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Method for directly driving ordering of atoms of magnetic recording medium film by current

A magnetic recording medium and film technology, which is applied in the manufacture of record carriers and other directions, can solve the problems of large heat energy consumption and low effective utilization rate, and achieve the effects of simple preparation, simple structure and improved effective utilization rate.

Inactive Publication Date: 2010-12-22
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of electric current direct drive magnetic recording medium L1 0 - The Fe and Pt atomic order method of FePt film solves the industrial production problems of high heat energy consumption and low effective utilization rate in the traditional annealing process, and at the same time, the cost is low and the equipment is simple

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  • Method for directly driving ordering of atoms of magnetic recording medium film by current
  • Method for directly driving ordering of atoms of magnetic recording medium film by current
  • Method for directly driving ordering of atoms of magnetic recording medium film by current

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Embodiment 1

[0015] Embodiment one, figure 1 The representative thin film sample is the implementation case 1 of current-driven atomic order of the present invention, and its preparation process conditions are: the background vacuum degree of the sputtering chamber is 1×10 -5 , Argon (99.99%) pressure is 0.4Pa during sputtering; substrate temperature is 20°C. After the deposition is completed, the film is lowered to room temperature, and Cu electrodes are drawn from both ends of the film and connected to a constant current source. Put the sample into the vacuum furnace and wait until the vacuum degree in the furnace is 2×10 -5 At Pa, a current (provided by a constant current source) was passed through both ends of the film, the magnitude of the current was 300mA, and the duration of the current was 5 seconds.

[0016] figure 2 The representative thin film sample is the comparative case 1 of traditional vacuum annealing, and its preparation process conditions are: the background vacuum ...

Embodiment 2

[0017] Embodiment two, image 3 The representative thin film sample is the implementation case 2 of current-driven atomic order of the present invention, and its preparation process conditions are: the background vacuum degree of the sputtering chamber is 4×10 -5 , Argon (99.99%) pressure is 0.7Pa during sputtering; substrate temperature is 400°C. After the deposition is completed, the film is lowered to room temperature, and Cu electrodes are drawn from both ends of the film and connected to a constant current source. Put the sample into the vacuum furnace and wait until the vacuum degree in the furnace is 2×10 -5At Pa, an electric current (provided by a constant current source) is applied to both ends of the film, the magnitude of the electric current is 100 mA, and the electrification time is 15 seconds.

[0018] Figure 4 The representative film sample is the comparative case 2 of traditional vacuum annealing, and its preparation process conditions are: the background v...

Embodiment 3

[0019] Embodiment three, Figure 5 The representative thin film sample is the implementation case 3 of current-driven atomic order of the present invention, and its preparation process conditions are: the background vacuum degree of the sputtering chamber is 7×10 -5 , Argon (99.99%) pressure is 1.2Pa during sputtering; substrate temperature is 800°C. After the deposition is completed, the film is lowered to room temperature, and Cu electrodes are drawn from both ends of the film and connected to a constant current source. Put the sample into the vacuum furnace and wait until the vacuum degree in the furnace is 2×10 -5 At the time of Pa, a current (provided by a constant current source) was passed through both ends of the film, the magnitude of the current was 50 mA, and the duration of the current was 300 seconds.

[0020] Figure 6 The representative thin film sample is the comparative case 3 of traditional vacuum annealing, and its preparation process conditions are: the ...

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Abstract

The invention relates to a method for directly driving ordering of atoms of a magnetic recording medium film by current, belonging to the technical field of high-density magnetic recording media material. The method of the invention comprises the following steps: sequentially depositing iron platinum FePt atoms and tantalum Ta atoms the thickness of which is in a range of 50-500 angstrom on a glass substrate by a magnetron sputtering method, wherein the background vacuum degree is 1*10<-5>-7*10<-5>Pa, the pressure of argon gas (99.99%) when sputtering is 0.4-1.2Pa, and the temperature of the substrate is 20-800 DEG C; after deposition, cooling the film to the room temperature, leading out Cu electrodes from the two ends of the film and connecting with a constant current source; and putting a sample into a vacuum furnace, and when the vacuum degree in the furnace is 2*10<-5>-7*10<-5>Pa, conducting current at the two ends of the film, wherein the current size is 50mA-1000mA, and the conduction time is 5s-300s. In the invention, the Fe atoms and the Pt atoms are driven to move in order by the heat generated by the resistance of the film, thereby greatly reducing heat loss in the traditional annealing process, and improving the effective utilization ratio of heat; and the invention has simple structure and low cost and is suitable for production in the future.

Description

technical field [0001] The invention belongs to the technical field of high-density magnetic recording medium materials, and in particular provides a current direct drive magnetic recording medium L1 0 -A method for atomic ordering of FePt thin films. Background technique [0002] Today's era is an information age, and a large amount of information exchange puts forward higher requirements for the storage density and stability of information. Hard disk magnetic recording storage has the characteristics of large capacity, high read and write speed, and rewritable, etc., and occupies a mainstream position in information processing equipment represented by computers. In the past ten years, hard disk magnetic recording technology has been developed rapidly. In August 2008, Hitachi achieved a surface density of 610Gb / in by applying the existing perpendicular magnetic recording technology and tunneling magnetoresistive head technology 2 . (http: / / www.physorg.com / news136815757....

Claims

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Application Information

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IPC IPC(8): G11B5/84
Inventor 冯春杨美音于广华
Owner UNIV OF SCI & TECH BEIJING
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