Photoresist removal method and semiconductor device manufacturing method

Abstract

The invention provides a photoresist removing method and a semiconductor device manufacturing method, when photoresist on a substrate needs to be removed, corresponding oxygen-free gas is introduced into a plasma processing chamber and plasma excitation is carried out, so that corresponding rays are generated and act on the surface of the photoresist, the surface of the photoresist is re-melted, and the photoresist on the substrate is removed; according to the method, the photoresist is cleaned by the wet method, and then the hard shell on the surface of the photoresist is removed, so that the photoresist removal capability of subsequent wet cleaning can be effectively improved, the wet cleaning time is shortened, the photoresist is effectively removed, meanwhile, residues generated after the photoresist is removed by wet cleaning can be effectively avoided, the product yield is further improved, and the general applicability is high. Moreover, the surface of the photoresist is re-melted by mainly utilizing the action of rays generated after plasma excitation is carried out on the oxygen-free gas to remove the hard shell on the surface of the photoresist, so that the problem of secondary influence on the exposed substrate caused by the existing dry photoresist removing processes such as a plasma ashing process and the like can be effectively avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and in particular to a photoresist removal method and a semiconductor device manufacturing method. Background Art

[0002] Yield is a core indicator of semiconductor device manufacturing technology. Defects in any process step may lead to a decrease in yield. Figure 1 , using a photolithography (Photo) process to pattern a photoresist (PR) 102 coated on a substrate (including a base 100 and a material film layer 101 covering the base 100), and further performing relevant processing techniques of the current stage under the mask of the patterned photoresist to perform corresponding processing on the substrate, for example, performing an etching (ETCH) process to pattern the base 100 or the material film layer 101 (Pattern), and / or, performing an ion implantation (IMP) process to form a corresponding ion implantation area 100a in the base 100, etc., and then removing the photoresist 102 and performing relevant processing techniques of the next stage. This is a method frequently used in the entire manufacturing process of semiconductor devices.

[0003] During processes such as etching or ion implantation, the photoresist will denature due to ion bombardment, and further form a crust 102a. Typically, after the etching or ion implantation process is completed under the masking of the patterned photoresist 102, a wet cleaning method (i.e., wet stripping) is used to remove the photoresist 102. However, the crust 102a formed by the ion bombardment of the photoresist 102 is sometimes not completely removed by the wet cleaning process, forming a residue 103 covering the substrate (e.g., the pattern formed after etching), thereby affecting the process performance of the next stage and causing a decrease in product yield.

[0004] To address the problem that wet cleaning methods for removing photoresist can produce difficult-to-remove residues on the substrate, there are currently two main solutions in the existing technology:

[0005] 1. Different wet cleaning solutions are provided for different residue components to remove photoresist and improve the removal effect. This method is too slow and has low production efficiency. In addition, it is difficult to find the most suitable cleaning solution for the removal of certain residue components, so it has certain limitations.

[0006] 2. Use oxygen plasma ashing (Asher) to remove the photoresist. Optionally, wet cleaning can be performed after ashing. Oxygen plasma ashing utilizes the highly reactive monatomic oxygen in the oxygen plasma to readily react with the hydrocarbon-oxygen polymers in the photoresist, generating volatile reactants and removing the photoresist. However, this method may cause secondary effects on the exposed silicon substrate surface (e.g., ion bombardment defects and silicon oxide formation). Summary of the Invention

[0007] The object of the present invention is to provide a photoresist removal method and a semiconductor device manufacturing method, which can effectively remove the photoresist and reduce the residue after the photoresist is removed.

[0008] To achieve the above object, the present invention provides a photoresist removal method, which comprises:

[0009] placing a substrate having a photoresist to be removed on its surface into a corresponding plasma processing chamber;

[0010] A corresponding oxygen-free gas is introduced into the plasma processing chamber and plasma excitation is performed to generate corresponding radiation, and the radiation acts on the surface of the photoresist to remelt the surface of the photoresist, thereby removing the hard crust on the surface of the photoresist;

[0011] The substrate is wet cleaned to remove the photoresist.

[0012] Optionally, the photoresist is a patterned photoresist, and the plasma processing chamber is a process chamber in which the substrate is previously subjected to corresponding plasma processing under the mask of the patterned photoresist.

