Gallium arsenide single crystal and method for producing the same

Abstract

Gallium arsenide single crystal with a carrier concentration of 1×10 18 ~4×10 18 / cm 3 , mobility is 1700~2600cm 2 / v·s, and the manufacturing method is as follows: before the growth of the gallium arsenide single crystal, Si x As y The compound is distributed in a gallium arsenide polycrystal, and the B atom density of the resulting gallium arsenide single crystal is at least 20% lower than the B atom density of a gallium arsenide single crystal produced with elemental Si as a dopant at the same Si carrier concentration, and the B content is ≦5×10 18 / cm 3 This manufacturing method can reduce the "B contamination" of the gallium arsenide single crystal and improve the performance of the gallium arsenide single crystal.

Description

[Technical Field]

[0001] This invention relates to the field of crystal synthesis, and more particularly to gallium arsenide single crystals and methods for producing the same. [Background technology]

[0002] Gallium arsenide (GaAs) is an important semiconductor material possessing high speed, high frequency, high temperature resistance, and low noise properties. Compared to silicon single crystal, gallium arsenide has higher mobility and better photoelectric performance, and is currently widely used in microelectronics and optoelectronics.

[0003] In conventional n-type gallium arsenide single crystal growth techniques, VGF / VB (vertical gradient solidification / vertical Britschmann method) is typically used. Since boron oxide is required as a coating and wetting agent in the n-type gallium arsenide single crystal growth process, the reaction vessel PBN (pyrolysis boron nitride), gallium arsenide, and boron oxide used in VGF form a wetted surface. Simultaneously, to improve the carrier concentration, a silicon element, acting as a dopant, is added to the n-type gallium arsenide single crystal growth process. However, the following reaction occurs between the silicon element and boron oxide: The image JPEG0007834386000001.jpg566 contains a large amount of element B, which contaminates the gallium arsenide single crystal produced, thus reducing the performance of the gallium arsenide single crystal. [Overview of the project] [Problems that the invention aims to solve]

[0004] To reduce the possibility of contamination from B during the manufacturing of gallium arsenide single crystals and to improve the performance of gallium arsenide single crystals, this application provides gallium arsenide single crystals and a method for manufacturing the same. [Means for solving the problem]

[0005] In a first aspect, the present application provides a gallium arsenide single crystal using the following technical solution.

[0006] A gallium arsenide single crystal, wherein the gallium arsenide single crystal has a carrier concentration of 1×10 18 ~4×10 18 / cm 3 , a mobility of 1700 - 2600 cm 2 / v·s, and at the same Si carrier concentration, the B atom density of the gallium arsenide single crystal produced with an Si x As y compound as a dopant is at least 20% less than the B atom density of the gallium arsenide single crystal produced with elemental Si as a dopant, and the B content of the gallium arsenide single crystal ≦ 5×10 18 / cm 3 .

[0007] In the conventional manufacturing technology of gallium arsenide single crystals, elemental Si, boron oxide, and gallium arsenide polycrystals are co-doped. On the other hand, in the present application, first, the Si element is converted into an Si x As y compound, and then the growth process of the gallium arsenide single crystal is carried out. Among the produced gallium arsenide single crystals, the effective ratio of silicon is higher, and the B element is less likely to contaminate the gallium arsenide single crystal. At the same Si carrier concentration, the B content in the gallium arsenide single crystal produced with an Si x As y compound as a dopant is lower. And the higher the Si carrier concentration, the more significant the effect.

[0008] <照 In addition, the gallium arsenide single crystal produced in the present application has a mobility improved by at least 20% compared to the manufacturing process of the conventional gallium arsenide single crystal at the same carrier concentration, and the optoelectronic performance of the single crystal is excellent.

[0009] In a second aspect, the present application provides a method for manufacturing a gallium arsenide single crystal using the following technical solution.

[0010] Note: There seems to be a formatting issue with the tag <照 which might be a misprint. It's left as-is in the translation.A method for producing a gallium arsenide single crystal, wherein, before growing the gallium arsenide single crystal, Si is used in the following manner. x As y The process includes distributing the compound in polycrystalline gallium arsenide, Method 1 is Si x As y The compound was synthesized simultaneously during the gallium arsenide polycrystalline synthesis stage, and then single crystals were grown. Method 2 involves first Si x As y Synthesize the compound, and further Si x As y The compound and the raw material, polycrystalline gallium arsenide, are placed in a single crystal growth vessel, and a single crystal is grown.

