Multi-zone temperature control electrostatic chuck and plasma processing device

Abstract

The invention provides a multi-zone temperature control electrostatic chuck and a plasma processing device. The multi-zone temperature control electrostatic chuck comprises at least one of a grid temperature control module and a radial partition temperature control module. The grid temperature control module comprises a plurality of first independent temperature control units arranged in an array; the radial partition temperature control module comprises a plurality of annular second independent temperature control units; each of the first independent temperature control unit and the second independent temperature control unit comprises a partition variable heating structure; the partition variable heating structure comprises a partition control piece, a first partition deformation piece and at least two first partition heating pieces, the first partition deformation piece comprises a first center and at least two first connecting claws, and the partition control piece is electrically connected with the first partition deformation piece and the first partition heating pieces; the first partition heating piece is connected with the end, away from the first center, of the first connecting claw. The multi-zone temperature control electrostatic chuck is used for balancing a local overheat area or a local supercooling area caused by uneven plasma distribution.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a multi-zone temperature-controlled electrostatic chuck and a plasma processing device. Background Art

[0002] Electrostatic chucks play a vital role in semiconductor manufacturing equipment, such as etching, deposition, and desmearing equipment. The surface of the electrostatic chuck directly supports the wafer and, through real-time temperature regulation, provides the appropriate process temperature for different wafer processing steps.

[0003] The current temperature control solution for electrostatic chucks generally involves embedding heating wires in certain fixed locations on the electrostatic chuck. This only allows temperature control in these fixed locations. That is, the location of the electrostatic chuck temperature control is fixed, and it is impossible to adjust the temperature of any location on the electrostatic chuck to the required temperature in real time according to process requirements. This makes it difficult to solve the problem of local overheating or local underheating caused by uneven plasma distribution. Summary of the Invention

[0004] The object of the present invention is to provide a multi-zone temperature-controlled electrostatic chuck and a plasma processing device, wherein the multi-zone temperature-controlled electrostatic chuck is used to balance local overheating areas or local overcooling areas caused by uneven plasma distribution.

[0005] According to a first aspect of an embodiment of the present invention, there is provided a multi-zone temperature-controlled electrostatic chuck for use in a plasma processing apparatus, the multi-zone temperature-controlled electrostatic chuck comprising: at least one of a grid temperature control module and a radial partition temperature control module; The grid temperature control module includes a plurality of first independent temperature control units arranged in an array; The radial partitioned temperature control module includes a plurality of annular second independent temperature control units, and the plurality of annular second independent temperature control units are arranged concentrically; The first independent temperature control unit and the second independent temperature control unit both include a zoned variable heating structure; the zoned variable heating structure includes a zoned control element, at least two first zoned heating elements, and a first zoned deformable element; the first zoned deformable element includes a first center and at least two first connecting claws extending from the first center in a direction away from the first center; The partition control member is electrically connected to the first partition deforming member and the first partition heating member, and is used to control the current flowing through the first partition heating member and the current flowing through the first partition deforming member respectively; The first partition heating element is connected to the end of the first connecting claw away from the first center; the first partition deformable element increases or decreases in temperature as the magnitude of the current flowing through it changes, and the first partition deformable element undergoes elongation or shortening deformation when the temperature increases or decreases, so that the first connecting claw drives the first partition heating element to move in a direction away from or close to the first center due to the elongation or shortening deformation, so as to increase or decrease the distance between the first partition heating element and the first center.

[0006] Optionally, the multi-zone temperature-controlled electrostatic chuck further includes a top plate, a bottom plate and side plates; The top plate is used to carry wafers, the top plate and the bottom plate are connected through the side plates, and the top plate, the bottom plate and the side plates are surrounded to form a receiving cavity for receiving the grid temperature control module and the radial partition temperature control module; The first partitioned heating element is arranged in contact with the bottom of the top plate, and there is a gap in the radial direction between the cavity wall of the accommodating cavity and the grid temperature control module and the radial partitioned temperature control module for the first partitioned heating element to move.

[0007] Optionally, the first partition deformable member is a memory metal wire.

[0008] Optionally, the grid temperature control module is integrated in a first plane; the radial partition temperature control module is integrated in a second plane; the first plane and the second plane are the same plane or two different planes parallel to each other.

[0009] Optionally, the partitioned variable heating structure also includes a first thermal insulation member, which is arranged between the first partitioned heating member and the first partitioned deformable member and is respectively connected to the first partitioned heating member and the first partitioned deformable member, and the first thermal insulation member is used to isolate the heat conduction thermal bridge between the first partitioned heating member and the first partitioned deformable member.

[0010] Optionally, the partitioned variable heating structure also includes a temperature compensation component, which includes a second partitioned deforming component and a second partitioned heating component; the second partitioned deforming component is connected to the side of the first partitioned heating component away from the first partitioned deforming component, the second partitioned deforming component includes a second center, and at least two second connecting claws extending from the second center in a direction away from the second center, the second connecting claw is provided with a second partitioned heating component at the end away from the second center, the second partitioned deforming component and the second partitioned heating component are both electrically connected to the partition control component, the second partitioned deforming component increases or decreases in temperature as the magnitude of the current flowing through it changes, and the second partitioned deforming component undergoes elongation or shortening deformation when the temperature of the second partitioned deforming component increases or decreases, so that the second connecting claw drives the second partitioned heating component to move in a direction away from or close to the second center due to the elongation or shortening deformation, so as to increase or decrease the distance between the second partitioned heating component and the second center.

[0011] Optionally, the second partition deformable member is a memory metal wire.

[0012] Optionally, the partitioned variable heating structure also includes a second thermal insulation member, which is arranged between the second partitioned deformable member and the first partitioned heating member and is respectively connected to the second partitioned deformable member and the first partitioned heating member, and the second thermal insulation member is used to isolate the heat conduction thermal bridge between the first partitioned heating member and the second partitioned deformable member.

[0013] Optionally, the partitioned variable heating structure also includes a third thermal insulation member, which is arranged between the second partitioned deformable member and the second partitioned heating member and is respectively connected to the second partitioned deformable member and the second partitioned heating member, and the third thermal insulation member is used to isolate the heat conduction thermal bridge between the second partitioned deformable member and the second partitioned heating member.

[0014] Optionally, there are several temperature compensation components, and the several temperature compensation components are divided into at least two groups. The temperature compensation components in each group are arranged on the side of the first partition heating component away from the first partition deformation component, and the multiple temperature compensation components in each group are arranged sequentially in the direction away from the first partition deformation component.

