x is obtained, wherein the chemical composition of the precursor is Ti3AlC 1.5 N 0.5 .

[0075] Comparative Example 1

[0076] The preparation method of the MXene material of the present example is basically the same as that of Example 1, except that the etching time is 0.5h, and the MXene material Ti3C 1.5 N 0.5 T x is obtained, wherein the chemical composition of the precursor is Ti3AlC 1.5 N 0.5 .

[0077] Comparative Example 2

[0078] The preparation method of MXene material in this embodiment is basically the same as that in Example 1, except that the etching time is 3.5 h to obtain MXene material Ti3C 1.5 N 0.5 T x , where the chemical composition of the precursor is Ti3AlC 1.5 N 0.5 .

[0079] Test Example 1

[0080] 1. The MXene materials prepared in the examples were subjected to XRD, SEM, and EDS point scanning characterization tests to record the (002) crystal plane spacing, layered state, and residual aluminum content of the MXene materials.

[0081] Figure 1 (a) is the SEM scan image of the MXene material in Example 1 of the present application.

[0082] Figure 6 (a) is the SEM scan image of the MXene material in Example 4 of the present application.

[0083] Figure 7 (a) is the SEM scan image of the MXene material in Example 5 of the present application.

[0084] It can be seen from the above SEM scans that the MXene material of the present application has a more suitable layering effect.

[0085] Figure 1 (b) is the full XPS spectrum of the MXene material in Example 1 of the present application.

[0086] Depend on Figure 1 As shown in (b), the MXene material in Example 1 contains F, Ti, O, N, and C elements, but does not contain Al element, indicating that the etching conditions of this application can completely etch the MXene material.

[0087] Figure 2 These are the XRD patterns of the MXene materials of Examples 1, 4, and 5 of the present application.

[0088] Depend on Figure 2 It can be seen that the MXene material of the present application has a more suitable (002) crystal plane spacing.

[0089] 2、The MXene material prepared in the examples and comparative examples is respectively passed through a 200-mesh sieve to remove powders with relatively large particles, and then mixed with paraffin at a mass ratio of 1:1, and then pressed into a coaxial ring with a thickness of 2 mm. The electromagnetic parameters of the coaxial ring are measured by a vector network analyzer and a coaxial method, and the reflection loss RL, the dielectric constant tangent tanδ ε , the complex magnetic permeability tangent tanδ ε of the coaxial ring (i.e., the absorber) with different thicknesses in the S frequency band (2-4 GHz), the C frequency band (4-8 GHz), the X frequency band (8-12 GHz) and the Ku frequency band (12-18 GHz) are calculated according to the following formula:

[0090]

[0091] wherein, wherein Z in and Z0 represent the impedance of the interface and the free space respectively, f is the EMW frequency, d is the thickness of the absorber, the speed of light in vacuum c=3×108m / s. ε r and μ r represent the relative complex dielectric constant and the relative complex magnetic permeability respectively.

[0092] Figure 3 (a) in FIG. 1 is the dielectric constant tangent (tanδ ε ) and the complex magnetic permeability tangent (tanδ ε ) curve of the coaxial ring prepared from the MXene material of Example 1 in the present application in the 2-18 GHz frequency band.

[0093] Figure 3 (b) in FIG. 1 is the reflection loss graph of the coaxial ring prepared from the MXene material of Example 1 in the present application at different thicknesses.

[0094] Figure 4 (a) in FIG. 2 is the dielectric constant tangent (tanδ ε ) and the complex magnetic permeability tangent (tanδ ε ) curve of the coaxial ring prepared from the MXene material of Example 2 in the present application in the 2-18 GHz frequency band.

[0095] Figure 4 (b) in FIG. 2 is the reflection loss graph of the coaxial ring prepared from the MXene material of Example 2 in the present application at different thicknesses.

[0096] Figure 5 (a) in FIG. 3 is the dielectric constant tangent (tanδ ε ) and the complex magnetic permeability tangent (tanδ ε ) curve of the coaxial ring prepared from the MXene material of Example 3 in the present application in the 2-18 GHz frequency band.

[0097] Figure 5 (b) in FIG. 3 is a reflection loss diagram of the coaxial ring prepared from the MXene material of Example 3 of the present application at different thicknesses.

[0098] Figure 6 (b) in FIG. 4 is a reflection loss diagram of the coaxial ring prepared from the MXene material of Example 4 of the present application at different thicknesses.

