A method for preparing fept pseudo-spin valve material

A pseudo-spin valve and substrate technology, which is applied in spin exchange-coupled multilayer films, magnetic film-to-substrate applications, inductor/transformer/magnet manufacturing, etc. problem, to achieve the effect of simple preparation, convenient control and low cost

Active Publication Date: 2017-09-22
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

However, these control methods require precise control of process parameters, which are highly dependent on material systems and process parameters.

Method used

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  • A method for preparing fept pseudo-spin valve material
  • A method for preparing fept pseudo-spin valve material
  • A method for preparing fept pseudo-spin valve material

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[0021] figure 1 The preparation conditions of the sample are as follows: firstly, the Cu-Zn-Al substrate is subjected to pre-stretching, surface acid treatment and surface polishing treatment, wherein the thickness of the substrate is 0.5 mm, and the pre-stretch amount is 15%; the surface acid treatment The pH value is 6, and the acidification time is 3 minutes; surface polishing treatment: mechanical polishing and chemical polishing, and the surface roughness after polishing is 0.5 nanometers. After the treatment, the surface is cleaned with acetone and alcohol to obtain a Cu-Zn-Al surface with a clean surface. Then, utilize magnetron sputtering method, on the Cu-Zn-Al substrate after above-mentioned treatment, deposit FePt atom (thickness is ), Ru atoms (thickness is ), FePt atoms (thickness is ), Ta atoms (thickness is ), thus preparing Cu-Zn-Al substrate / Multi-layer film, the background vacuum before sputtering deposition is 1×10 - 5 Pa, the argon pressure du...

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Abstract

The invention provides a method for preparing an FePt pseudo-spin-valve material, and belongs to the field of magnetic materials or spintronics materials. According to the method, prestretching treatment, surface acidification descaling treatment and surface polishing treatment are carried out on a copper-zinc-aluminum Cu-Zn-Al memory alloy substrate; a thin film material is deposited on the Cu-Zn-Al substrate; the structure of the thin film material is iron-platinum FePt / ruthenium Ru / iron-platinum FePt / tantalum Ta; thermal treatment is carried out in a vacuum environment after deposition is completed to induce ordered arrangement of atoms of two FePt layers to form hard magnetic property; and finally, lithographic processing is carried out on a thin film system to obtain a nano columnar array structure and an electrode is led out. Switching of a high resistance state and a high resistance state, namely a pseudo-spin-valve function is achieved by controlling a temperature and controlling a stress state of the thin film system. The method has the characteristics of being simple in preparation and convenient to control; and a high-cost rare metal or an expensive additional device is not needed, so that the method has the advantages of high efficiency, low cost and the like, and is suitable for being applied to a spintronics technology in the future.

Description

technical field [0001] The invention belongs to the field of magnetic materials or spintronics materials, relates to a preparation method of a pseudo-spin valve material, and in particular provides a method for regulating the magnetic moment arrangement of two ferromagnetic layers in a FePt pseudo-spin valve material by using stress (parallel arrangement or antiparallel arrangement), so as to achieve a significant change in magnetoresistance. Background technique [0002] Pseudo-spin valve (PSV) materials can sensitively detect changes in external weak magnetic fields, so they have potential application backgrounds in high-sensitivity read heads, magnetic sensors, and magnetic random access memories. The traditional pseudo-spin valve material structure is: ferromagnetic layer (FM1) / non-magnetic isolation layer (NM) / ferromagnetic layer (FM2) (such as Figure 4 shown). Usually an external magnetic field is required to change the magnetic moment arrangement of the two magn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F41/18H01F41/30H01F10/32
CPCH01F10/32H01F41/18H01F41/302
Inventor 冯春唐晓磊尹建娟蒋旭敏于广华
Owner UNIV OF SCI & TECH BEIJING
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