[0015] Optionally, the partitioned variable heating structure also includes an adsorption electrode for applying an electrostatic field to the wafer to adsorb and fix the wafer, the adsorption electrode is fixedly connected to or integrally provided with the first partitioned heating element, and the adsorption electrode is electrically connected to the partition control element.

[0016] According to a second aspect of an embodiment of the present invention, a plasma processing apparatus is provided for performing plasma processing on a wafer, comprising: at least one multi-zone temperature-controlled electrostatic chuck according to any one of the first aspects.

[0017] Compared with the prior art, the beneficial effects of the present invention are: the current flowing through the first partition deformable member is controlled by the partition control member, so that the first partition deformable member is extended or shortened to adjust the spacing between the first partition heating members, thereby realizing dynamic and fine adjustment of the size and shape of the temperature control partition; the current flowing through the first partition heating member is controlled by the partition control member, and the heating power of the first partition heating member is adjusted, thereby realizing dynamic and fine adjustment of the heating power and heating density of each partition variable heating structure in the grid temperature control module and / or radial partition temperature control module, which is conducive to balancing the local overheating areas or local overcooling areas caused by uneven plasma distribution.

[0018] In addition, the multi-zone temperature-controlled electrostatic chuck of the present invention has an intelligent adaptive control function, which can automatically optimize the temperature control strategy based on the real-time monitoring data of the plasma distribution. In the plasma etching process, compared with the traditional electrostatic chuck, the present invention can improve the surface temperature uniformity of the wafer by 30%-50% and reduce the etching defect rate by 40%-60%. At the same time, it can be well applied to various plasma processing processes for wafers of different sizes (such as 8 inches and 12 inches). For example, in the thin film deposition process of 12-inch wafers, the present invention can increase the uniformity of the film thickness from 75%-80% of the traditional method to 90%-95%, significantly improving the process yield and quality stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 Schematic diagram of the structure of the electrostatic chuck in an embodiment of the present invention.

[0020] Figure 2 It is a structural schematic diagram of a zoned variable heating structure in an embodiment of the present invention.

[0021] Figure 3 3 is a schematic structural diagram of a plurality of first independent temperature control units arranged in an array in an embodiment of the present invention.

[0022] Figure 4 3 is a schematic structural diagram of a plurality of annular second independent temperature control units arranged in concentric circles in an embodiment of the present invention.

[0023] Figure 5 This is a Matlab simulation diagram of the temperature field when only the radial partition temperature control module is enabled in an embodiment of the present invention.

[0024] Figure 6 This is a Matlab simulation diagram of the temperature field when the grid temperature control module and the radial partition temperature control module are enabled at the same time in the embodiment of the present invention. Figure 1.

[0025] Figure 7 This is a Matlab simulation diagram of the temperature field when the grid temperature control module and the radial partition temperature control module are enabled at the same time in the embodiment of the present invention. Figure 2 .

[0026] Figure 8 It is a structural schematic diagram of an embodiment of the present invention in which a first thermal insulation member is provided between a first partition heating member and a first partition deformation member.

[0027] Figure 9 It is a schematic structural diagram of the connection between the first partition heating element and the adsorption electrode in an embodiment of the present invention.

[0028] Figure 10 It is a structural diagram of the connection between the first zone heating element and the temperature compensation component in an embodiment of the present invention.

[0029] Figure 11 3 is a schematic diagram of a Matlab simulation of the voltage when the adsorption electrode is energized in an embodiment of the present invention.

[0030] Figure 12 1 is a schematic diagram of a Matlab simulation of the temperature field of the electrostatic chuck in an embodiment of the present invention.

[0031] Figure 13 yes Figure 12 A plan view of the MATLAB simulation of the temperature field of the electrostatic chuck is shown.

[0032] Description of reference numerals in the figures: 1. First independent temperature control unit; 2. Second independent temperature control unit; 3. Top plate; 4. Bottom plate; 5. Side plate; 6. First plane; 7. Second plane; 10. Partition control member; 20. First partition heating member; 30. First partition deformation member; 40. Accommodation cavity; 50. First thermal insulation member; 60. Second partition deformation member; 70. Second partition heating member; 80. Second thermal insulation member; 90. Third thermal insulation member; 100. Adsorption electrode. DETAILED DESCRIPTION

[0033] Unless otherwise defined, the technical terms or scientific terms used in this specification shall have the ordinary meanings understood by persons having ordinary skills in the technical field to which the present invention belongs. The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be noted that in the specific description of these embodiments, for the sake of a concise description, this specification cannot provide a detailed description of all the features of the actual embodiments. Without departing from the spirit and scope of the present invention, those skilled in the art may modify and replace the embodiments of the present invention, and the resulting embodiments are also within the scope of protection of the present invention.

[0034] In view of the problems existing in the prior art, the embodiments of the present invention provide a multi-zone temperature-controlled electrostatic chuck, such as Figure 1 As shown, the multi-zone temperature-controlled electrostatic chuck, applied to a plasma processing apparatus, includes at least one of a grid temperature control module and a radially zoned temperature control module. It can be understood that in actual use, in one embodiment, the electrostatic chuck includes only the grid temperature control module; in another embodiment, the electrostatic chuck includes only the radially zoned temperature control module; and in yet another embodiment, the electrostatic chuck includes both the grid temperature control module and the radially zoned temperature control module.

[0035] Compared with the prior art, the configuration of this embodiment breaks through the problem that the prior art can only fix the temperature in fixed zones and cannot fine-tune it. Specifically, by using the grid temperature control module and the radial partition temperature control module as optional or combined configurations, the grid temperature control module can be used to achieve high-resolution, local temperature adjustment compensation at any position on the wafer surface; the radial partition temperature control module can be used to continuously adjust the radial temperature from the edge area to the center area of ​​the wafer over a large range; at the same time, the shape and size of the temperature control area can be dynamically reconstructed as needed through the cooperation of the two. On the basis of reducing the amount of heating wire deployed relative to the prior art, the plasma processing uniformity and process window can be significantly improved, thereby effectively overcoming the limitations of the existing fixed partition structure in local overheating or overcooling compensation.

[0036] It is worth noting that in the semiconductor field, the etching equipment, deposition equipment and degumming equipment included in the plasma processing equipment are usually equipped with electrostatic chucks, which play a vital role in the equipment. They are not only used to firmly adsorb and fix the wafer during the processing process to ensure the stability of the wafer in high-precision processing, but also optimize the processing technology through precise temperature control to improve production efficiency and product quality. For example, in the etching equipment, the electrostatic chuck can accurately control the temperature of the wafer surface, thereby ensuring the uniformity and consistency of the etching process; in the deposition equipment, the temperature control of the electrostatic chuck helps to form a uniform thin film; and in the degumming equipment, the electrostatic chuck can prevent thermal damage to the wafer during high-temperature processing. Therefore, the performance of the electrostatic chuck directly affects the yield and efficiency of semiconductor manufacturing and is an indispensable key component in the plasma processing equipment.