[0013] Optionally, the plasma processing is etching or ion implantation, and the plasma processing chamber is a process chamber of an etching machine or a process chamber of an ion implantation machine.

[0014] Optionally, at least one of the following process parameters is included:

[0015] (1) The oxygen-free gas introduced includes at least one of HBr, H2, Ar, N2, and He;

[0016] (2) The source power used for plasma excitation is 800W to 1800W;

[0017] (3) The bias power during plasma excitation is 800W to 1800W;

[0018] (4) The rays produced include ultraviolet rays.

[0019] Optionally, the plasma processing chamber is an inductively coupled plasma processing chamber or a capacitively coupled plasma processing chamber.

[0020] Based on the same inventive concept, the present invention also provides a method for manufacturing a semiconductor device, which includes:

[0021] providing a substrate, and forming a patterned photoresist on the substrate;

[0022] Under the mask of the photoresist, performing a first-stage plasma processing on the substrate;

[0023] The photoresist removal method of the present invention is used to remelt the surface of the photoresist, thereby removing the hard shell on the surface of the photoresist, and wet cleaning is performed on the substrate to remove the photoresist.

[0024] Optionally, in the semiconductor device manufacturing method, the step of providing a substrate includes: providing a base, and covering the base with a corresponding material film layer.

[0025] Optionally, the semiconductor device manufacturing method further includes: after removing the photoresist, performing next stage processing on the substrate.

[0026] Optionally, the first stage plasma processing is: under the mask of the photoresist, etching to open the material film layer, and stopping the etching at the substrate surface or at a partial depth of the substrate;

[0027] Alternatively, the steps of the first stage plasma processing include: etching open the material film layer under the mask of the photoresist, and stopping the etching at the surface of the substrate or at a partial depth of the substrate; and performing corresponding ion implantation on the substrate under the mask of the photoresist and the material film layer.

[0028] Optionally, the semiconductor device manufacturing method further comprises, after removing the hard crust on the surface of the photoresist and before wet cleaning the substrate, performing a second stage plasma processing on the substrate under the mask of the photoresist.

[0029] Optionally, the second stage plasma processing step includes: etching away a portion of the thickness of the substrate under the mask of the photoresist, and / or, performing ion implantation on the substrate under the mask of the photoresist.

[0030] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:

[0031] 1. When it is necessary to remove the photoresist on the substrate, the corresponding oxygen-free gas is first introduced into the plasma processing chamber and plasma excitation is performed to generate corresponding rays and act on the surface of the photoresist, so that the surface of the photoresist is remelted, thereby removing the hard shell on the surface of the photoresist. This can effectively improve the subsequent wet cleaning ability to remove the photoresist, shorten the wet cleaning time, and effectively remove the photoresist while effectively avoiding the generation of residues after wet cleaning to improve the product yield.

[0032] 2. It mainly utilizes the effect of the rays generated after plasma excitation of oxygen-free gas (cutting the main molecular chain of the polymer in the hard shell on the surface of the photoresist, and a large number of side chain groups are separated from the main molecular chain and act as plasticizers to increase the activity of short-chain and linear high molecular polymers) to remelt the photoresist surface (that is, the polymer in the hard shell on the surface of the photoresist is reorganized and reaches the minimum surface free energy), thereby removing the hard shell on the surface of the photoresist. Therefore, it can effectively avoid the problem of secondary impact of existing dry stripping processes such as plasma ashing process on the exposed substrate.

[0033] 3. A solution for removing the hard crust on the surface of the photoresist by introducing the corresponding oxygen-free gas and performing plasma excitation. According to the photoresist with different compositions and the hard crust on the surface, the process parameters such as the flow rate of the oxygen-free gas, source power, bias power and processing time are adaptively adjusted. This can improve the photoresist remelting effect, and thus improve the effect of the photoresist cleaning and removal method. Therefore, it has high universal applicability.

[0034] 4. The plasma chamber into which the corresponding oxygen-free gas is introduced and plasma excitation is the process chamber in which the substrate is previously subjected to plasma processing under the photoresist mask. Therefore, this step does not require the substrate to be transferred to the machine, which is conducive to simplifying the process and reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.

[0036] Figure 1 It is a schematic diagram of a device cross-sectional structure in an existing semiconductor device manufacturing method.