[0099] Figure 7 (b) in FIG. 5 is a reflection loss diagram of the coaxial ring prepared from the MXene material of Example 5 of the present application at different thicknesses.

[0100] Table 1

[0101] Sample S-band (dB) C-band (dB) X-band (dB) Ku-band (dB) Example 1 -11.01 -58.46 -20.77 -19.74 Example 2 -14.05 -26.78 -55.71 -28.35 Example 3 -11.03 -51.99 -69.66 -50.64 Example 4 -10.18 -18.43 -11.07 -20.09 Example 5 >-10 -12.54 >-10 -42.88 Comparative Example 1 >-10 -12.01 -11.24 -15.78 Comparative Example 2 >-10 -11.45 >-10 -21.14

[0102] In combination with Figure 3 , Figure 4 , Figure 5 , Figure 6 (b) in FIG. 3, Figure 7 (b) in FIG. 4 and Table 1,

[0103] 1) It can be known from the comparative examples and the reference examples that the MXene material provided by the present application can realize strong absorption characteristics in different microwave frequency bands, which is conducive to meeting the diversified needs of different fields for wave-absorbing materials;

[0104] 2) It can be known from Comparative Example 1, Example 4 and Example 5 that the MXene material with an etching time of 2h has more advantages in wave-absorbing performance;

[0105] 3) The MXene material of the present application can convert electromagnetic energy through dielectric loss and magnetic loss, and the synergistic mechanism significantly improves its microwave absorption capacity;

[0106] 4) The solid solution amount of N in the MXene material can be adjusted to play a role in adjusting the electromagnetic parameters, but it does not present a regular improvement in wave-absorbing performance, but realizes the strongest absorption effect in different wave bands;

[0107] 5) The thickness of the MXene material can affect the wave-absorbing performance, and different thicknesses can realize the strongest absorption effect in different wave bands.

[0108] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a MXene material, characterized in that: The following steps are involved: 1) Sintering a mixture of M source, A source, nitrogen source, and carbon source to obtain a precursor M n+1 AX n ; 2) Etching the precursor to obtain MXene material M n+1 X n T x , wherein the etching treatment time is 1-3h, the etching treatment solution includes a hydrogen fluoride solution with a mass fraction of 10-40% and a temperature of 25-60°C; Wherein, M includes at least one of Ti, V, Nb, Mo and Zr, n is 1-5, A includes at least one of IIIA and IVA main group elements, X includes C and N, T includes at least one of -F, -OH, -H, -O, -Cl functional groups, and x>0.

2. The preparation method according to claim 1, characterized in that The etching time is 2 hours.

3. The preparation method according to claim 1 or 2, characterized in that The precursor includes Ti3AlC 2-y N y 、Ti2AlC 1-y N y and Nb2AlC 1-y N y One of the following, where 0 <y≤1。 4. The preparation method according to any one of claims 1 to 3, characterized in that The MXene material includes Ti3C 2- y N y T x 、Ti2C 1-y N y T x and Nb2C 1-y N y T x One of the following, where 0 <y≤1。 5. The preparation method according to any one of claims 1 to 4, characterized in that The MXene material includes Ti3C 1.5 N 0.5 T x 、Ti3C 1.2 N 0.8 T x 、Ti3CNT x A kind of.

6. The preparation method according to any one of claims 1 to 5, characterized in that The sintering process comprises the following steps: preserving a mixture comprising an M source, an A source, a nitrogen source and a carbon source at 1400-1500° C. for 1-3 hours to obtain the precursor.

7. The preparation method according to any one of claims 1 to 6, characterized in that After the etching treatment, the following step is further included: performing a pH adjustment treatment on the product after the etching treatment to obtain the MXene material, and the pH after the pH adjustment treatment is 6-7.

8. A MXene material, characterized in that The method is obtained by the preparation method according to any one of claims 1 to 7.

9. The MXene material according to claim 8, characterized in that The dielectric constant of the MXene material under 2-18 GHz electromagnetic waves is greater than 0, the complex magnetic permeability tangent is greater than 0, and the minimum reflection loss within a thickness of 5 mm is -10 to -69.66 dB.

10. An apparatus, characterized in that: It comprises an equipment base and an absorbing coating arranged on at least a portion of the surface of the equipment base, wherein the absorbing coating comprises the MXene material according to claim 8 or 9.

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