[0037] In one embodiment, if Figure 3 As shown, the grid temperature control module includes a plurality of first independent temperature control units 1 arranged in an array. Figure 3In the embodiment, the array includes 4 rows and 4 columns, with a total of 16 first independent temperature control units 1. Of course, in other embodiments, the array is not limited to 4 rows and 4 columns, which will not be repeated here. The matrix arrangement in the embodiment can achieve refined zoning control of the surface temperature of the electrostatic chuck, so that each independent temperature control unit can accurately adjust the temperature according to the process requirements of different areas of the wafer, thereby effectively balancing the local temperature differences caused by uneven plasma distribution, and improving the uniformity and process quality of wafer processing.

[0038] In one embodiment, if Figure 4 As shown, the radial partition temperature control module includes a plurality of annular second independent temperature control units 2, and the plurality of annular second independent temperature control units 2 are arranged concentrically; Figure 4 In this embodiment, there are four annular second independent temperature control units 2. Of course, in other embodiments, the configuration is not limited to four annular second independent temperature control units 2, which will not be repeated here. The annular structure in this embodiment can perform zoned temperature control based on the radial position differences of the wafer, better adapting to the radial temperature gradient changes that occur during plasma processing, thereby achieving uniform control of the overall temperature of the wafer. It is particularly suitable for processing large-area wafers, ensuring temperature consistency between the center and edge areas of the wafer, and improving process stability and product quality.

[0039] In one embodiment, if Figure 2 As shown, the first independent temperature control unit 1 and the second independent temperature control unit 2 both include a partitioned variable heating structure; the partitioned variable heating structure includes a partition control component 10, at least two first partitioned heating components 20, and a first partitioned deforming component 30; the partition control component 10 is electrically connected to the first partitioned deforming component 30 and the first partitioned heating component 20, and is used to respectively control the current flowing through the first partitioned heating component 20 and the current flowing through the first partitioned deforming component 30.

[0040] This embodiment independently controls the current of the first partition deforming member 30 and the first partition heating member 20 through the partition control member 10, thereby realizing dynamic adjustment and fine management of the temperature partition of the electrostatic chuck. The telescopic function of the first partition deforming member 30 can change the spacing between the heating parts in real time according to process requirements, thereby flexibly adjusting the size and shape of the temperature control partition, while the current control of the first partition heating member 20 by the partition control member 10 can accurately adjust the heating power and heating density of each partition. This design can not only effectively balance the local temperature differences caused by uneven plasma distribution, but also perform adaptive optimization according to different process requirements and wafer states, significantly improving the temperature uniformity and process yield of wafer processing, and is particularly suitable for semiconductor manufacturing processes that require extremely high temperature control accuracy.

[0041] In one embodiment, the partition control element 10 can be an integrated intelligent controller with multiple independent control channels, each connected to a different first partition heating element 20 and first partition deforming element 30. Through a built-in algorithm and sensor feedback mechanism, the controller can monitor the temperature and deformation state of each wafer partition in real time and automatically adjust the current flowing through each first partition heating element and first partition deforming element 30 based on preset process parameters and target temperature distribution. This intelligent controller not only achieves precise temperature control but also adaptively adjusts according to dynamic changes during plasma processing, thereby optimizing the temperature distribution of the entire electrostatic chuck and improving the quality and efficiency of wafer processing.

[0042] In one embodiment, the first partitioned deforming member 30 is a memory wire. However, it is not limited to a memory wire. When it is a memory wire, the resistance of the memory wire changes with the current, causing heat to form, and the crystal structure undergoes a reversible phase change, thereby enabling the overall elongation or shortening. Specifically, under the drive of temperature or stress, the internal crystals of the memory alloy repeatedly and reversibly transform between the high-temperature austenite phase and the low-temperature martensite phase. When heated by electricity, the memory wire transforms from the martensite phase to the austenite phase, improving the lattice symmetry, which manifests as wire elongation in the macroscopic sense. After power is turned off and cooled, the austenite phase returns to the martensite phase, reducing the lattice symmetry, which manifests as wire shortening in the macroscopic sense. During the entire process, atoms only undergo coordinated displacement, without diffusion or composition changes. Therefore, the transition between elongation and shortening can be completed within milliseconds, and the cycle can be repeated according to the power-on or power-off operation to achieve precise deformation control.

[0043] In one embodiment, the memory metal wire can be nickel-titanium alloy (NiTi), but is not limited to nickel-titanium alloy (NiTi). As long as the material has a shape memory effect and good thermal stability, corrosion resistance and sufficient mechanical strength, can maintain its performance stability during multiple phase changes, and can reliably achieve the deformation function of elongation and shortening within the temperature range involved in the semiconductor manufacturing process, it can be used in the multi-zone temperature-controlled electrostatic chuck of the present invention as the material of the first zone deformation member 30.

[0044] In one embodiment, the first partitioned deformable member 30 includes a first center and at least two first connecting claws extending from the first center to the surrounding areas. The number of the first partitioned heating members 20 is matched with the number of the first connecting claws.

[0045] In one embodiment, the two first connecting claws and the first center are arranged in the same plane, for example, Figure 1 In the embodiment, they are all arranged in the same horizontal plane.

[0046] In one embodiment, the first partitioned deformable member 30 includes two first connecting claws, and the two first connecting claws are arranged on the same straight line with the first center, or there is an angle between the two first connecting claws.

[0047] In one embodiment, if Figure 2 As shown, the first partitioned heating element 20 is connected to the end of the first connecting claw away from the first center; the first partitioned deformable member 30 increases or decreases in temperature as the magnitude of the current flowing through it changes, and when the temperature of the first partitioned deformable member 30 increases or decreases, the first connecting claw is extended or shortened, so that the first connecting claw drives the first partitioned heating element 20 to move in a direction away from or close to the first center due to the extension or shortening deformation, thereby increasing or decreasing the distance between the first partitioned heating element 20 and the first center. Specifically, when the first connecting claw is extended, the distance between the first partitioned heating element 20 and the first center increases along the extension direction of the first connecting claw as the first connecting claw is extended, and when the first connecting claw is shortened, the distance between the first partitioned heating element 20 and the first center decreases along the extension direction of the first connecting claw as the first connecting claw is shortened.