[0037] Figure 2 It is a flow chart of a photoresist stripping method according to a specific embodiment of the present invention.

[0038] Figure 3 It is a schematic diagram of a cross-sectional structure of a device in a method for manufacturing a semiconductor device using the photoresist stripping method of the present invention according to an embodiment of the present invention.

[0039] Figure 4It is a flow chart of a method for manufacturing a semiconductor device using the photoresist stripping method of the present invention according to another embodiment of the present invention.

[0040] Figure 5 yes Figure 4 Schematic diagram of the device cross-sectional structure in the semiconductor device manufacturing method shown. DETAILED DESCRIPTION

[0041] In the following description, a large number of specific details are given to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, some technical features known in the art are not described to avoid confusion with the present invention. It should be understood that the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present invention to those skilled in the art. The same reference numerals throughout represent the same elements. It should be understood that when an element is referred to as being "connected to" or "coupled to" another element, it can be directly connected to the other element, or there can be intervening elements. Conversely, when an element is referred to as being "directly connected to" another element, there are no intervening elements. When used herein, the singular forms "a," "an," and "said / the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "comprising" is used to identify the presence of certain features, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups. As used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0042] The technical solutions proposed by the present invention are further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the accompanying drawings are in a very simplified form and are not to exact scale, and are only used to facilitate and clearly illustrate the embodiments of the present invention.

[0043] Please refer to Figure 2 An embodiment of the present invention provides a photoresist removal method, which can be applied to any process node in any semiconductor device manufacturing process where photoresist removal is required. The photoresist removal method includes the following steps:

[0044] S11, placing a substrate with a photoresist to be removed on its surface into a corresponding plasma processing chamber;

[0045] S12, introducing a corresponding oxygen-free gas into the plasma processing chamber and performing plasma excitation to generate corresponding radiation, wherein the radiation acts on the surface of the photoresist to remelt the surface of the photoresist, thereby removing the hard crust on the surface of the photoresist;

[0046] S13, performing wet cleaning on the substrate to remove the photoresist.

[0047] Please refer to Figure 3 In (A) and (B), in step S11, the photoresist 202 to be removed on the surface of the substrate is generally a patterned photoresist, which is formed on the substrate by a corresponding photolithography process and is used to define the area where the substrate needs to be subjected to corresponding plasma processing (etching, ion implantation, etc.). Therefore, under the mask of the photoresist 202, the substrate is subjected to corresponding plasma processing. The plasma processing can be etching or ion implantation, or etching first and then ion implantation, or ion implantation first and then etching, under the mask of the patterned photoresist. During the plasma processing at this stage, the photoresist 202 is easily denatured due to the ion bombardment of the plasma, and further forms a crust 202a on the surface of the photoresist 202. When the photoresist 202 needs to be removed by a wet cleaning process later, these crusts 202a may not be completely removed and form residues (such as residues) on the substrate. Figure 1 Therefore, it is necessary to process the hard shell in the subsequent step S12 to avoid residues when the photoresist is removed by wet cleaning.

[0048] As an example, the plasma processing chamber (not shown) used in step S11 is the process chamber in which the substrate was previously subjected to corresponding plasma processing under the mask of the patterned photoresist, such as the process chamber of an etching machine or the process chamber of an ion implantation machine. Therefore, in step S11, the substrate is maintained in the process chamber of the previous plasma processing without having to be transferred, and then step S12 is subsequently performed in the process chamber of the plasma processing, which is conducive to simplifying the process and reducing costs.

[0049] As an example, the plasma processing chamber in step S11 is an inductively coupled plasma (ICP) processing chamber or a capacitively coupled plasma (CCP) processing chamber.

[0050] As an example, in step S11, the step of providing a substrate having a photoresist to be removed on the surface thereof includes:

