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Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof

A technology of exponential doping and cathode materials, applied in cold cathode manufacturing, electrode system manufacturing, discharge tube main electrode, etc., can solve problems such as weak theoretical support, not too suitable concentration and thickness, inconvenient theoretical simulation and data optimization, etc. , to achieve the effect of facilitating theoretical design, improving the overall quantum efficiency, and increasing the escape depth

Inactive Publication Date: 2011-06-08
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the theoretical support of the gradient doping structure is relatively weak. There is no suitable method for calculating the concentration and thickness of each layer, and it is not convenient for theoretical simulation and data optimization.

Method used

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  • Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof
  • Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof
  • Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof

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Embodiment 1

[0028] Embodiment 1: as figure 1 As shown, a GaN ultraviolet photocathode material structure, the material structure consists of a substrate 1 (such as sapphire), an unintentionally doped AlN buffer layer 2, a p-type exponentially doped GaN photoemissive layer 3, and Cs or The Cs / O active layer 4 is composed; wherein, the unintentionally doped AlN buffer layer 2 is epitaxially grown on the substrate layer 1 with a thickness of 50nm; the p-type index-doped GaN photoemissive layer 3 is epitaxially grown on the aforementioned AlN buffer layer 2 , with a thickness of 185nm and a doping concentration of 1×10 18 cm -3 , 2.35×10 17 cm -3 , 1.19×10 17 cm -3and 6×10 16 cm -3 , gradually decreases exponentially from the body to the body surface; the Cs or Cs / O active layer 4 is adsorbed on the front surface of the p-type exponentially doped GaN photoemissive layer 3 through an ultra-high vacuum activation process, with a thickness of one monoatomic layer.

Embodiment 2

[0029] Embodiment 2: Different from Embodiment 1, the thickness of the AlN buffer layer is 100nm; the p-type exponentially doped GaN photo-emitting layer 3 is epitaxially grown on the aforementioned AlN buffer layer 2, with a thickness of 185nm and a doping concentration of 1× 10 18 cm -3 , 2.35×10 17 cm -3 , 1.19×10 17 cm -3 and 6×10 16 cm -3 , gradually decreases exponentially from the body to the body surface; the Cs or Cs / O active layer 4 is adsorbed on the front surface of the p-type exponentially doped GaN photoemissive layer 3 through an ultra-high vacuum activation process, with a thickness of one monoatomic layer.

Embodiment 3

[0030] Embodiment 3: Different from Embodiment 1, the thickness of the AlN buffer layer is 50nm; the p-type exponentially doped GaN photo-emitting layer 3 is epitaxially grown on the aforementioned AlN buffer layer 2, with a thickness of 200nm and a doping concentration of 1× 10 18 cm -3 , 2.99×10 17 cm -3 , 1.34×10 17 cm -3 and 6×10 16 cm -3 , gradually decreases exponentially from the body to the body surface; the Cs or Cs / O active layer 4 is adsorbed on the front surface of the p-type exponentially doped GaN photoemissive layer 3 through an ultra-high vacuum activation process, with a thickness of one monoatomic layer.

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Abstract

The invention provides an exponential-doping GaN ultraviolet photocathode material structure and a preparation method thereof. The structure is formed from a substrate, an unintentionally doped AlN buffer layer, a p-type exponential-doping GaN photoelectric transmission layer and a Cs or Cs / O activation layer which are arranged from bottom to top, wherein the unintentionally doped AlN buffer layer is grown on the substrate; the p-type exponential-doping GaN photoelectric transmission layer is epitaxially grown on the AlN buffer layer; and the Cs or Cs / O activation layer is adsorbed on the front surface of the p-type exponential-doping GaN photoelectric transmission layer. The exponential-doping GaN ultraviolet photocathode material structure has the following advantages: as the exponential-doping GaN photoelectric transmission layer is adopted, the runaway depth of the photo-induced electrons in the transmission layer is increased, and the probability of transmitting the electrons in the transmission layer to the vacuum is improved, thus improving the total quantum efficiency of the GaN ultraviolet photocathode and achieving higher ultraviolet sensitivity; and due to wide application of the exponential function in the technical field of engineering, the adoption of the exponential-doping GaN transmission layer facilitates theoretic design, theoretic simulation and data optimization.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet detection materials, and in particular relates to an ultraviolet photocathode material structure and a preparation method based on the combination of semiconductor material epitaxy technology, semiconductor material doping technology and ultra-high vacuum surface activation technology. Background technique [0002] In recent years, with the improvement of GaN material preparation technology, p-type doping technology and the development of ultra-high vacuum technology, GaN UV photocathode is becoming a new type of high-performance UV photocathode. For GaN photocathodes based on Negative Electron Affinity (NEA), since the surface vacuum energy level of the cathode is lower than the bottom energy level of the conduction band in the body, the photoexcited electrons in the body only need to run to the surface, and then they can be tunneled and emitted to the surface. Vacuum, without excess kinetic ...

Claims

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Application Information

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IPC IPC(8): H01J1/38H01J9/02
Inventor 常本康李飙徐源王晓晖高频张俊举杜晓晴
Owner NANJING UNIV OF SCI & TECH
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