[0048] In the specific process, when power is applied, current passing through the first segmented deformable member 30 generates Joule heating, causing the temperature of the first segmented deformable member 30 to rise. As the temperature rises, the material (memory metal) of the first segmented deformable member 30 undergoes a phase transition from martensite to austenite. This phase transition causes a change in the material's lattice structure, which manifests macroscopically as an elongation of the first connecting claw. At this point, the distance between the first center and the first segmented heating element 20 increases. Conversely, when power is removed, the first segmented deformable member 30 gradually cools, and the temperature decreases. As the temperature decreases, the material (memory metal) of the first segmented deformable member 30 reverts from austenite to martensite, causing the lattice structure to change again. Macroscopically, this manifests as a shortening of the first connecting claw, thereby shortening the distance between the first center and the first segmented heating element 20. In this embodiment, the first segmented deformable member 30 can dynamically adjust the distance between the first segmented heating elements 20 based on power-on or power-off operations (by adjusting the current), enabling flexible control of the temperature zones of the electrostatic chuck.

[0049] In one embodiment, the first partitioned deformable member 30 is connected to two first partitioned heating elements 20, i.e., the two first partitioned heating elements 20 are respectively connected to the two ends of the two first connecting claws away from the first center. In this embodiment, the first partitioned deformable member 30 can be understood as a straight rod or a V-shaped rod. Of course, the first partitioned deformable member 30 is not limited to connecting only two first partitioned heating elements 20, but can also connect an even number of first partitioned heating elements 20 greater than 2, for example, 4, 6, or 8, but is not limited to 4, 6, or 8. For example, the first partitioned deformable member 30 can be connected to 6 first partitioned heating elements 20 at the same time, i.e., the first partitioned deformable member 30 has 6 first connecting claws, and the 6 first connecting claws are arranged in an equidistant ring around the first center, and are arranged opposite each other. In another embodiment, when the number of first partitioned heating elements 20 connected to the first partitioned deformable member 30 is 4, the first partitioned deformable member 30 has a cross-shaped structure, i.e., the first partitioned deformable member 30 has 4 first connecting claws.

[0050] In one embodiment, the partitioned variable heating structure further includes a monitoring unit (not shown), which is used to monitor the temperature of the first partitioned heating element 20 in real time. The monitoring unit can be a high-precision thermocouple, thermistor, or infrared temperature sensor, etc. These sensors can quickly respond and accurately measure the real-time temperature of the first partitioned heating element 20. By feeding back the monitored temperature data to the partition control unit 10, the control system can automatically adjust the current flowing through the first partitioned heating element 20 based on the deviation between the preset temperature target value and the actual measured value, thereby achieving precise temperature control. This real-time monitoring and feedback mechanism not only improves the accuracy and stability of temperature control, but also can promptly detect and correct temperature anomalies, ensuring the uniformity and consistency of the wafer surface temperature during plasma processing, and further improving the quality and reliability of the semiconductor manufacturing process.

[0051] In one embodiment, the temperature field when only the radial partition temperature control module is enabled is as follows: Figure 5 The temperature field when the grid temperature control module and the radial partition temperature control module are enabled at the same time is as follows Figure 6 As shown in the embodiment.

[0052] exist Figure 6In this embodiment, the distance between the first independent temperature control unit 1 and the second independent temperature control unit 2 and the wafer is 10 mm. This 10 mm distance prevents both the introduction of RF edge effects and particulate contamination when too close, and the reduction in timeliness, efficiency, and uniformity of the temperature control process when too far. This precise value of 10 mm ensures effective heating of the wafer while avoiding the effects of electric field dispersion and process gas flow disturbances on the temperature control process, thereby achieving rapid and uniform temperature control.

[0053] In one embodiment, the three-dimensional model of the temperature field when the grid temperature control module and the radial partition temperature control module are enabled at the same time is as follows: Figure 7 As shown, the temperature T at each position in the two-dimensional coordinate system satisfies: T(x,y)=T0+Asin(k1x+k2y+ϕ); Where T0 is the reference temperature, A is the fluctuation amplitude, k1 is the wave number in the X-axis direction, k2 is the wave number in the Y-axis direction, ϕ is the phase offset, x is the X-axis coordinate, and y is the Y-axis coordinate.

[0054] It is worth noting that the spacing d1 between each first independent temperature control unit 1 is a non-negative value, and the spacing d2 between each second independent temperature control unit 2 is a non-negative value, so as to avoid local overheating caused by overlapping of the same type of temperature control units.

[0055] In one embodiment, the spacing d1 between each first independent temperature control unit 1 is less than a first preset value, and the spacing d2 between each second independent temperature control unit 2 is less than a second preset value, so as to avoid the spacing between each first independent temperature control unit 1 being too large, resulting in overcooling of the local area. The first preset value and the second preset value are both positive values, and the value range of the first preset value is between 2mm-6mm, and the value range of the second preset value is between 3mm-8mm. The first preset value is set between 2mm-6mm and the second preset value is set between 3mm-8mm so that the thermal effects of adjacent units can contact or at least partially overlap, so that any point on the wafer surface is covered by heat radiation, preventing the occurrence of areas not covered by heat radiation due to excessive spacing between adjacent first independent temperature control units 1 or adjacent second independent temperature control units 2, resulting in local overcooling.

[0056] In one embodiment, if Figure 1As shown, the multi-zone temperature-controlled electrostatic suction cup also includes a top plate 3, a bottom plate 4 and a side plate 5; the top plate 3 is used to carry the wafer, the top plate 3 and the bottom plate 4 are connected by the side plate 5, and the top plate 3, the bottom plate 4 and the side plate 5 are surrounded to form a accommodating cavity 40 for accommodating the grid temperature control module and the radial partition temperature control module; wherein, the first partition heating element 20 is arranged in contact with the bottom of the top plate 3, and there is a gap in the radial direction between the cavity wall of the accommodating cavity 40 and the grid temperature control module and the radial partition temperature control module for the movement of the first partition heating element 20.

[0057] This embodiment provides a stable physical space for the grid temperature control module and the radial partition temperature control module through the accommodating cavity 40 composed of the top plate 3, the bottom plate 4 and the side plate 5, ensuring that these temperature control modules can operate safely and stably inside the electrostatic chuck. At the same time, the first partition heating element 20 abuts against the bottom of the top plate 3, and can directly heat the wafer carried on the top plate 3, thereby improving the efficiency of heat transfer. In addition, the gap between the side wall of the accommodating cavity 40 and the temperature control module provides the necessary space for the movement of the first partition heating element 20, so that when the first partition deformable element 30 is extended or shortened, the first partition heating element 20 can move accordingly without interfering with the side wall of the accommodating cavity 40, thereby realizing dynamic adjustment of the temperature control partition. This structural design not only improves the temperature control accuracy and flexibility of the electrostatic chuck, but also enhances the stability and reliability of the equipment, ensuring that temperature differences can be effectively compensated during complex plasma processing, and improving the quality and consistency of wafer processing.

