Vertical orientation strong magnetic dielectric film and preparation method thereof

Abstract

The invention relates to a strong magnetic dielectric film, and in particular relates to a vertical orientation strong magnetic dielectric film and a preparation method thereof. The technical scheme is as follows: the vertical orientation strong magnetic dielectric film comprises a substrate, a buffer layer, a vertical orientation strong magnetic dielectric protective layer and a protective layer sequentially stacked, wherein the substrate is a single crystal, polycrystal or amorphous base plate; the buffering layer is made of inorganic nonmetal nitride ceramic with a hexagonal crystal structure; the vertical orientation strong magnetic dielectric protective layer is a samarium-cobalt diaphragm, an aluminum-nickel-cobalt diaphragm, an iron-platinum diaphragm, an iron-palladium nitride, a cobalt-platinum diaphragm or a cobalt-palladium diaphragm; the protective layer is made of transition metal, nitride diaphragm material or oxide diaphragm material. The vertical orientation strong magnetic dielectric film and the preparation method thereof provided by the invention have the advantages of being small in volume, vertical in magnetization direction, small in size of grains serving as a storage unit, large in coercivity and high in stability, and is simple in production technology and wider in application range.

Description

technical field [0001] The invention relates to a ferromagnetic medium film, in particular to a vertically oriented ferromagnetic medium film and a preparation method thereof. Background technique [0002] Materials with high magnetocrystalline anisotropy have the function of mutual conversion between mechanical energy and electromagnetic energy. Using its energy conversion function and various physical effects of magnetism, such as magnetic resonance effect, magnetomechanical effect, magnetochemical effect, magnetic biological effect, magnetoresistance effect, Hall effect, etc., high magnetic crystal anisotropy materials can be made into Various forms of functional devices. These functional devices have become the core functional devices in high-tech fields such as computers, communication networks, aerospace, transportation, home appliances and information records. [0003] In the field of information storage, increasing the density of perpendicular magnetic recording me...

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Problems solved by technology

But this in-plane oriented film is not suitable for perpendicular magnetic recording

[0005] In order to prepare Sm-Co thin films grown along the phase orientation of the substrate, expensive Al 2 o 3 (0001) single crystal substrate and use precious metal Ru as buffer layer, take epitaxial growth method; but the coercive force of the film prepared by this method is low, only 1.35T room temperature coercive force, the most important is Al 2 o 3 (0001) The cost of single crystal substrate is very high

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