[0051] First, please refer to Figure 3 In step (A), a substrate 200 is provided, and a material layer 201 is formed on the substrate 200 by any suitable process such as chemical vapor deposition, spin coating, atomic layer deposition, plasma enhanced deposition, thermal oxidation, thermal nitridation, wafer bonding, etc. The substrate 200 can be any suitable substrate material in the art, such as silicon (Si), silicon on insulator (SOI), silicon germanium (SiGe), silicon carbide (SiC), gallium arsenide, etc. The material layer 201 can be any suitable material in the art, and can be a single layer material or a composite film layer formed by stacking multiple layers of different materials, and can include at least one of silicon oxide, silicon nitride, silicon oxynitride, a low-k dielectric having a dielectric constant k lower than that of silicon oxide, a high-k dielectric having a dielectric constant k higher than that of silicon oxide, metal nitride, polycrystalline silicon, amorphous silicon, amorphous carbon, etc. Depending on the device design and manufacturing requirements, the material layer 201 can serve as a device structural layer that needs to be partially retained from beginning to end (such as a gate oxide layer, a passivation layer, or an interlayer dielectric layer, etc.), or it can be an etch barrier layer, an etch stop layer, or a hard mask layer, etc. In addition, it should be understood that the substrate 200 can be a bare silicon wafer or a wafer that has undergone corresponding process processing, and some structures (such as shallow trench isolation structures, etc.) can be formed therein, and the material layer 201 can be a film layer that has not been processed in any way, or it can be a film layer that has undergone corresponding process processing (such as chemical mechanical polishing, local patterning, etc.). The present invention does not impose any specific limitations on this.

[0052] Next, please refer to Figure 3 In (A), a substrate is placed on a photolithography machine (not shown), a photoresist is spin-coated on the material layer 201 to a desired thickness, and then the coated photoresist 202 is subjected to a series of photolithography processes such as exposure and development, thereby patterning the photoresist 202, i.e., forming a patterned photoresist on the substrate.

[0053] Afterwards, please refer to Figure 3 In step (B), the substrate is subjected to plasma etching under the mask of the photoresist 202. This etching can completely open the material layer 201 and stop on the top surface of the substrate 200. Alternatively, after etching open the material layer 201, a portion of the thickness of the substrate 200 is further removed (i.e., the etching stops within the portion of the thickness of the substrate 200), thereby forming a groove 200a in the substrate 200. Thus, plasma processing of the substrate is completed under the mask of the photoresist 202.

[0054] It should be understood that in other examples of this embodiment, the plasma processing chamber (not shown) used in step S11 may also be different from the process chamber previously used to perform the corresponding plasma processing on the substrate under the mask of the patterned photoresist. That is, in step S11, the substrate that has undergone the corresponding plasma processing needs to be transferred from the process chamber in which the plasma processing was performed to the plasma processing chamber before the subsequent step S12 is performed. In this manner, the same plasma processing chamber does not need to be compatible with two different processes, thereby relatively reducing the equipment requirements for the plasma processing chamber and the plasma processing chamber.

[0055] Please refer to Figure 3 In step (C), in step S12, any suitable oxygen-free gas is introduced into the plasma processing chamber, and the oxygen-free gas is excited by plasma to generate deep ultraviolet (UV), vacuum ultraviolet (Vacuum Ultra Violet) and deep ultraviolet (UV). Violet (VUV) and other corresponding rays, and these rays act on the hard shell 202a on the surface of the photoresist 202, and can even act on the photoresist 202 with a thickness below the hard shell 202a. The energy in the rays can not only cut the main molecular chain of the polymer in the hard shell 202a to change the hardness of the hard shell 202a and make it softer, but also further break the chemical bonds such as COC and C=O in the polymer of the hard shell 202a and the partial thickness of the photoresist 202 below it, causing a large number of corresponding side chain groups to detach from the main molecular chain of the polymer to form a plasticizer, thereby increasing the activity of the short chain and linear high molecular polymers in the hard shell 202a and the partial thickness of the photoresist 202 below it, causing the polymers in the hard shell 202a and the partial thickness of the photoresist 202 below it to reorganize to achieve the minimum surface free energy, thereby causing the hard shell 202a and the partial thickness of the photoresist 202 below it to reflow, thereby removing the hard shell 202a on the surface of the photoresist 202. The photoresist after the hard shell 202a is removed and remelted is denoted as 202'.

[0056] Optionally, the oxygen-free gas introduced into the plasma processing chamber in step S12 may include at least one of HBr, H2, Ar, N2, and He. As an example, HBr is selected as the oxygen-free gas, which can generate UV rays and VUV rays, causing the surface of the photoresist 202 to remelt quickly, thereby removing the hard crust 202a.