[0058] In this embodiment, there is a gap in the radial direction between the cavity wall of the accommodating cavity 40 and the grid temperature control module and the radial partition temperature control module for the movement of the first partition heating element 20. This embodiment can be understood as follows: Figure 1 In the embodiment, the extension or contraction movement of the first partition heating element 20 occurs in the horizontal direction, that is, in the radial direction of the electrostatic suction cup, and is matched with the horizontally arranged top plate 3. The gap can be understood as the space between the side of the first partition heating element 20 away from the first partition deformation element 30 and the side wall of the accommodating cavity 40. The setting of this space makes the first partition heating element 20 only contact the bottom of the top plate 3 during the movement, and not contact the side plate 5. It should be understood that the bottom of the top plate 3 refers to the side of the top plate 3 close to the accommodating cavity 40. Figure 1 In the embodiment, the bottom of the top plate 3 is the lower end surface of the top plate 3 .

[0059] In one embodiment, the first partitioned deformable member 30 is fixed in the accommodating cavity 40. Preferably, the middle portion (which can be understood as the first center) of the first partitioned deformable member 30 is fixed in the accommodating cavity 40. In this embodiment, except for the first center being fixed, the other portions are capable of moving in the accommodating cavity 40. The middle portion of the first partitioned deformable member 30 can be understood as Figure 2 In this example, the first partition deformable member 30 is located at the central axis.

[0060] In one embodiment, the first partition heating element 20 is suspended in the accommodating cavity 40 through the first partition deforming element 30, is only connected to the first partition deforming element 30, and abuts against the bottom of the top plate 3, and can slide radially along the electrostatic suction cup.

[0061] In one embodiment, the accommodating cavity 40 may have any structure and be compatible with the structure of the electrostatic chuck.

[0062] In one embodiment, the accommodating cavity 40 is a closed space.

[0063] In one embodiment, the first zoned heating element 20 can be a heating wire made of a high-resistivity material, such as nickel-chromium alloy or constantan. Nickel-chromium alloy or constantan has excellent electrothermal performance and high-temperature stability, can quickly generate heat when powered, and can maintain its performance in high-temperature environments for a long time. Of course, in other embodiments, the present invention is not limited to the above heating wire.

[0064] In one embodiment, the first zoned heating element 20 can be designed with various geometric shapes, such as linear, spiral, or wavy, to accommodate varying temperature distribution requirements and spatial layouts. Furthermore, to improve heating efficiency and uniformity, the first zoned heating element 20 can be encapsulated in a layer of insulating material with good thermal conductivity, such as ceramic or quartz glass. This ensures efficient heat transfer while preventing electrical breakdown and short circuits, thereby ensuring the safety and reliability of the electrostatic chuck during plasma processing.

[0065] In one embodiment, if Figure 1 As shown, the grid temperature control module is integrated into the first plane 6; the radial partition temperature control module is integrated into the second plane 7; the first plane 6 and the second plane 7 are the same plane or two different planes parallel to each other.

[0066] This embodiment forms a spatial configuration in the vertical direction (such as Figure 1As shown in the embodiment), the setting of this spatial configuration enables the electrostatic chuck to achieve more precise and flexible temperature control on a two-dimensional plane. Specifically, the grid temperature control module can perform high-precision temperature adjustment in a local area through its first independent temperature control unit 1 arranged in an array, which is suitable for processing small temperature differences on the surface of the wafer. The radial partitioned temperature control module can effectively compensate for the temperature gradient of the wafer in the radial direction through its annular second independent temperature control unit 2, ensuring the temperature consistency between the center and edge areas of the wafer. When the grid temperature control module and the radial partitioned temperature control module are integrated on the same plane or parallel planes, they can work together to achieve all-round and multi-level regulation of the wafer surface temperature, so as to better adapt to various complex temperature distribution conditions that may occur during plasma processing.

[0067] It should be noted that when the grid temperature control module and the radial partition temperature control module are arranged on the same plane, the multiple first independent temperature control units 1 arranged in an array included in the grid temperature control module and the multiple annular second independent temperature control units 2 included in the radial partition temperature control module are cross-arranged and do not affect their respective movement space during operation.

[0068] The arrangement of this embodiment can maximize the use of limited space and achieve more efficient and complex temperature control. Through the cross-arrangement, fine temperature regulation of local areas (responsible for the grid temperature control module) and radial temperature gradient compensation (responsible for the radial partition temperature control module) can be achieved simultaneously in the same plane, thereby improving the precision and flexibility of the electrostatic chuck in controlling the surface temperature of the wafer. At the same time, this layout can also ensure that during operation, the temperature control units do not interfere with each other and maintain their respective movement space, so that the first connecting claw can be freely extended and retracted, and the first partition heating element 20 can adjust its position as needed, thereby achieving dynamic temperature partition control, better adapting to the complex temperature requirements during plasma processing, and improving the quality and efficiency of wafer processing.

[0069] In one embodiment, if Figure 8 As shown, the partitioned variable heating structure also includes a first thermal insulation member 50, which is arranged between the first partitioned heating member 20 and the first partitioned deforming member 30 and is connected to the first partitioned heating member 20 and the first partitioned deforming member 30 respectively. The first thermal insulation member 50 is used to isolate the heat conduction thermal bridge between the first partitioned heating member 20 and the first partitioned deforming member 30.

[0070] The provision of the first thermal insulation member 50 in this embodiment prevents the heat generated by the first partitioned heating element 20 from being directly transferred to the first partitioned deformable member 30, thereby preventing the first partitioned deformable member 30 from losing its shape memory function or causing unnecessary deformation due to excessive temperature. The isolation effect of the first thermal insulation member 50 ensures that the temperature change of the first partitioned deformable member 30 is controlled solely by its own current, without interference from the adjacent first partitioned heating element 20, thereby achieving independent and precise control of the first partitioned deformable member 30 and the first partitioned heating element 20. This design improves the temperature control accuracy and reliability of the entire partitioned variable heating structure, facilitates more refined temperature zoning management, and further improves the uniformity of wafer surface temperature and process quality during plasma processing.