[0011] In this application, Si x As y The compound, as a dopant, is more Si than the conventional dopant element Si. x As y The silicon valency of the compound increases, which helps to increase the probability that silicon occupies the gallium site, and thus the following reaction occurs: The execution of JPEG0007834386000002.jpg566 is suppressed, and thus the gallium arsenide single crystal becomes less susceptible to contamination by B, resulting in a B content that is lower than the Si content. At the same carrier concentration, the mobility of the single crystal produced in this application is 20% higher than that of a gallium arsenide single crystal produced with elemental Si as a dopant.

[0012] If you select Method 1, the specific steps are as follows: (1) Filling: High-purity arsenic and high-purity gallium are placed in the first PBN boat and the second PBN boat in order in a weight ratio of (107-128):100. The silicon to be doped was placed in the tail end of the second PBN boat equipped with gallium, and the weight ratio of silicon to gallium was set to (0.2~5):10000. (2) Baking of materials: The first PBN boat and the second PBN boat are baked in a vacuum environment, with a vacuum level of 1 × 10⁻⁶. -4 ~9×10 -2 Set to Pa and bake for 2-4 hours. (3)Si x As y Synthesis of compound-containing gallium arsenide polycrystalline material: After treating a quartz tube by welding it in a furnace, the first PBN boat is heated to 620-660°C, and the second PBN boat is heated to 1200-1400°C and kept warm for 2-4 hours, and gallium arsenide polycrystalline material and Si x As y The compound is synthesized, and the temperature gradient is controlled so that the temperature of the second PBN boat decreases in a gradient from start to finish, with a temperature drop gradient of 2-4°C / cm. (4) Extraction of polycrystalline material: Si x As y We extracted the gallium arsenide polycrystalline material containing the compound. (5) Single crystal growth: Fabricated Si x As y A polycrystalline gallium arsenide containing a compound and boron oxide are placed in a single-crystal growth container and then placed in a furnace to grow the crystals.

[0013] By using the above technical solution, the element Si can be simultaneously synthesized during the synthesis of gallium arsenide polycrystals. x As y It can be converted into a compound, Si x As y The compound and the gallium arsenide polycrystal do not need to be formed in stages.

[0014] Preferably, the weight ratio of silicon to gallium to be doped in the filling step is (1-1.2):10000.

[0015] If you select Method 2, the specific steps are as follows: S1, Si x As y compound synthesis (1) Filling: High-purity arsenic and high-purity silicon are placed in the first quartz boat and the second quartz boat in a weight ratio of (0.5-5):1, respectively. (2) Baking of materials: The first quartz boat and the second quartz boat are baked in a vacuum environment, with a vacuum level of 1 × 10⁻⁶. -4 ~9×10 -2 Set to Pa and bake for 2-4 hours. (3) Synthetic Si x As y Compound: Heat the first quartz boat to 650-700°C, heat the second quartz boat to 1050-1450°C, maintain temperature for 2-4 minutes, Si x As y The compound was synthesized, and the temperature of the second quartz boat was lowered using a temperature gradient, with the temperature gradient set to 5-8°C / cm. S2, single crystal growth Manufactured Si x As y The compound, polycrystalline gallium arsenide, and boron oxide are placed in a single-crystal growth vessel and then placed in a furnace to grow the crystals.

[0016] Using the above technical solution, According to the reaction principle of JPEG0007834386000003.jpg452, Si x As y To manufacture compounds, Si x As y We will jointly acquire polycrystalline gallium arsenide as a raw material to further improve the performance of gallium arsenide single crystals.

[0017] Preferably, in the filling process of step S1, the weight ratio of high-purity arsenic to high-purity silicon is (1 to 1.2):1.

[0018] Preferably, the Si of step S1 x As y In the compound synthesis process, the second quartz boat is heated to 1120-1150°C.

[0019] Preferably, in step S2, Si x As y The weight ratio of the compound, gallium arsenide polycrystalline, and boron oxide when mixed is (0.2~2):10000:(15~100). [Effects of the Invention]

[0020] In short, this application has the following beneficial effects.