[0057] Optionally, when the oxygen-free gas is excited into plasma in step S12, the source power used in the plasma processing chamber is 800 W to 1800 W. By controlling the source power, the energy of the radiation generated during plasma activation is changed to better match the composition of the photoresist 202 and the hard crust 202a on its surface, thereby improving the effect and efficiency of photoresist remelting.

[0058] Optionally, when the oxygen-free gas is excited into plasma in step S12, the bias power used in the plasma processing chamber is 800 W to 1800 W. The bias power is applied to the substrate 200. By controlling the bias power, the directionality of the radiation generated by the plasma activation can be changed, thereby controlling the thickness of the remelted photoresist 202.

[0059] It should be understood that, for photoresists 202 of different compositions and the hard shell 202a on their surfaces, in step S12, the process parameters such as the flow rate of the oxygen-free gas, source power, bias power and processing time (i.e., plasma excitation time) can be adaptively adjusted, that is, a customized process formula setting can be performed, thereby improving the photoresist remelting effect and ultimately achieving the effect of improving the cleaning and removal of the photoresist, so it has high universal applicability.

[0060] In addition, since step S12 mainly utilizes the effect of the rays generated after plasma excitation of the oxygen-free gas (cutting the main molecular chain of the polymer in the hard shell on the surface of the photoresist, and a large number of side chain groups are separated from the main molecular chain and act as plasticizers to increase the activity of short-chain and linear high molecular polymers) to remelt the surface of the photoresist 202 (that is, the polymer in the hard shell on the surface of the photoresist is reorganized and reaches the minimum surface free energy), and removes the hard shell 202a on the surface of the photoresist 202, it can effectively avoid the problem of secondary impact of the existing plasma ashing process on the exposed substrate.

[0061] Please refer to Figure 3In (D), in step S13, when needing to remove photoresist 202 ', can select any suitable cleaning solution to carry out wet cleaning to substrate, remove photoresist 202 ', for next stage to substrate processing is ready.The process of this wet cleaning can adopt the conventional method in this area, for example, first carry out chemical wet cleaning by chemical cleaning solution, then adopt deionized water to rinse etc., do not describe in detail here.Wherein, owing to removed the hard shell on the photoresist 202 surface in step S12, therefore in this step S13, wet cleaning is improved to the removal ability of photoresist, therefore can remove photoresist 202 ' completely, and can avoid the problem of producing residue on material film layer 201 and substrate 200, and then improve product yield.In addition, owing to wet cleaning is improved to the removal ability of photoresist, therefore is conducive to shortening wet cleaning time.

[0062] Please refer to Figure 2 and Figure 3 Based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing a semiconductor device, which includes:

[0063] First, a substrate (including a base 200 and a material film layer 201 covering the base 200 ) is provided, and a patterned photoresist 202 is formed on the material film layer 201 of the substrate.

[0064] Next, under the masking of the photoresist 202, the substrate is subjected to a first-stage plasma processing. As an example, the first-stage plasma processing includes: etching the material film layer 201 under the masking of the photoresist 202, and stopping the etching at the surface of the substrate 200 or at a portion of the depth of the substrate 200. As another example, the first-stage plasma processing includes: etching the material film layer 201 under the masking of the photoresist 202, and stopping the etching at the surface of the substrate 200 or at a portion of the depth of the substrate 200; and, under the masking of the photoresist 202 and the material film layer 201, performing corresponding ion implantation on the substrate 200 to form an ion implantation region 200a in the substrate 200, wherein the ion implantation can be achieved using at least one of n-type ions (e.g., phosphorus ions, arsenic ions, etc.), p-type ions (e.g., boron ions, etc.), ions that cause substrate amorphization (e.g., silicon ions, etc.), carbon ions, fluorine ions, etc.

[0065] Then, the photoresist removal method of the present invention as described above is used (i.e., the above-mentioned steps S11 to S13) to remelt the surface of the photoresist 202, thereby removing the hard shell 202a on the surface of the photoresist 202, and wet cleaning the substrate and the photoresist 202 to remove the photoresist 202 and avoid the problem of residues on the material film layer 201 and the substrate 200 after wet cleaning, thereby improving the product yield.

[0066] Afterwards, the substrate is processed to the next stage, such as film deposition.

[0067] It should be understood that in the above embodiment, after the first stage of plasma processing is completed, the photoresist 202 has completed its mission and therefore needs to be removed to prepare for the next stage of substrate processing. However, the technical solution of the present invention is not limited thereto.