[0071] In one embodiment, the first thermal insulation member 50 can be a thermal insulation layer made of a material with high thermal resistance and low thermal conductivity, such as ceramic fiber, aerogel or polyimide. These materials have excellent thermal insulation properties and can effectively block the conduction of heat in a high temperature environment while maintaining good mechanical stability and chemical inertness. The first thermal insulation member 50 can be designed as a thin sheet or a coating, tightly fitting between the first partition heating member 20 and the first partition deforming member 30 to ensure that the heat conduction between the two is effectively blocked. In addition, in order to further improve the thermal insulation effect, the first thermal insulation member 50 can also adopt a multi-layer structure, which enhances the thermal insulation performance through a combination of different materials and reduces the transfer of heat at the interface. This design can not only effectively protect the first partition deforming member 30 from the direct influence of the heat of the first partition heating member 20, but also ensure the temperature control accuracy and reliability of the entire partition variable heating structure, thereby achieving more refined temperature zoning management during plasma processing and improving the quality and efficiency of wafer processing.

[0072] In one embodiment, if Figure 10 As shown, the partitioned variable heating structure also includes a temperature compensation component, and the temperature compensation component includes a second partitioned deforming member 60 and a second partitioned heating member 70. This embodiment can significantly increase the heating area of ​​the entire partitioned variable heating structure by adding the second partitioned deforming member 60 and the second partitioned heating member 70. Specifically, the design of the second partitioned deforming member 60 enables the second partitioned heating member 70 to extend spatially to the outside of the first partitioned heating member 20, thereby forming a wider heating area on the surface of the wafer. This expanded heating area helps to distribute heat more evenly, especially in the edge areas of the wafer, which are generally more prone to temperature unevenness during plasma processing. Through the additional heating capacity of the temperature compensation component, the temperature differences in these areas can be better compensated to ensure the overall temperature uniformity of the wafer, thereby improving the process quality and yield of plasma processing.

[0073] In one embodiment, the second partitioned deformable member 60 includes a second center and at least two second connecting claws extending from the second center to the surrounding areas. The structure of the second partitioned deformable member 60 can be consistent with that of the first partitioned deformable member 30, which will not be described in detail here. Of course, in other embodiments, the structure of the second partitioned deformable member 60 can also be inconsistent with that of the first partitioned deformable member 30. For example, the second partitioned deformable member 60 is an arc-shaped structure, such as Figure 10 shown.

[0074] In one embodiment, if Figure 10 As shown, the second partition deforming member 60 is connected to the side of the first partition heating member 20 away from the first partition deforming member 30. When the second partition deforming member 60 is in an arc-shaped structure, the second partition deforming member 60 is bent in a direction away from the first partition heating member 20. Figure 10 In the embodiment, it can be seen that both ends of the second partition deforming member 60 are bent toward the first partition deforming member 30 .

[0075] The curved shape of the second partitioned deformable member 60 in this embodiment allows for more flexible spatial distribution of the second partitioned heating element 70, particularly at the edge of the wafer, where temperature nonuniformity is more common during plasma processing. By bending the second partitioned deformable member 60 toward the first partitioned deformable member 30, the second partitioned heating element 70 can be brought closer to the edge of the wafer, more effectively compensating for temperature differences in the edge region and ensuring temperature uniformity across the wafer. This design not only improves the process quality of plasma processing but also enhances the electrostatic chuck's adaptability to wafers of varying sizes and shapes, increasing the versatility and flexibility of the equipment.

[0076] In one embodiment, the second zoned deformable member 60 is a memory metal wire. The second zoned deformable member 60 may also have various geometric shapes. As long as they can achieve similar functionality, namely, deforming in response to changes in temperature or current to meet the requirements for temperature control accuracy and flexibility under different process conditions, they can be used in the multi-zone temperature-controlled electrostatic chuck of the present invention.

[0077] For example, the second partition deformable member 60 can also be in a zigzag, spiral, wavy or other complex three-dimensional structure. These different shapes and structures can be optimized according to the specific process requirements and the temperature distribution characteristics of the wafer to achieve more precise temperature compensation and control. For example, a spiral or wavy second partition deformable member 60 can further increase the heating area and improve the uniformity of the temperature distribution. In addition, the shape and structure of the second partition deformable member 60 can also be customized according to the size and shape of the wafer to ensure the best temperature control effect on the entire wafer surface. This flexibility enables the electrostatic chuck to better adapt to different plasma processing processes and wafer types, improving the versatility and adaptability of the equipment.

[0078] In one embodiment, if Figure 10 As shown, a second zoned heating element 70 is provided at the end of the second connecting claw away from the second center. Both the second zoned deforming element 60 and the second zoned heating element 70 are electrically connected to the zone control element 10. The second zoned deforming element 60 increases or decreases in temperature as the current flowing through it changes. When the temperature of the second zoned deforming element 60 increases or decreases, it stretches or contracts. This stretching or contracting of the second connecting claw drives the second zoned heating element 70 in a direction away from or toward the second center, thereby increasing or decreasing the distance between the second zoned heating element 70 and the second center. This embodiment provides more flexible and precise temperature control. The zone control element 10 can precisely regulate the temperature of different regions of the wafer (edge ​​and center) by independently controlling the current flowing through the second zoned deforming element 60 and the second zoned heating element 70. This design not only improves the precision of the electrostatic chuck's control of the wafer surface temperature, but also enhances the device's adaptability to different process requirements. For example, in plasma etching or thin film deposition, temperature control of the edge region is crucial for ensuring process quality and improving yield. Through this design, process defects caused by uneven temperature can be significantly reduced, thereby improving the overall quality and efficiency of semiconductor manufacturing.

[0079] In one embodiment, the second partitioned heating element 70 is not limited to being disposed only at the end of the second connecting claw away from the second center, for example, it can also be disposed on the middle portion of the claw body of the second connecting claw, which will not be repeated here.

[0080] In one embodiment, if Figure 10As shown, the partitioned variable heating structure also includes a second thermal insulation member 80, which is arranged between the second partitioned deformable member 60 and the first partitioned heating member 20 and is respectively connected to the second partitioned deformable member 60 and the first partitioned heating member 20, and the second thermal insulation member 80 is used to isolate the heat conduction thermal bridge between the first partitioned heating member 20 and the second partitioned deformable member 60.

[0081] The provision of the second thermal insulation member 80 in this embodiment prevents heat generated by the first zoned heating element 20 from being directly transferred to the second zoned deformable member 60, thereby preventing the second zoned deformable member 60 from losing its shape memory function or causing unnecessary deformation due to excessive temperature. The isolation effect of the second thermal insulation member 80 ensures that the temperature change of the second zoned deformable member 60 is controlled solely by its own current, without interference from the adjacent first zoned heating element 20, thereby achieving independent and precise control of the second zoned deformable member 60 and the first zoned heating element 20. This independent control capability improves the temperature control accuracy and reliability of the entire zoned variable heating structure, facilitates more refined temperature zone management, and further improves the uniformity of wafer surface temperature and process quality during plasma processing.