[0021] In this application, instead of the element Si, Si x As y By using a compound as a dopant and adding it to a polycrystalline gallium arsenide before the growth of a gallium arsenide single crystal, Si x As y The higher silicon valency of the compound helps increase the probability that silicon will occupy the gallium sites, thus reducing the likelihood of boron dissolution contaminating gallium arsenide single crystals and increasing the carrier concentration of the fabricated gallium arsenide single crystals to 1 × 10⁻¹⁰. 18 ~4×10 18 / cm 3 This allows for a lower content of B at the same carrier concentration, i.e., Si x As y The B atom density of gallium arsenide single crystals produced using a compound dopant is at least 20% lower than that of gallium arsenide single crystals produced using elemental silicon as a dopant. Furthermore, this effect becomes more pronounced as the Si carrier concentration increases. Simultaneously, the crystal's mobility increases at the same carrier concentration. [Modes for carrying out the invention]

[0022] In the conventional manufacturing process for n-type photoelectric semiconductor gallium arsenide, elemental silicon (Si) is the main dopant. However, using elemental Si as a dopant inevitably leads to the introduction of a large amount of B melt, resulting in contamination of the manufactured gallium arsenide single crystal wafers with B, and a decrease in the electrical performance of the gallium arsenide single crystal wafers.

[0023] Over many years, scientists have conducted extensive research on the manufacturing process of gallium arsenide single crystals. As a result, it has been discovered that the atomic radius of Si is close to that of As and Ga, given that the atomic radius of Si is 113 pm (covalent radius), the atomic radius of As is 120 pm, and the atomic radius of Ga is 126 pm. Therefore, in gallium arsenide materials, Si can potentially act as a donor impurity in place of Ga atoms, and as an acceptor impurity in place of As atoms. Si can exist in various locations within the crystal, specifically, as silicon replaces gallium sites (Si Ga), b, silicon replacing arsenic sites (Si As ), c) The silicon pendant is located near a grain boundary or a large grain dislocation and does not occupy a lattice position.

[0024] For the reasons stated above, the applicant has chosen to use Si instead of Si x As y By using a compound as a dopant, it is added to the gallium arsenide polycrystalline material before the growth of the gallium arsenide single crystal, increasing the valence of Si, and thus increasing the probability that silicon will occupy the gallium sites. JPEG0007834386000004.jpg6128 Suppresses the execution of the reaction, reduces the possibility of element B entering the solubility, and the B impurity content in the produced gallium arsenide single crystal is 5 × 10 18 / cm 3 The concentration decreases to the following level. This solution is particularly suitable for situations with high carrier concentrations, especially when silicon-doped carrier concentrations are 1 × 10⁻⁶. 18 / cm 3 It is suitable for situations larger than the specified value. At the same carrier concentration, the mobility of the crystals produced in this application is more than 20% higher than that of gallium arsenide single crystals produced with elemental silicon as a dopant.

[0025] Examples Example 1 A 4-inch gallium arsenide single crystal, manufactured according to the following process: (1) Filling: 5.35 kg of high-purity arsenic was taken and placed in the first PBN boat, and 5 kg of high-purity gallium was taken and placed in the second PBN boat, so that the arsenic-gallium ratio was 1.07:1. Furthermore, 0.1g of high-purity silicon was taken and placed in the second PBN boat tail end, and the weight ratio of high-purity silicon to high-purity gallium doping was set to 0.2:10000. The first and second PBN boats are placed horizontally inside a quartz tube, with a distance of 300 mm between them, and a sufficient temperature difference is ensured between them.

[0026] (2) Baking the material: The quartz tube filled with the material is fixed in the oven, a vacuum is created inside the quartz tube, and the vacuum level is set to 1 × 10⁻⁶. -4 Set to Pa and bake for 2 hours.