[0068] In another embodiment of the semiconductor device manufacturing method of the present invention, after completing the first stage of plasma processing and before proceeding to the next stage of substrate processing, if the photoresist 202 has not yet completed its mission, the photoresist removal method of the present invention can be implemented in stages, that is, after completing the first stage of plasma processing, only steps S11 to S12 are performed, and after further performing the corresponding second stage of plasma processing, based on the degree of formation of the hard shell 202a on the surface of the photoresist 202, it is selected to repeat steps S11 to S12 before performing step S13, or to directly perform step S13.

[0069] As an example, the semiconductor device manufacturing method of this embodiment includes the following steps:

[0070] S21, please refer to Figure 4 and Figure 5 In step (A), a substrate (including a base 200 and a material film layer 201 covering the base 200) is provided, and a patterned photoresist 202 is formed on the material film layer 201 of the substrate. The specific process of this step can be referred to the relevant content description of step S11 above, and will not be repeated here.

[0071] S22, please refer to Figure 4 and Figure 5 In (B), the substrate is subjected to a first-stage plasma processing under the mask of the photoresist 202. The first-stage plasma processing is, for example, as follows: under the mask of the photoresist 202, etching open the material film layer 201, and the etching stops at the surface of the substrate 200 or at a partial depth of the substrate 200. Alternatively, the steps of the first-stage plasma processing include, for example, as follows: under the mask of the photoresist 202, etching open the material film layer 201, and the etching stops at the surface of the substrate 200 or at a partial depth of the substrate 200; and, under the mask of the photoresist 202 and the material film layer 201, performing corresponding ion implantation on the substrate 200. The specific process of this step can be referred to the relevant content description of step S11 above, and will not be repeated here.

[0072] S23, please refer to Figure 4 and Figure 5In step (C), the photoresist removal method of the present invention (i.e., steps S11-S12) is used to remelt the surface of the photoresist 202, thereby removing the hard crust 202a on the surface of the photoresist 202. The photoresist after the hard crust 202a is removed and remelted is denoted as 202'. The specific process of this step can be referred to the relevant content of step S12 above and will not be repeated here.

[0073] S24, please refer to Figure 4 and Figure 5 In step (D), the substrate is subjected to a second-stage plasma treatment under the mask of the photoresist 202'. The second-stage plasma treatment may include, for example, etching away a portion of the substrate 200 under the mask of the photoresist 202' and the material film layer 201, and / or performing corresponding ion implantation on the substrate 200 under the mask of the photoresist 202' and the material film layer 201. Since the hard crust 202a produced in step S21 is first removed in step S23, the hard crust 202b on the surface of the photoresist 202' after the second-stage plasma treatment is less severe than when the second-stage plasma treatment is performed directly after the first-stage plasma treatment in the prior art.

[0074] S25, please refer to Figure 4 and Figure 5 In step (E), if the crust 202b is not severe, the above-mentioned step S13 can be directly performed to wet clean the substrate to remove the photoresist 202' and the crust 202b on the surface thereof. In this step, since the crust 202b is not severe, the wet cleaning is more effective in removing the photoresist 202' and the crust 202b on the surface thereof, thereby completely removing the photoresist 202' and the crust 202b on the surface thereof. The problem of residues on the material film layer 201 and the substrate 200 after the wet cleaning can also be avoided, thereby improving the product yield.

[0075] S26 , performing next stage processing on the substrate, such as depositing a corresponding film layer on the material film layer 201 and the surface of the exposed substrate 200 .

[0076] In other embodiments of the present invention, if the hard shell 202b generated during the above-mentioned step S24 is relatively serious, steps S11 to S12 can be performed before performing the above-mentioned step S25 to remelt the photoresist and remove the hard shell 202b on the surface. In this way, the wet stripping effect of step S25 (i.e., step S13) can be achieved, thereby avoiding the problem of residues generated on the material film layer 201 or the substrate 200 after wet cleaning.

[0077] That is to say, in the semiconductor device manufacturing method of each embodiment of the present invention, after forming the patterned photoresist layer and before removing the photoresist by wet cleaning, if the mission of the photoresist 202 has not been completed, the photoresist removal method of the present invention can be implemented in stages. For example, after each pair of substrates completes one stage of plasma processing, steps S11 to S12 are performed once until the mission of the photoresist 202 is completed, thereby avoiding the problem of the hard crust on the photoresist surface being aggravated during the next plasma processing process and affecting the final wet cleaning degumming effect.