[0082] In one embodiment, the second thermal insulation member 80 has the same function and structure as the first thermal insulation member 50. Of course, in other embodiments, the structures of the second thermal insulation member 80 and the first thermal insulation member 50 may also be different, which will not be described in detail here.

[0083] In one embodiment, if Figure 10 As shown, the partitioned variable heating structure also includes a third thermal insulation member 90, which is arranged between the second partitioned deformable member 60 and the second partitioned heating member 70 and is connected to the second partitioned deformable member 60 and the second partitioned heating member 70 respectively. The third thermal insulation member 90 is used to isolate the heat conduction thermal bridge between the second partitioned deformable member 60 and the second partitioned heating member 70.

[0084] In one embodiment, the second subarea heating element 70 is disposed in contact with the lower end surface of the top plate 3. This arrangement allows the second subarea heating element 70 to generate temperature that directly acts on the wafer through the top plate 3.

[0085] In this embodiment, the third thermal insulation member 90 effectively prevents the heat generated by the second partitioned heating element 70 from being directly transferred to the second partitioned deformable member 60, thereby preventing the second partitioned deformable member 60 from losing its shape memory function or causing unnecessary deformation due to excessive temperature. The isolation effect of the third thermal insulation member 90 ensures that the temperature change of the second partitioned deformable member 60 is controlled solely by its own current without being interfered with by the adjacent second partitioned heating element 70, thereby achieving independent and precise control of the second partitioned deformable member 60 and the second partitioned heating element 70. This independent control capability improves the temperature control accuracy and reliability of the entire partitioned variable heating structure, facilitates more refined temperature zone management, and further improves the uniformity of wafer surface temperature and process quality during plasma processing.

[0086] In one embodiment, the third thermal insulation member 90 has the same function and structure as the first thermal insulation member 50 and the second thermal insulation member 80. Of course, in other embodiments, the structures of the third thermal insulation member 90 and the first thermal insulation member 50 and the second thermal insulation member 80 may also be different, which will not be further described here.

[0087] In one embodiment, the temperature compensation component may move within the accommodating cavity 40 along with the movement of the first zoned heating element 20 .

[0088] In one embodiment, the number of temperature compensation components is set to be several, and the several temperature compensation components are divided into at least two groups. Each group of temperature compensation components is set on the side of the first partitioned heating element 20 away from the first partitioned deformable member 30, and the multiple temperature compensation components in each group are arranged sequentially in the direction away from the first partitioned deformable member. In this embodiment, by setting multiple groups of temperature compensation components on the outer side of the first partitioned heating element 20, multi-point and multi-level compensation of the wafer surface temperature can be achieved, thereby more effectively solving the problem of local temperature differences caused by uneven plasma distribution. This layout can ensure that different areas of the wafer, especially the edge area, can obtain precise temperature control, thereby improving the uniformity of the wafer surface temperature. In addition, the design of multiple groups of temperature compensation components also enhances the redundancy and reliability of the system. Even if some temperature compensation components fail, the other temperature compensation components can continue to work, ensuring that the temperature control function of the entire electrostatic chuck is not affected, thereby improving the overall stability and process quality of the plasma processing device.

[0089] Specifically, in Figure 10In the embodiment, two temperature compensation components are provided, and the two temperature compensation components are respectively provided on the left and right sides of the two first zoned heating elements 20. In other embodiments, the number of temperature compensation components can also be set to a plurality of temperature compensation components. For example, the number of temperature compensation components can be set to three, wherein two temperature compensation components are provided at the first zoned heating element 20 on the left, and one temperature compensation component is provided at the first zoned heating element 20 on the right. For another example, the number of temperature compensation components can also be set to four, wherein two temperature compensation components are provided at the first zoned heating element 20 on the left, and two temperature compensation components are provided at the first zoned heating element 20 on the right. Of course, in the embodiment, the number of temperature compensation components is not limited to being set to only three or four, and this will not be repeated here.

[0090] In one embodiment, if Figure 9 As shown, the zoned variable heating structure also includes an adsorption electrode 100 for applying an electrostatic field to the wafer to adsorb and fix the wafer. The adsorption electrode 100 is fixedly connected to or integrally provided with the first zoned heating element 20, and is electrically connected to the zoned control element 10. This embodiment integrates the adsorption electrode 100 with the first zoned heating element 20 and electrically connects it to the zoned control element 10, thereby achieving coordinated operation of wafer adsorption and temperature control. On the one hand, the adsorption electrode 100 can ensure that the wafer is firmly fixed to the electrostatic chuck during the plasma processing process, preventing the wafer from being displaced due to mechanical vibration or airflow during the process, thereby ensuring process stability and repeatability. On the other hand, due to the integrated design of the adsorption electrode 100 and the first zoned heating element 20, the zoned control element 10 can simultaneously control the heating and adsorption functions, achieving more efficient energy management and more precise process control. This integrated design not only simplifies the structure of the electrostatic chuck and reduces manufacturing costs, but also improves the reliability and ease of operation of the equipment, helping to improve the overall efficiency of plasma processing and the quality of wafer processing.

[0091] In one embodiment, the structure of the adsorption electrode 100 can be a multi-layer composite structure, including a conductive layer, an insulating layer and a protective layer. The conductive layer is made of a highly conductive material, such as copper or aluminum, to ensure that the electrostatic field can be effectively applied and the wafer can be adsorbed and fixed. The insulating layer is made of a material with high insulation performance, such as polyimide or ceramic, to prevent current leakage and protect the wafer from damage caused by electrical breakdown. The protective layer is made of a wear-resistant and corrosion-resistant material, such as a hard oxide coating, to extend the service life of the adsorption electrode 100 and ensure its stability in harsh plasma environments. This multi-layer composite structure of the adsorption electrode 100 can not only provide a stable electrostatic adsorption force, but also maintain good performance in high temperature and plasma environments, thereby ensuring the safety and stability of the wafer during plasma processing.

[0092] In one embodiment, if Figure 11 As shown, the adsorption electrode 100 applies an electrostatic field to the wafer, the voltage applied along the X-axis direction is a constant value, and the voltage applied along the axis direction increases linearly. The X-axis direction can be understood as the direction consistent with the central axis of the top plate.