[0027] (3)Si x As y Synthesis of compound-containing gallium arsenide polycrystalline material: After treating a calcined quartz tube by welding it in a furnace, the first PBN boat was heated to 660°C, the second PBN boat was heated to 1200°C, and the temperature was maintained for 2 hours. x As y The compound was synthesized, Subsequently, the program controls the temperature gradient within the quartz tube so that the temperature of the second PBN boat decreases in a gradient from start to finish, with a horizontal condensation rate of 6 cm / h and a temperature decrease gradient of 4 °C / cm. (4) Extraction of polycrystalline material: When the temperature inside the quartz tube drops to below 200°C, Si x As y We extracted the gallium arsenide polycrystalline material containing the compound. (5) Single crystal growth: Fabricated Si x As y Polycrystalline gallium arsenide containing the compound and boron oxide are placed in a 4-inch crucible, and single-crystal quartz tubes packed with the material are placed into a single-crystal furnace according to the conventional VGF process. After the material is placed into the furnace, single-crystal growth is completed according to the conventional VGF process.

[0028] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000005.jpg27164

[0029] Example 2 A 6-inch gallium arsenide single crystal, manufactured according to the following process: (1) Filling: 6.4 kg of high-purity arsenic was taken and placed in the first PBN boat, and 5 kg of high-purity gallium was taken and placed in the second PBN boat, so that the arsenic-gallium ratio was 1.28:1. Furthermore, 2.5g of high-purity silicon was taken and placed in the second PBN boat tail end, and the weight ratio of high-purity silicon to high-purity gallium doping was set to 5:10000. The first and second PBN boats are placed horizontally inside a quartz tube, with a distance of 300 mm between them, and a sufficient temperature difference is ensured between them.

[0030] (2) Baking the material: The quartz tube filled with the material is fixed in the oven, the inside of the quartz tube is evacuated, and the vacuum level is set to 9 × 10 -2 Set to Pa and bake for 4 hours.

[0031] (3) Synthesis of polycrystalline material: The calcined quartz tubes were placed in a furnace and welded together to process them. The first PBN boat was heated to 620°C, and the second PBN boat was heated to 1400°C. After maintaining the temperature for 4 hours, polycrystalline gallium arsenide was synthesized. Subsequently, the program controls the temperature gradient within the quartz tube so that the temperature of the second PBN boat decreases in a gradient from start to finish, with a horizontal condensation rate of 4 cm / h and a temperature decrease gradient of 2°C / cm. (4) Extraction of polycrystalline material: When the temperature inside the quartz tube drops to below 200°C, Si x As y We extracted the gallium arsenide polycrystalline material containing the compound. (5) Single crystal growth: Fabricated Si x As y Place the compound-containing gallium arsenide polycrystals and boron oxide in a 6-inch crucible. A single-crystal quartz tube filled with material is placed into a single-crystal furnace according to the conventional VGF process. After the tube is placed into the furnace, single-crystal growth is completed according to the conventional VGF process.

[0032] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000006.jpg26164

[0033] Example 3 This is a 6-inch gallium arsenide single crystal, and the difference from Example 2 is that the weight ratio of silicon to gallium to be doped in the filling process is different, with the weight ratio of silicon to gallium to be doped in this example being 1:10000.

[0034] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000007.jpg27164

[0035] Example 4 This is a 6-inch gallium arsenide single crystal, and the difference from Example 1 is that the weight ratio of silicon to gallium to be doped in the filling process is different, with the weight ratio of silicon to gallium to be doped in this example being 1.2:10000.

[0036] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000008.jpg27164

[0037] Example 5 A 4-inch gallium arsenide single crystal, manufactured according to the following process: S1, Si x As y compound synthesis (1) Filling: Take 5g of high-purity arsenic and 10g of high-purity silicon and place them in order into the first quartz boat and the second quartz boat, then place the first quartz boat and the second quartz boat horizontally inside the quartz tube. (2) Baking of the material: Fix the quartz tube filled with the material, evacuate the inside of the quartz tube, set the degree of vacuum to 1×10 -4 Pa, bake for 2 hours, (3) Synthesis of Si x As y compound: After placing the baked quartz tube in a furnace and welding and processing the tube, heat the first quartz boat to 650 °C, heat the second quartz boat to 1050 °C, keep warm for 4 hours, and synthesize the Si x As y compound, the temperature drops in accordance with the temperature gradient inside the quartz tube, set the temperature drop gradient from the beginning to the end of the second quartz boat to 5 °C / cm, when the temperature inside the quartz tube ≤ 200 °C, take out the Si x As y compound, S2, Single crystal growth Take 0.2 g of the produced Si x As y compound, 10 kg of gallium arsenide polycrystal, and 15 g of boron oxide, place them in a crucible, place the crucible in a single crystal quartz tube, put the single crystal quartz tube filled with the material into a single crystal furnace according to the conventional VGF process, and after the input into the furnace is completed, complete the single crystal growth according to the conventional VGF process.