[0078] In summary, photoresist stripping method and semiconductor device manufacturing method of the present invention, when needing to remove the photoresist on substrate, first in plasma treatment chamber, pass into corresponding oxygen-free gas and carry out plasma excitation, to produce corresponding ray and act on the photoresist surface, make the photoresist surface remelt, and then remove the hard crust on the photoresist surface, can effectively improve the removal ability of subsequent wet cleaning to the photoresist thus, shorten the wet cleaning time, when effectively removing the photoresist, can also effectively avoid the generation of the residue after wet cleaning removes the photoresist, and then improve product yield, general applicability is high. Moreover, owing to be mainly utilizing the effect of the ray produced after the oxygen-free gas is carried out plasma excitation to make the photoresist surface remelt, remove the photoresist surface hard crust, therefore can effectively avoid the problem that dry stripping processes such as existing plasma ashing process cause secondary impact to exposed substrate.

[0079] The above description is only a description of the preferred embodiment of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure are within the scope of protection of the technical solution of the present invention.

Claims

1. A method for removing photoresist, characterized in that: include: placing a substrate having a photoresist to be removed on its surface into a corresponding plasma processing chamber; A corresponding oxygen-free gas is introduced into the plasma processing chamber and plasma excitation is performed to generate corresponding radiation, and the radiation acts on the surface of the photoresist to remelt the surface of the photoresist, thereby removing the hard crust on the surface of the photoresist; The substrate is wet cleaned to remove the photoresist.

2. The photoresist removal method according to claim 1, wherein: The photoresist is a patterned photoresist, and the plasma processing chamber is a process chamber in which the substrate is previously subjected to corresponding plasma processing under the mask of the patterned photoresist.

3. The photoresist removal method according to claim 2, wherein: The plasma processing is etching or ion implantation, and the plasma processing chamber is a process chamber of an etching machine or a process chamber of an ion implantation machine.

4. The photoresist removal method according to claim 1, wherein: Include at least one of the following process parameters: (1) The oxygen-free gas introduced includes at least one of HBr, H2, Ar, N2, and He; (2) The source power used for plasma excitation is 800W to 1800W; (3) The bias power during plasma excitation is 800W to 1800W; (4) The rays produced include ultraviolet rays.

5. The photoresist removal method according to any one of claims 1 to 4, wherein: The plasma processing chamber is an inductively coupled plasma processing chamber or a capacitively coupled plasma processing chamber.

6. A method for manufacturing a semiconductor device, characterized in that: include: providing a substrate, and forming a patterned photoresist on the substrate; Under the mask of the photoresist, performing a first-stage plasma processing on the substrate; The photoresist removal method according to any one of claims 1 to 5 is used to remelt the surface of the photoresist, thereby removing the hard shell on the surface of the photoresist, and wet cleaning the substrate to remove the photoresist.

7. The method for manufacturing a semiconductor device according to claim 6, wherein: The step of providing a substrate includes: providing a base and covering the base with a corresponding material film layer; and / or, the semiconductor device manufacturing method further includes: after removing the photoresist, performing next stage processing on the substrate.

8. The method for manufacturing a semiconductor device according to claim 7, wherein: The first stage plasma processing is: under the mask of the photoresist, etching to open the material film layer, and the etching stops at the substrate surface or at a partial depth of the substrate; Alternatively, the first stage plasma processing step includes: etching and opening the material film layer under the mask of the photoresist, and stopping the etching at the substrate surface or at a partial depth of the substrate; And, under the masking of the photoresist and the material film layer, corresponding ion implantation is performed on the substrate.

9. The method for manufacturing a semiconductor device according to any one of claims 6 to 8, wherein: After removing the hard crust on the surface of the photoresist and before wet cleaning the substrate, the method further comprises: performing a second-stage plasma processing on the substrate under the mask of the photoresist.

10. The method for manufacturing a semiconductor device according to claim 9, wherein: The second stage plasma processing step includes: etching away a portion of the thickness of the substrate under the mask of the photoresist, and / or performing ion implantation on the substrate under the mask of the photoresist.

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