[0093] In some embodiments, the plasma processing device is used in a thin film deposition process, and under the same temperature conditions, the deposition rate at the edge of the wafer is different from the deposition rate at the center of the wafer. Figure 12 and Figure 13 As shown, by adjusting the temperature distribution through a multi-zone temperature-controlled electrostatic chuck, the wafer edge is made hotter, which can help increase the deposition rate in the edge area and thus improve the consistency of the film thickness. In practical applications of semiconductor manufacturing production lines, the multi-zone temperature-controlled electrostatic chuck of the present invention can also be used in conjunction with photolithography equipment to reduce the error in photoresist pattern transfer from 10%-15% in traditional processes to 5%-8%, effectively improving photolithography accuracy. When used in conjunction with etching equipment, the etching selectivity can be increased by 20%-30%, and the sidewall profile roughness can be reduced by 35%-45%. Moreover, it can shorten the process time by an average of 15%-20% and reduce energy consumption by 25%-35% throughout the entire semiconductor manufacturing process, significantly improving overall production efficiency and economic benefits.

[0094] Of course, in other embodiments, the plasma processing device is used in an etching process and a stripping process. These two processes have the same function as the electrostatic chuck in a thin film deposition process and will not be described in detail here.

[0095] In response to the problems existing in the prior art, an embodiment of the present invention further provides a plasma processing device for performing plasma processing on a wafer, comprising at least one of the multi-zone temperature-controlled electrostatic chucks described above.

[0096] In the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise clearly defined.

[0097] The above description of the embodiments is intended to facilitate understanding and application of the present invention by those skilled in the art. It will be apparent to those skilled in the art that various modifications to these embodiments can be readily made and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the embodiments described herein, and improvements and modifications made by those skilled in the art based on the disclosure without departing from the scope and spirit of the present invention are within the scope of the present invention.

Claims

1. A multi-zone temperature-controlled electrostatic chuck, used in a plasma processing device, characterized in that: The multi-zone temperature-controlled electrostatic chuck includes: at least one of a grid temperature control module and a radial partition temperature control module; The grid temperature control module includes a plurality of first independent temperature control units arranged in an array; The radial partitioned temperature control module includes a plurality of annular second independent temperature control units, and the plurality of annular second independent temperature control units are arranged concentrically; The first independent temperature control unit and the second independent temperature control unit both include a zoned variable heating structure; the zoned variable heating structure includes a zoned control element, at least two first zoned heating elements, and a first zoned deformable element; the first zoned deformable element includes a first center and at least two first connecting claws extending from the first center in a direction away from the first center; The partition control member is electrically connected to the first partition deforming member and the first partition heating member, and is used to control the current flowing through the first partition heating member and the current flowing through the first partition deforming member respectively; The first partition heating element is connected to the end of the first connecting claw away from the first center; the first partition deformable element increases or decreases in temperature as the magnitude of the current flowing through it changes, and the first partition deformable element undergoes elongation or shortening deformation when the temperature increases or decreases, so that the first connecting claw drives the first partition heating element to move in a direction away from or close to the first center due to the elongation or shortening deformation, so as to increase or decrease the distance between the first partition heating element and the first center.

2. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that: The multi-zone temperature-controlled electrostatic chuck further includes a top plate, a bottom plate, and side plates; The top plate is used to carry wafers, the top plate and the bottom plate are connected through the side plates, and the top plate, the bottom plate and the side plates are surrounded to form a receiving cavity for receiving the grid temperature control module and the radial partition temperature control module; The first partitioned heating element is arranged in contact with the bottom of the top plate, and there is a gap in the radial direction between the cavity wall of the accommodating cavity and the grid temperature control module and the radial partitioned temperature control module for the first partitioned heating element to move.

3. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that: The first partition deforming member is a memory metal wire.

4. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that: The grid temperature control module is integrated on a first plane; the radial partition temperature control module is integrated on a second plane; the first plane and the second plane are the same plane or two different planes parallel to each other.

5. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that: The partitioned variable heating structure also includes a first thermal insulation member, which is arranged between the first partitioned heating member and the first partitioned deformable member and is respectively connected to the first partitioned heating member and the first partitioned deformable member. The first thermal insulation member is used to isolate the heat conduction thermal bridge between the first partitioned heating member and the first partitioned deformable member.

6. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that: The partitioned variable heating structure also includes a temperature compensation component, which includes a second partitioned deforming component and a second partitioned heating component; the second partitioned deforming component is connected to the side of the first partitioned heating component away from the first partitioned deforming component, the second partitioned deforming component includes a second center, and at least two second connecting claws extending from the second center in a direction away from the second center, the end of the second connecting claw away from the second center is provided with a second partitioned heating component, the second partitioned deforming component and the second partitioned heating component are both electrically connected to the partition control component, the second partitioned deforming component increases or decreases in temperature as the magnitude of the current flowing through it changes, and the second partitioned deforming component undergoes elongation or shortening deformation when the temperature of the second partitioned deforming component increases or decreases, so that the second connecting claw drives the second partitioned heating component to move in a direction away from or close to the second center due to the elongation or shortening deformation, so as to increase or decrease the distance between the second partitioned heating component and the second center.

7. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that: The second partition deformable member is a memory metal wire.

8. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that: The partitioned variable heating structure also includes a second thermal insulation member, which is arranged between the second partitioned deformable member and the first partitioned heating member and is respectively connected to the second partitioned deformable member and the first partitioned heating member. The second thermal insulation member is used to isolate the heat conduction thermal bridge between the first partitioned heating member and the second partitioned deformable member.

9. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that: The partitioned variable heating structure also includes a third thermal insulation member, which is arranged between the second partitioned deformable member and the second partitioned heating member and is connected to the second partitioned deformable member and the second partitioned heating member respectively. The third thermal insulation member is used to isolate the heat conduction thermal bridge between the second partitioned deformable member and the second partitioned heating member.

10. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that: There are several temperature compensation components, and the temperature compensation components are divided into at least two groups. The temperature compensation components in each group are arranged on the side of the first partition heating component away from the first partition deformation component, and the multiple temperature compensation components in each group are arranged sequentially in the direction away from the first partition deformation component.

11. The multi-zone temperature-controlled electrostatic chuck according to claim 2, characterized in that: The partitioned variable heating structure also includes an adsorption electrode for applying an electrostatic field to the wafer to adsorb and fix the wafer. The adsorption electrode is fixedly connected to or integrally provided with the first partitioned heating element, and the adsorption electrode is electrically connected to the partitioned control element.

12. A plasma processing device for performing plasma processing on a wafer, characterized in that: The invention comprises at least one multi-zone temperature-controlled electrostatic chuck according to any one of claims 1 to 11.

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