[0038] Test the carrier concentration and mobility of the above-produced crystal by the test method specified in SJ / T11488 - 2015, and show the test results below. JPEG0007834386000009.jpg27164

[0039] Example 6 A 6-inch gallium arsenide single crystal, manufactured according to the following steps, S1, Si x As y Compound synthesis (1) Filling: Take 50 g of high-purity arsenic and 10 g of high-purity silicon and put them into the first quartz boat and the second quartz boat in sequence, place the first quartz boat and the second quartz boat horizontally in the quartz tube, (2) Baking of the material: Fix the quartz tube filled with the material, evacuate the inside of the quartz tube, set the degree of vacuum to 9×l0-2 Set to Pa and bake for 4 hours. (3)Si x As y Compound synthesis: After treating the calcined quartz tubes by welding them in a furnace, the first quartz boat was heated to 700°C, the second quartz boat was heated to 1450°C, and then kept warm for 2 hours. Si x As y The compound was synthesized, The temperature inside the quartz tube decreases according to the temperature gradient, and the program controls the temperature decrease gradient of the quartz tube so that the temperature decrease gradient from the beginning to the end of the second quartz boat is 8°C / cm. When the temperature inside the quartz tube becomes ≤200°C, Si x As y Extract the compound, S2, single crystal growth 20g of manufactured Si x As y The compound, 10 kg of polycrystalline gallium arsenide, and 100 g of boron oxide are placed in a 6-inch crucible. The crucible is then placed in a single-crystal quartz tube. The single-crystal quartz tube filled with the materials is then placed into a single-crystal furnace according to the conventional VGF process. After the material is placed in the furnace, single-crystal growth is completed according to the conventional VGF process.

[0040] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000010.jpg27164

[0041] Example 7 This is a 6-inch gallium arsenide single crystal, and the difference from Example 6 is that in the packing process of step S1, the weight ratio of silicon to gallium is different, with the weight ratio of arsenic to silicon being 1:1 in this example.

[0042] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000011.jpg27164

[0043] Example 8 This is a 6-inch gallium arsenide single crystal, and the difference from Example 6 is that in the packing process of step S1, the weight ratio of silicon to gallium is different, with the weight ratio of arsenic to silicon being 1.2:1 in this example.

[0044] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000012.jpg27164

[0045] Example 9 This is a 6-inch gallium arsenide single crystal, and the difference from Example 8 is that the Si in step S1 is different. x As y In the compound synthesis process, the heating temperature of the second quartz boat differs, and in this example, the heating temperature of the second quartz boat is 1120°C.

[0046] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000013.jpg26164

[0047] Comparative Example A 4-inch gallium arsenide single crystal, manufactured according to the following process: Single crystal growth: Place polycrystalline gallium arsenide, boron oxide, and an appropriate amount of high-purity silicon in a crucible, and place the crucible inside a quartz tube containing the single crystal. A single-crystal quartz tube filled with material is placed into a single-crystal furnace according to the conventional VGF process. After the tube is placed into the furnace, single-crystal growth is completed according to the conventional VGF process.

[0048] The carrier concentration and mobility of the manufactured crystals were tested according to the test method specified in SJ / T11488-2015, and the test results are shown below. JPEG0007834386000014.jpg27164

[0049] Analysis of test results: The comparative example is a conventional method for producing gallium arsenide, using element Si as a dopant, and compared to Example 1, the same carrier concentration (1.2 × 10) 8 / cm 3 ) and the mobility of the gallium arsenide single crystal is 2020 cm². 2 / v·s is merely a matter of mobility 2480cm in Example 1. 2 The value is significantly lower than / v·s. Simultaneously, elemental content detection revealed that the B content in Example 1 was only 8 ppm, which is significantly lower than the B content of the gallium arsenide single crystal produced in the comparative example, and that the effective ratio of Si in Examples 1 and 3 is higher.

[0050] The difference between Example 1 and Example 3 is simply that Si x As y The difference lies in the timing of compound addition, and as can be seen from the detection data of Example 1 and Example 3, first Si x As y A method of synthesizing compounds and then mixing them with polycrystalline gallium arsenide to produce single crystals can more effectively improve the carrier concentration and mobility of the gallium arsenide single crystals.

[0051] This specific embodiment is merely a description of the present application and does not limit it. Those skilled in the art may, after reading this specification, make amendments to this embodiment as necessary, without making any creative contribution, but all such amendments will be protected under patent law as long as they are within the scope of the claims of this application.

Claims

1. A method for producing gallium arsenide single crystals, Before growing the gallium arsenide single crystal, use either method 1 or method 2 below to prepare the Si ｘ As ｙ The process includes distributing the compound in polycrystalline gallium arsenide. Method 1 is Si ｘ As ｙ The compound was synthesized simultaneously during the gallium arsenide polycrystalline synthesis stage, and then single crystals were grown. Method 2 involves first Si ｘ As ｙ Synthesize the compound, and further Si ｘ As ｙ The compound and the raw material, gallium arsenide polycrystalline material, are placed in a single crystal growth vessel, and single crystals are grown. If you select Method 2, the specific steps are as follows: S1, Si x As y compound synthesis (1) Filling: High-purity arsenic and high-purity silicon are placed in the first quartz boat and the second quartz boat in order in a weight ratio of (0.5 to 5):

1. (2) Baking of materials: The first quartz boat and the second quartz boat are baked in a vacuum environment, with the vacuum level set to 1 × 10⁻⁴ to 9 × 10⁻² Pa, and baked for 2 to 4 hours. (3) Synthesized Si x As y compound: Heat the first quartz boat to 650-700°C, heat the second quartz boat to 1050-1450°C, and maintain the temperature for 2-4 hours to synthesize the Si x As y compound. Then, lower the temperature of the second quartz boat using a temperature gradient, with a temperature gradient of 5-8°C / cm. S2, Single Crystal Growth The manufactured Si x As y compound, gallium arsenide polycrystalline material, and boron oxide are placed in a single crystal growth vessel and then placed in a furnace to grow crystals. A method for producing gallium arsenide single crystals, characterized by the following features.

2. If you select Method 1, the specific steps are as follows: (1) Filling: High-purity arsenic and high-purity gallium are placed in the first PBN boat and the second PBN boat in order in a weight ratio of (107-128):

100. The silicon to be doped was placed in the tail end of the second PBN boat equipped with gallium, and the weight ratio of silicon to gallium was set to (0.2-5):10000. (2) Baking of the material: Bake the first PBN boat and the second PBN boat in a vacuum environment, with the vacuum degree being 1×10 －４ to 9×10 －２ Pa, and bake for 2 to 4 hours. (3) Si ｘ As ｙ Synthesis of compound-containing gallium arsenide polycrystalline material: Heat the first PBN boat to 620-660°C, heat the second PBN boat to 1200-1400°C and maintain the temperature for 2-4 hours, then combine the gallium arsenide polycrystalline material with Si ｘ As ｙ The compound is synthesized, and the temperature of the second PBN boat decreases in a gradient from start to finish, with the temperature gradient controlled to be 2-4°C / cm. (4) Extraction of polycrystalline material: Si ｘ As ｙ We extracted the gallium arsenide polycrystalline material containing the compound. (5) Single crystal growth: Fabricated Si ｘ As ｙ The gallium arsenide polycrystalline material containing the compound and boron oxide are placed in a single crystal growth container and then placed in a furnace to grow the crystals. The method for producing a gallium arsenide single crystal according to feature 1.

3. The weight ratio of silicon to gallium to be doped in the aforementioned filling process is (1 to 1.2):10000. The method for producing a gallium arsenide single crystal according to feature 2.

4. In the filling process of step S1, the weight ratio of high-purity arsenic to high-purity silicon is set to (1 to 1.2):

1. The method for producing a gallium arsenide single crystal according to feature 1.

5. The Si of step S1 ｘ As ｙ In the compound synthesis process, the second quartz boat is heated to 1120-1150°C. The method for producing a gallium arsenide single crystal according to feature 1.

6. In step S2, Si ｘ As ｙ The weight ratio of the mixture of the compound, gallium arsenide polycrystalline, and boron oxide is (0.2-2):10000:(15-100). The method for producing a gallium arsenide single crystal according to feature 1.

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